VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 30 A
Base
common
cathode
2
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-247AC
1
3
Anode
Anode
2
1
2
Common
cathode
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-247AC
2 x 30 A
45 V
0.55 V
150 mA at 125 °C
150 °C
Common cathode
27 mJ
DESCRIPTION
The VS-MBR6045WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
30 Apk, T
J
= 125 °C (per leg)
CHARACTERISTICS
Rectangular waveform
VALUES
60
45
2900
0.55
- 55 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBR6045WTPbF
45
VS-MBR6045WT-N3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
per device
I
F(AV)
50 % duty cycle at T
C
= 122 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
SYMBOL
TEST CONDITIONS
VALUES
30
60
A
2900
360
27
6
mJ
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 4 A, L = 3.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 30-Aug-11
Document Number: 94298
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
30 A
V
FM (1)
60 A
30 A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.62
0.75
0.55
1
150
0.27
7.3
1400
7.5
10 000
mA
V
m
pF
nH
V/µs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
1.0
0.5
0.24
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
Mounting torque
Marking device
MBR6045WT
Revision: 30-Aug-11
Document Number: 94298
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
T
J
= 150 °C
100
I
F
- Instantaneous
Forward Current (A)
T
J
= 125 °C
10
100
T
J
= 100 °C
1
0.1
0.01
0.001
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 30-Aug-11
Document Number: 94298
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com
Vishay Semiconductors
Allowable Case Temperature (°C)
150
30
140
DC
Average Power Loss (W)
25
20
15
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
130
RMS limit
120
Square
wave
(D = 0.50)
100 % rated
V
R
applied
110
DC
5
0
See note (1)
100
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and
with
rated
V
RRM
applied
following surge
1000
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
(Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 100 % rated V
R
Revision: 30-Aug-11
Document Number: 94298
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBR6045WTPbF, VS-MBR6045WT-N3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
1
2
3
4
5
6
7
-
-
-
-
-
2
60
3
45
4
WT
5
PbF
6
Vishay Semiconductors product
Schottky MBR series
Current rating (60 = 60 A)
Voltage rating (45 = 45 V)
Circuit configuration:
Center tap (dual) TO-247
Environmental digit
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBR6045WTPbF
VS-MBR6045WT-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AC PbF
TO-247AC -N3
www.vishay.com/doc?95223
www.vishay.com/doc?95226
www.vishay.com/doc?95007
Revision: 30-Aug-11
Document Number: 94298
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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