NTLJS4159N
Power MOSFET
Features
30 V, 7.8 A,
mCoolt
Single N−Channel,
2x2 mm WDFN Package
•
WDFN Package Provides Exposed Drain Pad for Excellent Thermal
•
•
•
•
•
Conduction
2x2 mm Footprint Same as SC−88
Lowest R
DS(on)
in 2x2 mm Package
1.8 V R
DS(on)
Rating for Operation at Low Voltage Logic Level Gate
Drive
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
This is a Pb−Free Device
V
(BR)DSS
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R
DS(on)
MAX
35 mW @ 4.5 V
30 V
45 mW @ 2.5 V
55 mW @ 1.8 V
S
7.8 A
I
D
MAX
(Note 1)
Applications
•
DC−DC Conversion
•
Boost Circuits for LED Backlights
•
Optimized for Battery and Load Management Applications in
Portable Equipment such as, Cell Phones, PDA’s, Media Players, etc.
•
Low Side Load Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
, T
STG
I
S
T
L
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
T
A
= 25°C
3.3
3.6
2.6
0.70
28
−55 to
150
3.0
260
W
A
°C
G
A
°C
3
D
D
1
2
A
Symbol
V
DSS
V
GS
I
D
Value
30
±8.0
6.0
4.4
7.8
1.92
W
Unit
V
V
A
Pin 1
S
G
D
N−CHANNEL MOSFET
D
WDFN6
CASE 506AP
MARKING
DIAGRAM
1
6
2 JBMG 5
G
3
4
JB = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
6
5
4
D
D
S
D
S
(Top View)
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz Cu.
ORDERING INFORMATION
Device
NTLJS4159NT1G
Package
WDFN6
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTLJS4159N/D
©
Semiconductor Components Industries, LLC, 2006
1
September, 2006 − Rev. 4
NTLJS4159N
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t
≤
5 s (Note 3)
Junction−to−Ambient – Steady State Min Pad (Note 4)
Symbol
R
qJA
R
qJA
R
qJA
Max
65
38
180
°C/W
Unit
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm
2
, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
DS
= 24 V, V
GS
= 0 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Gate Threshold
Temperature Coefficient
Drain−to−Source On−Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 4.5, I
D
= 2.0 A
V
GS
= 2.5, I
D
= 2.0 A
V
GS
= 1.8, I
D
= 1.8 A
Forward Transconductance
g
FS
V
DS
= 16 V, I
D
= 2.0 A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 2.0 A, R
G
= 3.0
W
6.8
12.4
26
5.1
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 2.0 A
1045
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 15 V
115.5
45.3
12.1
1.2
1.9
2.7
3.65
W
13
nC
pF
V
GS
= V
DS
, I
D
= 250
mA
0.4
0.7
3.18
20.3
25.8
35.2
5.3
35
45
55
S
1.0
V
mV/°C
mW
I
GSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
Ref to 25°C
T
J
= 25°C
T
J
= 65°C
T
J
= 85°C
V
DS
= 0 V, V
GS
=
±8.0
V
30
20
1.0
1.0
5.0
±100
nA
V
mV/°C
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
ISD
/d
t
= 100 A/ms,
I
S
= 1.0 A
V
GS
= 0 V, IS = 2.0 A
T
J
= 25°C
T
J
= 125°C
0.71
0.58
15
9.0
6.0
7.0
nC
35
ns
1.2
V
5. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLJS4159N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
7
I
D
, DRAIN CURRENT (AMPS)
6
5
1.4 V
4
3
1.3 V
2
1
0
0 0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.2 V
V
GS
= 1.6 V to 8 V
1.5 V
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25°C
8
V
DS
≥
10 V
6
4
T
J
= 25°C
2
T
J
= 100°C
0
0
0.5
1
T
J
= −55°C
1.5
2
2.5
3
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.03
V
GS
= 4.5 V
0.025
T
J
= 100°C
0.05
T
J
= 25°C
0.04
V
GS
= 1.8 V
V
GS
= 2.5 V
0.02
T
J
= 25°C
0.03
0.015
T
J
= −55°C
0.02
V
GS
= 4.5 V
0.01
0
0.01
0.005
1.0
1.5
2.0
2.5
3.0
1
2
3
4
5
6
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
I
D
= 2 A
V
GS
= 4.5 V
1.4
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
10000
T
J
= 125°C
1.2
1.0
1000
T
J
= 85°C
0.8
0.6
−50
100
2
−25
0
25
50
75
100
125
150
4
6
8
10
12
14
16
18
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTLJS4159N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
3000
V
DS
= 0 V V
GS
= 0 V
5
QT
4
V
DS
V
GS
20
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
C, CAPACITANCE (pF)
2400
16
1800
C
iss
C
rss
600
0
5
V
GS
0
V
DS
5
10
15
20
25
30
C
oss
3
Q
GS
Q
GD
12
1200
2
8
1
0
0
I
D
= 3.0 A
T
J
= 25°C
4
8
12
Q
G
, TOTAL GATE CHARGE (nC)
4
0
16
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (AMPS)
V
DD
= 15 V
I
D
= 3.0 A
V
GS
= 4.5 V
t, TIME (ns)
100
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
4
V
GS
= 0 V
T
J
= 25°C
3
t
d(off)
t
f
t
r
t
d(on)
2
10
1
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.4
0.5
0.6
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.8
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
100
I D, DRAIN CURRENT (AMPS)
See Note 2 on Page 1
10
ms
10
100
ms
1 ms
1
SINGLE PULSE
T
C
= 25°C
T
J
= 150°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
10 ms
0.1
dc
0.01
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTLJS4159N
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
EFFECTIVE TRANSIENT THERMAL RESISTANCE
1000
100 D = 0.5
0.2
0.1
10 0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
P
(pk)
See Note 2 on Page 1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
qJA
(t)
10
100
1000
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.1
t, TIME (s)
1
Figure 12. Thermal Response
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