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FM24CL64B-DG

产品描述IMUs - Inertial Measurement Units Absolute Orientation 9-Axis Sensor
产品类别存储    存储   
文件大小388KB,共18页
制造商Cypress(赛普拉斯)
标准
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FM24CL64B-DG概述

IMUs - Inertial Measurement Units Absolute Orientation 9-Axis Sensor

FM24CL64B-DG规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Cypress(赛普拉斯)
零件包装代码DFN
包装说明HVSON, SOLCC8,.16,37
针数8
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys DescriptionF-RAM,8KB,I2C,1MHz,3V,DFN8
JESD-30 代码R-PDSO-N8
JESD-609代码e3
长度4.5 mm
内存密度65536 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
湿度敏感等级3
功能数量1
端子数量8
字数8192 words
字数代码8000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织8KX8
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC8,.16,37
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)260
电源3/3.3 V
认证状态Not Qualified
座面最大高度0.85 mm
最大待机电流0.000006 A
最大压摆率0.0003 mA
最大供电电压 (Vsup)3.65 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin (Sn)
端子形式NO LEAD
端子节距0.95 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
宽度4 mm
Base Number Matches1

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FM24CL64B
64-Kbit (8K × 8) Serial (I
2
C) F-RAM
64-Kbit (8K × 8) Serial (I
2
C) F-RAM
Features
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24CL64B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The
FM24CL64B is capable of supporting 10
14
read/write cycles, or
100 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an industrial temperature
range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
(typ) active current at 100 kHz
3
A
(typ) standby current
Voltage operation: V
DD
= 2.7 V to 3.65 V
Industrial temperature: –40
C
to +85
C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (DFN) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
13
8Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A0
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84458 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 20, 2017
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