d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
www.vishay.com
1
Operating Junction and Storage Temperature Range
Limit
40
± 20
163 (Silicon Limit)
60
a
(Package Limit)
60
a
33
b, c
27
b, c
100
60
a
4.3
b, c
50
125
125
80
5.2
b, c
3.3
b, c
- 55 to 150
260
Unit
V
A
mJ
W
SiE812DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain Top)
Maximum Junction-to-Case (Source)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
a, c
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
0.8
2.2
Maximum
24
1
2.7
Unit
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
a
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 25 A
V
GS
= 4.5
V, I
D
= 25 A
V
DS
= 20 V, I
D
= 25 A
Min.
40
Typ.
Max.
Unit
V
1.5
45.5
- 7.1
2.3
mV/°C
3
± 100
1
10
0.0026
0.0034
V
nA
µA
A
25
0.0022
0.0028
154
8300
800
360
111
52
25
15
1.15
50
265
50
10
20
15
60
10
Ω
S
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 25 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
pF
170
80
nC
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
1.7
75
400
75
15
30
25
90
15
60
100
1.2
75
100
Ω
ns
T
C
= 25 °C
0.8
50
65
27
23
I
SM
Pulse Diode Forward Current
V
SD
I
S
= 10 A
Body Diode Voltage
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
t
a
Reverse Recovery Fall Time
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
V
GS
= 10
V
thru 6
V
80
I
D
- Drain C
u
rrent (A)
5
V
4
V
I
D
- Drain C
u
rrent (A)
16
20
60
12
40
8
T
C
= 125 °C
4
25 °C
20
3
V
0
0.0
- 55 °C
0
0.5
0
1
2
3
4
0.1
0.2
0.3
0.4
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0030
10 000
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
0.0028
C - Capacitance (pF)
V
GS
= 4.5
V
0.0026
8000
6000
0.0024
4000
0.0022
V
GS
= 10
V
2000
C
oss
0.0020
0
20
40
60
80
100
0
0
C
rss
5
10
15
20
25
30
35
40
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
I
D
= 25 A
8
V
DS
= 20
V
6
V
DS
= 32
V
4
R
DS(on)
- On-Resistance
(
N
ormalized)
1.8
Capacitance
V
GS
= 10
V,
4.5
V
I
D
= 25 A
1.6
1.4
1.2
1.0
2
0.8
0
0
20
40
60
80
100
120
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
www.vishay.com
3
SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.0050
I
D
= 25 A
0.0045
I
S
- So
u
rce C
u
rrent (A)
0.0040
T
J
= 150 °C
10
0.0035
T
A
= 125 °C
0.0030
T
J
= 25 °C
0.0025
T
A
= 25 °C
0.0020
1
0.0
0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.8
2.6
2.4
V
GS(th)
(
V
)
2.2
2.0
1.8
1.6
10
1.4
1.2
- 50
0
0.01
I
D
= 250
µA
40
50
On-Resistance vs. Gate-to-Source Voltage
Po
w
er (
W
)
30
20
- 25
0
25
50
75
100
125
150
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
10 s
DC
BVDSS Limited
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
DS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74337
S09-1337-Rev. B, 13-Jul-09
SiE812DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
180
160
140
120
100
80
60
40
Package Limited
20
0
0
25
50
75
100
125
150
20
0
25
50
75
100
125
150
Po
w
er Dissipation (
W
)
I
D
- Drain C
u
rrent (A)
100
80
60
40
140
120
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
我最近在《华尔街日报》看到一篇题为“我们需要能维修自己的电子小玩意儿的权利(We need the right to repair our gadgets)”的文章(参考原文：)，作者对于众多电子产品看来是“有计画的废弃(planned obsolescence)”之现象非常愤怒，认为大众应该要求电子产品可以被维修。 但实际的情况是，举例来说，家家都有的电视机如果故障了，修理费用可能...[详细]
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