NVTFS4824N
Power MOSFET
30 V, 4.7 mW, 46 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS4824NWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
7.5 mW @ 4.5 V
N−Channel
R
DS(on)
MAX
4.7 mW @ 10 V
46 A
I
D
MAX
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3,
& 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
"20
46
33
21
11
18.2
12.8
3.2
1.6
402
−55 to
175
21
72
A
°C
A
mJ
XXXX
A
Y
WW
G
W
A
1
Unit
V
V
A
G (4)
D (5 − 8)
W
S (1, 2, 3)
MARKING DIAGRAM
1
WDFN8
(m8FL)
CASE 511AB
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 38 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top) − Steady
State (Notes 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.2
47
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 3
Publication Order Number:
NVTFS4824N/D
NVTFS4824N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 30 V
T
J
= 25°C
T
J
= 125°C
30
1.0
10
"100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 23 A
V
GS
= 4.5 V, I
D
= 23 A
1.5
3.5
5.7
56
2.5
4.7
7.5
V
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
V
DS
= 1.5 V, I
D
= 20 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 15 V, I
D
= 23 A
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 23 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
1740
360
200
14
1.6
5.3
5.5
29
pF
nC
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
12
27
20
6
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 23 A
T
J
= 25°C
T
J
= 125°C
0.81
0.69
19
V
GS
= 0 V,
dI
S
/dt = 100 A/ms,
I
S
= 23 A
9.1
9.6
8.8
nC
ns
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS4824N
TYPICAL CHARACTERISTICS
125
I
D
, DRAIN CURRENT (A)
10 V
100
5V
4.5 V
I
D
, DRAIN CURRENT (A)
125
V
DS
≥
10 V
100
75
4.0 V
3.6 V
75
50
V
GS
= 3.2 V
50
T
J
= 100°C
25
T
J
= 25°C
T
J
= −55°C
2
3
4
5
6
25
0
0
1
2
3
T
J
= 25°C
4
5
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
I
D
= 23 A
T
J
= 25°C
0.015
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
Figure 2. Transfer Characteristics
T
J
= 25°C
0.006
V
GS
= 4.5 V
0.010
0.004
0.005
V
GS
= 10 V
0.000
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0.002
10
20
30
40
50
60
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
175
I
D
= 23 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
1000
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS4824N
TYPICAL CHARACTERISTICS
10
Q
T
8
C, CAPACITANCE (pF)
2000
C
iss
1500
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2500
6
1000
4
Q
gs
Q
gd
500
C
rss
0
10
20
C
oss
2
I
D
= 23 A
T
J
= 25°C
0
0
10
20
30
Q
g
, TOTAL GATE CHARGE (nC)
0
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
60
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 15 V
I
D
= 23 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
r
10
t
f
t
d(on)
V
GS
= 0 V
T
J
= 25°C
40
t
d(off)
20
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.40
0.50
0.60
0.70
0.80
0.90
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
75
Figure 10. Diode Forward Voltage vs. Current
I
D
= 38 A
I
D
, DRAIN CURRENT (A)
100
1 ms
10
ms
V
GS
= 4.5 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
ms
10 ms
dc
50
10
1
25
0.1
0.01
0.1
0
25
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE(°C)
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NVTFS4824N
TYPICAL CHARACTERISTICS
10
Duty Cycle = 0.5
R
YJ_mb−top
R(t) (°C/W)
0.2
1
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
PULSE TIME (sec)
0.01
0.1
1
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVTFS4824NTAG
NVTFS4824NWFTAG
NVTFS4824NTWG
NVTFS4824NWFTWG
Marking
4824
24WF
4824
24WF
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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