VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
Single Phase Bridge
(Power Modules), 25 A/35 A
FEATURES
• Universal, 3 way terminals:
push-on, wrap around or solder
• High thermal conductivity package, electrically
insulated case
• Center hole fixing
• Excellent power/volume ratio
• Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 °C to 275 °C
D-34
RoHS
COMPLIANT
• UL E300359 approved
• Designed and qualified for industrial and consumer level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
25 A to 35 A
1400 V to 1600 V
D-34
Single Phase Bridge
PRODUCT SUMMARY
I
O
V
RRM
Package
Circuit
DESCRIPTION
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O
I
FSM
I
2
t
V
RRM
T
J
CHARACTERISTICS
VALUES
26MB-A
25
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
70
400
420
790
725
1400 to 1600
- 55 to 150
VALUES
36MB-A
35
55
475
500
1130
1030
UNITS
A
°C
A
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
26MB..A
36MB..A
VOLTAGE
CODE
140
160
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1500
1700
I
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
2
Revision: 10-Jul-13
Document Number: 93564
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Resistive or inductive load
Maximum DC output current
at case temperature
I
O
Capacitive load
VALUES
26MB-A
25
20
65
t = 10 ms
Maximum peak, one cycle
non-repetitive forward current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level of threshold voltage
High level of threshold voltage
Low level forward slope resistance
High level forward slope resistance
Maximum forward voltage drop
Maximum DC reverse current per diode
RMS isolation voltage base plate
I
2
t
V
F(TO)1
V
F(TO)2
r
t1
r
t2
V
FM
I
RRM
V
ISOL
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
400
420
335
Initial
T
J
= T
J
maximum
350
790
725
560
512
5.6
0.70
0.75
7.0
6.4
t
p
= 400 μs
1.25
10
2700
VALUES
36MB-A
35
28
60
475
500
400
420
1130
1030
800
730
11.3
0.74
0.79
5.5
5.2
1.3
10
2700
V
µA
V
m
kA
2
s
A
2
s
A
UNITS
A
°C
I
2
t for time t
x
= I
2
t
x
t
x
;
0.1
t
x
10 ms, V
RRM
= 0 V
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
T
J
= 25 °C, I
FM
= 40 A
pk
(26MB)
T
J
= 25 °C, I
FM
= 55 A
pk
(36MB)
T
J
= 25 °C, at V
RRM
f = 50 Hz, t = 1 s
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage
temperature range
Maximum thermal resistance,
junction to case per bridge
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Mounting surface, smooth, flat and greased
Bridge to heatsink
TEST CONDITIONS
VALUES
26MB-A
VALUES
36MB-A
UNITS
°C
- 55 to 150
1.7
0.2
2.0
20
1.35
K/W
Nm
g
Revision: 10-Jul-13
Document Number: 93564
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
1000
Maximum Allowable Case temperature (°C)
150
130
110
90
70
50
0
5
10
15
20
25
30
Average Forward Current (A)
26MB..A Series
Instantaneous Forward Current (A)
Tj = 150°C
100
180°
(Rect)
180°
(Sine)
10
Tj = 25°C
26MB..A Series
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
50
26MB..A Series
Tj = 150°C
40
30
20
10
0
0
5
10
15
180°
(Sine)
2
K/
W
180°
(Rect)
3K
/
W
4K
/
W
5K
/
W
7 K/
W
10 K
/
W
A
hS
Rt
=
1
W
K/
ta
el
-D
R
20
25
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
400
350
300
250
200
150
At Any Rated Load Condition And
With
Rated
Vrrm
Applied Following Surge
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
450
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 150 °C
No Voltage Reapplied
350
Rated Vrrm Reapplied
250
150
26MB..A Series
26MB..A series
100
1
10
100
50
0.01
0.1
Pulse Train Duration (s)
1
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 10-Jul-13
Document Number: 93564
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
1000
Maximum Allowable Case temperature (°C)
150
36MB..A Series
130
110
90
70
50
0
5
10
15
20
25
30
35
40
Average Forward Current (A)
Instantaneous Forward Current (A)
Tj = 150°C
100
180°
(Rect)
180°
(Sine)
10
Tj = 25°C
36MB..A Series
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous Forward Voltage (V)
Fig. 6 - Current Ratings Characteristics
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Average Forward Power Loss (W)
80
36MB..A Series
Tj = 150°C
180°
(Sine)
180°
(Rect)
Rt
hS
A
60
=
1K
/
W
0.
7
K/
W
40
2K
/
W
-D
elt
a
R
3K
/
W
4 K/
W
20
5 K/
W
7 K/W
0
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - Total Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
450
400
350
300
250
200
150
100
1
At Any Rated Load Condition And
With
Rated
Vrrm
Applied Following Surge.
Initial Tj = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
Maximum
Non
Repetitive Surge Current
Versus
Pulse Train Duration.
450
Initial Tj = 150°C
No Voltage
Reapplied
400
Rated
Vrrm
Reapplied
350
300
250
200
150
36MB..A Series
36MB..A Series
10
100
100
0.01
0.1
Pulse Train Duration (s)
1
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 10-Jul-13
Fig. 10 - Maximum Non-Repetitive Surge Current
Document Number: 93564
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MB High Voltage Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
36
2
-
-
-
-
-
MB
3
160
4
A
5
Vishay Semiconductors product
Current rating code
Circuit configuration:
MB = Single phase european coding
Voltage code x 10 = V
RRM
Diode bridge rectifier:
A = 26 MB, 36 MB series
26 = 25 A (average)
36 = 35 A (average)
4
5
CIRCUIT CONFIGURATION
+
~
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95326
Revision: 10-Jul-13
Document Number: 93564
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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