PD -96907B
IRF6614
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
l
Application Specific MOSFETs
V
DSS
V
GS
R
DS(on)
R
DS(on)
Lead and Bromide Free
40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
Ultra Low Package Inductance
19nC
6.0nC 1.4nC 5.5nC 9.5nC
1.8V
Optimized for High Frequency Switching above 1MHz
Ideal for CPU Core and Telecom Synchronous
Rectification in DC-DC Converters
Optimized for Control FET socket of Sync. Buck Converter
Low Conduction Losses
Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
ST
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal
resistance by 80%.
The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-
tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous
buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical R DS (on) (mΩ)
Max.
40
±20
12.7
10.1
55
102
22
10.2
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
12
10
8
6
4
2
0
0
10
ID= 10.2A
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 12.7A
16
12
8
4
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
VDS = 32V
VDS= 20V
TJ = 125°C
TJ = 25°C
20
30
40
50
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.43mH, R
G
= 25Ω, I
AS
= 10.2A.
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1
5/3/06
IRF6614
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
71
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
38
5.9
7.1
1.80
-5.5
–––
–––
–––
–––
–––
19
5.9
1.4
6.0
5.7
7.4
9.5
1.0
Conditions
V
GS
= 0V, I
D
= 250µA
–––
–––
8.3
9.9
2.25
–––
1.0
150
100
-100
–––
29
–––
–––
–––
–––
–––
–––
1.5
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 12.7A
i
V
GS
= 4.5V, I
D
= 10.2A
i
V
mV/°C
µA
nA
S
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 10.2A
V
DS
= 20V
nC
V
GS
= 4.5V
I
D
= 10.2A
See Fig. 17
nC
Ω
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
i
I
D
= 10.2A
–––
–––
–––
–––
–––
–––
–––
13
27
18
3.6
2560
370
200
–––
–––
–––
–––
–––
–––
–––
pF
ns
Clamped Inductive Load
V
GS
= 0V
V
DS
= 20V
ƒ = 1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
g
–––
–––
–––
–––
15
5.5
1.0
23
8.3
V
ns
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
102
Min.
–––
Typ. Max. Units
–––
53
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10.2A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 10.2A
di/dt = 100A/µs
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6614
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
e
Power Dissipation
e
Power Dissipation
f
Power Dissipation
Operating Junction and
Parameter
Max.
2.1
1.4
42
270
-40 to + 150
Units
W
Peak Soldering Temperature
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
100
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Junction-to-Ambient
Linear Derating Factor
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
eÃ
W/°C
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
C
τ
τ
5
Ri (°C/W)
0.6676
1.0462
1.5611
29.282
25.455
τi
(sec)
0.000066
0.000896
0.004386
0.68618
32
τ
1
0.1
τ
2
τ
3
τ
4
τ
5
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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IRF6614
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
1
10
2.3V
0.1
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
2.3V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100.0
2.0
Fig 5.
Typical Output Characteristics
ID = 12.7A
ID, Drain-to-Source Current
(Α)
10.0
TJ = -40°C
Typical R DS(on) (Normalized)
TJ = 150°C
TJ = 25°C
VGS = 10V
1.5
1.0
1.0
VDS = 15V
0.1
1.5
2.0
2.5
3.0
≤
60µs PULSE WIDTH
3.5
4.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
4000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
30
TA= 25°C
25
(mΩ)
3000
Coss = Cds + Cgd
VGS = 3.0V
C, Capacitance (pF)
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 10V
DS(on)
Typical R
10
100
Ciss
2000
20
15
1000
10
Coss
Crss
0
1
5
0
20
40
ID, Drain Current (A)
60
80
VDS , Drain-to-Source Voltage (V)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
4
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IRF6614
100.0
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.01
0.10
1.00
10.00
100.00
ISD , Reverse Drain Current (A)
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
1msec
10msec
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
2.2
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
60
2.5
Fig11.
Maximum Safe Operating Area
50
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
40
ID = 250µA
1.5
30
20
1.0
10
0
25
50
75
100
125
150
0.5
-75
-50
-25
0
25
50
75
100
125
150
TJ , Junction Temperature (°C)
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
100
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
4.3A
6.4A
BOTTOM
10.2A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
ID
80
60
40
20
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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