MAC15SD, MAC15SM,
MAC15SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
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•
Sensitive Gate allows Triggering by Microcontrollers and other
•
•
•
•
•
•
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Logic Circuits
High Immunity to dv/dt − 25 V/ms minimum at 110°C
High Commutating di/dt − 8.0 A/ms minimum at 110°C
Maximum Values of I
GT
, V
GT
and I
H
Specified for Ease of Design
On-State Current Rating of 15 Amperes RMS at 70°C
High Surge Current Capability − 120 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO−220AB Package
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
Pb−Free Packages are Available*
1
Value
Unit
V
400
600
800
I
T(RMS)
I
TSM
15
120
A
2
3
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
G
MT1
MARKING
DIAGRAM
MAC15SxG
AYWW
TO−220AB
CASE 221A−09
STYLE 4
x
A
Y
WW
G
= D, M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 110°C, Sine Wave, 50 to
60 Hz, Gate Open)
MAC15SD
MAC15SM
MAC15SN
On−State RMS Current
(Full Cycle Sine Wave, 60Hz, T
J
= 70°C)
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
J
= 110°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 70°C)
Average Gate Power (t = 8.3 ms, T
C
= 70°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
PIN ASSIGNMENT
A
1
2
I
2
t
P
GM
P
G(AV)
T
J
T
stg
60
20
0.5
−40 to +110
−40 to +150
A
2
s
W
W
°C
°C
3
4
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
ORDERING INFORMATION
Device
MAC15SD
MAC15SDG
MAC15SM
MAC15SMG
MAC15SN
MAC15SNG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 5
Publication Order Number:
MAC15S/D
MAC15SD, MAC15SM, MAC15SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2) (I
TM
=
"21A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Hold Current (V
D
= 12 V, Gate Open, Initiating Current =
"150mA)
Latching Current (V
D
= 24V, I
G
= 5mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (V
D
= 12 V, R
L
= 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 400V, I
TM
= 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, T
J
= 110°C, f= 500Hz, Snubber: C
S
= 0.01
mF,
R
S
=15W, see Figure 15)
Critical Rate of Rise of Off-State Voltage
(V
D
= Rate V
DRM
, Exponential Waveform, R
GK
= 510W, T
J
= 110°C)
2. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(di/dt)c
8.0
10
−
A/ms
V
TM
I
GT
−
−
−
I
H
I
L
−
−
−
V
GT
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
5.0
10
5.0
15
20
15
V
−
2.0
3.0
3.0
3.0
5.0
5.0
5.0
10
mA
mA
−
−
1.8
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
dv/dt
25
75
−
V/ms
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2
MAC15SD, MAC15SM, MAC15SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2 −
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant IV
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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MAC15SD, MAC15SM, MAC15SN
T C , MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)
110
P(AV), AVERAGE POWER DISSIPATION (WATTS)
25
DC
a
100
a
= 30 and 60°
90
a
a
20
a
180°
120°
90°
60°
a
= CONDUCTION ANGLE
15
80
10
a
= 30°
5
a
= CONDUCTION ANGLE
70
120°
180°
60
0
2
6
8
10
12
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
4
14
DC
16
0
0
2
4
6
8
10
12
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
14
16
Figure 1. RMS Current Derating
R(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
I T, INSTANTANOUS ON-STATE CURRENT (AMPS)
Figure 2. Maximum On−State Power Dissipation
100
1
Typical @ T
J
= 25
°C
10
Maximum @
T
J
= 25
°C
Z
qJC(t)
= R
qJC(t)
r(t)
0.1
1
Maximum @
T
J
= 110°C
0.1
0.5
1
1.5
2
2.5
3
3.5
4
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
4.5
0.01
0.1
1
10
100
t, TIME (ms)
1000
1@
4
10
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
7
I L , LATCHING CURRENT (mA)
6
5
MT2 NEGATIVE
4
3
MT2 POSITIVE
2
1
−40
9
8
7
Q1
6
5
Q3
4
3
−25
−10
5
20
35
50
65
80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
2
−40
−25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
95
110
I H , HOLDING CURRENT (mA)
Figure 5. Typical Holding Current Versus
Junction Temperature
Figure 6. Typical Latching Current Versus
Junction Temperature
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4
MAC15SD, MAC15SM, MAC15SN
7
6
5
4
3
Q2
2
1
0
−40
Q1
Q3
V GT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
0.9
0.8
0.7
Q3
0.6
0.5
0.4
0.3
−40
Q1
Q2
−25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
95
110
−25
−10
5
20
35
50
65
T
J
, JUNCTION TEMPERATURE (°C)
80
95
110
Figure 7. Typical Gate Trigger Current
Versus Junction Temperature
Figure 8. Typical Gate Trigger Voltage
Versus Junction Temperature
140
V
PK
= 400V
120
STATIC dv/dt (V/mS)
600V
100
800V
80
T
J
= 110°C
110
100
STATIC dv/dt (V/mS)
90
80
70
120°C
60
R
G
− MT1 = 510W
110°C
T
J
= 100°C
60
100
200
300
400
500
600
700
800
RGK, GATE−MT1 RESISTANCE (OHMS)
900
1000
50
400
450
500
550
600
650
V
PK
, Peak Voltage (Volts)
700
750
800
Figure 9. Typical Exponential Static dv/dt
Versus Gate−MT1 Resistance, MT2(+)
Figure 10. Typical Exponential Static dv/dt
Versus Peak Voltage, MT2(+)
110
100
STATIC dv/dt (V/mS)
STATIC dv/dt (V/mS)
90
80
600V
70
60
R
G
− MT1 = 510W
50
40
100
105
110
115
T
J
, Junction Temperature (°C)
120
125
800V
V
PK
= 400V
180
160
140
120
110°C
100
80
120°C
60
40
20
400
R
G
− MT1 = 510W
T
J
= 100°C
450
500
550
600
650
V
PK
, Peak Voltage (Volts)
700
750
800
Figure 11. Typical Exponential Static dv/dt
Versus Junction Temperature, MT2(+)
Figure 12. Typical Exponential Static dv/dt
Versus Peak Voltage, MT2(*)
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