MR750 SERIES
MR754 and MR760 are Preferred Devices
High Current Lead
Mounted Rectifiers
Features
•
•
•
•
Current Capacity Comparable to Chassis Mounted Rectifiers
Very High Surge Capacity
Insulated Case
Pb−Free Packages are Available*
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Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 2.5 grams (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal Lead
is Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•
Polarity: Cathode Polarity Band
HIGH CURRENT
LEAD MOUNTED
SILICON RECTIFIERS
50 − 1000 VOLTS
DIFFUSED JUNCTION
AXIAL LEAD
BUTTON
CASE 194
STYLE 1
MARKING DIAGRAM
MR7xx AYYWWG
G
MR7 = Device Code
xx
= 50, 51, 52, 54, 56 or 60
A
= Location Code
YY
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
1
March, 2007 − Rev. 6
Publication Order Number:
MR750/D
MR750 SERIES
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non−Repetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
RMS Reverse Voltage
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
(See Figures 5 and 6)
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions)
Operating and Storage Junction
Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
RSM
V
R(RMS)
I
O
MR750
50
MR751
100
MR752
200
MR754
400
MR756
600
MR760
1000
Unit
V
60
35
120
70
240
140
480
280
720
420
1200
700
V
V
A
22 (T
L
= 60°C, 1/8 in Lead Lengths)
6.0 (T
A
= 60°C, P.C. Board mounting)
I
FSM
T
J
, T
stg
400 (for 1 cycle)
*65
to +175
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Maximum Instantaneous Forward Voltage Drop (i
F
= 100 A, T
J
= 25°C)
Maximum Forward Voltage Drop (I
F
= 6.0 A, T
A
= 25°C, 3/8 in leads)
Maximum Reverse Current
(Rated DC Voltage)
T
J
= 25°C
T
J
= 100°C
Symbol
v
F
V
F
I
R
Max
1.25
0.90
25
1.0
Unit
V
V
mA
mA
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2
MR750 SERIES
IFSM , PEAK HALF WAVE CURRENT (AMP)
700
500
300
200
TYPICAL
iF, INSTANTANEOUS FORWARD CURRENT (AMP)
100
70
50
30
20
T
J
= 25°C
600
400
300
25°C
200
25°C
T
J
= 175°C
100
80
60
1.0
2.0
5.0
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
175°C
V
RRM
MAY BE APPLIED BETWEEN
EACH CYCLE OF SURGE. THE T
J
NOTED IS T
J
PRIOR TO SURGE
MAXIMUM
10
7.0
5.0
3.0
2.0
COEFFICIENT (mV/
°
C)
+0.5
Figure 2. Maximum Surge Capability
0
TYPICAL RANGE
−0.5
1.0
0.7
0.5
0.3
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
−1.0
−1.5
−2.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
i
F
, INSTANTANEOUS FORWARD CURRENT (AMP)
Figure 1. Forward Voltage
20
10
5.0
HEAT SINK
Figure 3. Forward Voltage Temperature Coefficient
R
θ
JL(t) , JUNCTION−TO−LEAD TRANSIENT
THERMAL RESISTANCE (
°
C/W)
L
L
1/2"
3/8"
1/4"
1/8"
Both leads to heat sink, with lengths as shown. Variations in R
qJL(t)
below 2.0 seconds are independent of lead connections of 1/8 inch
or greater, and vary only about
±20%
from the values shown. Val-
ues for times greater than 2.0 seconds may be obtained by drawing
a curve, with the end point (at 70 seconds) taken from Figure 8, or
calculated from the notes, using the given curves as a guide. Either
typical or maximum values may be used. For R
qJL(t)
values at pulse
widths less than 0.1 second, the above curve can be extrapolated
down to 10
ms
at a continuing slope.
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
t, TIME (SECONDS)
Figure 4. Typical Transient Thermal Resistance
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3
MR750 SERIES
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
28
L = 1/8"
24
20
16
12
8.0
4.0
0
0
20
40
60
80
100
120
140
160
180
200
1/4"
3/8"
RESISTIVE INDUCTIVE
LOADS
BOTH LEADS TO HEAT
SINK WITH LENGTHS
AS SHOWN
5/8"
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20
40
R
qJA
= 40°C/W
SEE NOTE
6F (I
PK
/I
AVE
= 6.28)
60
80
100
120
140
160
180
200
R
qJA
= 25°C/W
SEE NOTE
RESISTIVE INDUCTIVE LOADS
CAPACITANCE LOADS − 1F & 3F
I
(pk)
= 5 I
avg
I
(pk)
= 10 I
avg
I
(pk)
= 20 I
avg
f = 60 Hz
T
L
, LEAD TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5. Maximum Current Ratings
Figure 6. Maximum Current Ratings
NOTES
32
PF(AV), POWER DISSIPATION (WATTS)
28
24
20
16
12
8.0
4.0
0
0
4.0
8.0
12
16
20
24
28
32
RESISTIVE − INDUCTIVE LOADS
Use of the above model permits junction to lead thermal resistance for
any mounting configuration to be found. Lowest values occur when one
side of the rectifier is brought as close as possible to the heat sink as
shown below. Terms in the model signify:
T
A
= Ambient Temperature
T
C
= Case Temperature
T
L
= Lead Temperature
T
J
= Junction Temperature
R
qS
= Thermal Resistance, Heat Sink to Ambient
R
qL
= Thermal Resistance, Lead to Heat Sink
R
qJ
= Thermal Resistance, Junction to Case
P
F
= Power Dissipation
(Subscripts A and K refer to anode and cathode sides, respectively.)
Values for thermal resistance components are:
R
qL
= 40°C/W/in. Typically and 44°C/W/in Maximum.
R
qJ
= 2°C/W typically and 4°C/W Maximum.
Since R
qJ
is so low, measurements of the case temperature, T
C
, will be
approximately equal to junction temperature in practical lead mounted
applications. When used as a 60 Hz rectifierm the slow thermal response
holds T
J(PK)
close to T
J(AVG)
. Therefore maximum lead temperature may
be found from: T
L
= 175°−R
qJL
P
F
. P
F
may be found from Figure 7.
The recommended method of mounting to a P.C. board is shown on the
sketch, where R
qJA
is approximately 25°C/W for a 1−1/2" x 1−1/2" copper
surface area. Values of 40°C/W are typical for mounting to terminal strips
or P.C. boards where available surface area is small.
CAPACITANCE LOADS
I
(pk)
= 5 I
avg
10 I
avg
20 I
avg
6F
1F & 3F
R
qS(A)
T
A(A)
T
L(A)
T
C(A)
T
J
THERMAL CIRCUIT MODEL
(For Heat Conduction Through The Leads)
R
qL(A)
R
qJ(A)
R
qJ(K)
P
F
T
C(K)
T
L(K)
R
qL(K)
R
qS(K)
T
A(K)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Power Dissipation
40
R
θ
JL , THERMAL RESISTANCE,
JUNCTION−TO−LEAD(
°
C/W)
35
30
25
20
15
10
5.0
0
0
1/8
1/4
3/8
1/2
5/8
3/4
7/8
1.0
L, LEAD LENGTH (INCHES)
BOTH LEADS TO HEAT
SINK, EQUAL LENGTH
SINGLE LEAD TO HEAT SINK,
INSIGNIFICANT HEAT FLOW
THROUGH OTHER LEAD
Figure 8. Steady State Thermal Resistance
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Board Ground Plane
Recommended mounting for half wave circuit
MR750 SERIES
100
70
T
J
= 175°C
CURRENT INPUT WAVEFORM
30
T
J
= 25°C
t rr , REVERSE RECOVERY TIME (
m
s)
RELATIVE EFFICIENCY (%)
30
20
T
J
= 25°C
10
7.0
5.0
3.0
2.0
1.0
0.1
0
I
R
t
rr
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
I
F
= 5 A
3A
1A
I
F
50
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50
70 100
REPETITION FREQUENCY (kHz)
I
R
/I
F
, RATIO OF REVERSE TO FORWARD CURRENT
Figure 9. Rectification Efficiency
1000
700
500
C, CAPACITANCE (pF)
300
200
100
70
50
30
20
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
t fr , FORWARD RECOVERY TIME (
m
s)
T
J
= 25°C
0.7
Figure 10. Reverse Recovery Time
u
f
t
fr
u
fr
T
J
= 25°C
0.5
u
fr
= 1.0 V
0.3
0.2
u
fr
= 2.0 V
0.1
1.0
2.0
3.0
5.0
7.0
10
I
F
, FORWARD PULSE CURRENT (AMP)
Figure 11. Junction Capacitance
Figure 12. Forward Recovery Time
R
S
R
L
V
O
For a square wave input of amplitude V
m
, the efficiency
factor becomes:
V
2m
2
R
L
σ
(square)
+
V
2m
.100%
+
50%
R
L
(3)
Figure 13. Single−Phase Half−Wave
Rectifier Circuit
The rectification efficiency factor
σ
shown in Figure 9
was calculated using the formula:
V
2
o
(dc)
R
L
(1)
V
2
o
(dc)
.100%
σ
+
+
V
2
o
(rms)
.100%+
P
(rms)
V
2
o
(
ac)
)
V
2
o
(dc)
R
L
P
(dc)
For a sine wave input V
m
sin (wt) to the diode, assumed
lossless, the maximum theoretical efficiency factor becomes:
V
2m
p
2
R
L
σ
(sine)
+
V
2m
.100%
+
4 .100%
+
40.6%
π
2
4R
L
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
component across R
L
which is opposite in polarity to the
forward current, thereby reducing the value of the efficiency
factor
σ,
as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
of V
o
with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
(2)
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