PD-96956 Rev
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
Description
IRAMX20UP60A
Series
20A, 600V
with open Emitter Pins
International Rectifier's IRAMX20UP60A is a 20A, 600V Integrated Power Hybrid IC for Appliance Motor
Drives applications such air conditioning systems and compressor drivers as well as in light industrial applica-
tion. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated
package to simplify design.
This advanced HIC is a combination of IR's low V
CE(on)
Punch-Through IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package.
A built-in temperature monitor and input logic protection function, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Using a Single in line package (SiP2) with heatspreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
• Integrated Gate Drivers
• Temperature Monitor
• Overcurrent shutdown
• Fully Isolated Package
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range ~ kW / 85~253 Vac
• Isolation 2000V
RMS
min
•
Features
Absolute Maximum Ratings
Parameter
V
CES
/ V
RRM
V
+
Description
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
RMS Phase Current (Note 1)
RMS Phase Current (Note 1)
Pulsed RMS Phase Current (Note 2)
PWM Carrier Frequency
Power dissipation per IGBT @ T
C
=25°C
Isolation Voltage (1min)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
+
Max. Value
600
450
20
10
35
20
38
2000
-40 to +150
-40 to +150
0.5 to 0.6
Units
V
I
O
@ T
C
=25°C
I
O
@ T
C
=100°C
I
O
F
PWM
P
d
V
ISO
T
J
(IGBT & Diodes)
T
J
(Driver IC)
T
A
kHz
W
V
RMS
°C
Nm
Note 1: Sinusoidal Modulation at V =400V, T
J
=150°C, F
PWM
=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: t
P
<100ms; T
C
=25°C; F
PWM
=16kHz.
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1
IRAMX20UP60A
Internal Electrical Schematic - IRAMX20UP60A
V+ (10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
23 VS1
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
Rg2
LO1 16
R
3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN1 (18)
LIN2 (19)
LIN3 (20)
T/I
TRIP
(21)
R
T
VDD (22)
VSS (23)
THERMISTOR
24 HO1
25 VB1
1 VCC
2 HIN1
3 HIN2
4 HIN3
5 LIN1
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7
8
9
10
11
12 13
LO2 15
Rg4
Driver IC
Rg6
LO3 14
R
1
R
2
C
2
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IRAMX20UP60A
Absolute Maximum Ratings (Continued)
All voltages are absolute referenced to COM.
Symbol
I
BDF
P
BR Peak
V
S1,2,3
V
B1,2,3
V
CC
Parameter
Bootstrap Diode Peak Forward
Current
Bootstrap Resistor Peak Power
(Single Pulse)
High Side floating supply offset
voltage
High Side floating supply voltage
Low Side and logic fixed supply
voltage
Input voltage LIN, HIN, T/I
Trip
Min
---
---
V
B1,2,3
- 25
-0.3
-0.3
Max
4.5
25.0
V
B1,2,3
+0.3
600
20
Lower of
(V
SS
+15V) or
V
CC
+0.3V
Units Conditions
A
W
V
V
V
t
P
= 10ms,
T
J
= 150°C, T
C
=100°C
t
P
=100μs, T
C
=100°C
ESR / ERJ series
V
IN
-0.3
V
Inverter Section Electrical Characteristics @T
J
= 25°C
Symbol
V
(BR)CES
V
(BR)CES
/ T
V
CE(ON)
Parameter
Collector-to-Emitter Breakdown
Voltage
Temperature Coeff. Of
Breakdown Voltage
Collector-to-Emitter Saturation
Voltage
Zero Gate Voltage Collector
Current
Diode Forward Voltage Drop
Bootstrap Diode Forward Voltage
Drop
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
Min
600
---
---
---
---
---
---
---
--
---
---
---
Typ
---
0.3
1.75
2.10
5
165
1.90
1.50
--
---
22
---
Max
---
---
2.15
2.60
80
---
2.60
2.20
1.25
1.10
---
±5
%
Units Conditions
V
V/°C
V
V
IN
=5V, I
C
=250μA
V
IN
=5V, I
C
=1.0mA
(25°C - 150°C)
I
C
=10A, V
CC
=15V
I
C
=10A, V
CC
=15V, T
J
=150°C
V
IN
=5V, V
+
=600V
V
IN
=5V, V
+
=600V, T
J
=150°C
I
C
=10A
I
C
=10A, T
J
=150°C
I
F
=1A
I
F
=1A, T
J
=125°C
I
CES
μA
V
FM
V
V
BDFM
R
BR
R
BR
/R
BR
V
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3
IRAMX20UP60A
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol
E
ON
E
OFF
E
TOT
E
REC
t
RR
E
ON
E
OFF
E
TOT
E
REC
t
RR
Q
G
RBSOA
Parameter
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
Reverse Bias Safe Operating Area
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
390
150
540
35
100
620
305
925
65
130
56
FULL SQUARE
Max
490
200
690
70
---
780
400
1180
135
---
84
ns
nC
μJ
ns
μJ
Units Conditions
I
C
=10A, V
+
=400V
V
CC
=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=10A, V
+
=400V
V
CC
=15V, L=2mH, T
J
=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=15A, V
+
=400V, V
GE
=15V
T
J
=150°C, I
C
=10A, V
P
=600V
V
+
= 450V
V
CC
=+15V to 0V
T
J
=150°C, V
P
=600V,
SCSOA
Short Circuit Safe Operating Area
10
---
---
μs
V
+
= 360V,
V
CC
=+15V to 0V
V
+
= 360V, V
GE
=15V
V
CC
=+15V to 0V
See CT2
See CT3
T
J
=150°C, V
P
=600V, t
SC
<10μs
I
CSC
Short Circuit Collector Current
---
140
---
A
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol
V
B1,2,3
V
S1,2,3
V
CC
V
T/ITRIP
V
IN
Definition
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
T/I
TRIP
input voltage
Logic input voltage LIN, HIN
Min
V
S
+12
Note 4
12
V
SS
V
SS
Max
V
S
+20
450
20
V
SS
+5
V
SS
+5
Units
V
V
V
Note 3: For more details, see IR21365 data sheet
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
4
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IRAMX20UP60A
Static Electrical Characteristics Driver Function
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM and are applicable
to all six channels. (Note 3)
Symbol
V
IH
V
IL
V
CCUV+,
V
BSUV+
V
CCUV-,
V
BSUV-
V
CCUVH,
V
BSUVH
V
IN, Clamp
I
QBS
I
QCC
I
LK
I
IN+
I
IN-
T/I
TRIP+
T/I
TRIP-
V(T/I
TRIP
)
V(T/I
TRIP
,HYS)
Definition
Logic "0" input voltage
Logic "1" input voltage
V
CC
and V
BS
supply undervoltage Positive going threshold
V
CC
and V
BS
supply undervoltage Negative going threshold
V
CC
and V
BS
supply undervoltage lock-out hysteresis
Input Clamp Voltage (HIN, LIN, T/I
TRIP
) I
IN
=10μA
Quiescent V
BS
supply current V
IN
=0V
Quiescent V
CC
supply current V
IN
=0V
Offset Supply Leakage Current
Input bias current V
IN
=5V
Input bias current V
IN
=0V
T/I
TRIP
bias current V
ITRIP
=5V
T/I
TRIP
bias current V
ITRIP
=0V
T/I
TRIP
threshold Voltage
T/I
TRIP
Input Hysteresis
Min
3.0
---
10.6
10.4
---
4.9
---
---
---
---
---
---
---
3.85
---
Typ
---
---
11.1
10.9
0.2
5.2
---
---
---
200
100
30
0
4.30
0.07
Max
---
0.8
11.6
11.4
---
5.5
165
3.35
60
300
220
100
1
4.75
---
Units
V
V
V
V
V
V
μA
mA
μA
μA
μA
μA
μA
V
V
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.
Symbol
T
ON
T
OFF
T
FLIN
T
BLT-Trip
D
T
M
T
T
T/ITrip
T
FLT-CLR
Parameter
Input to Output propagation turn-
on delay time (see fig.11)
Input to Output propagation turn-
off delay time (see fig. 11)
Input Filter time (HIN, LIN)
I
TRIP
Blancking Time
Dead Time (V
BS
=V
DD
=15V)
Matching Propagation Delay Time
(On & Off)
T/I
Trip
to six switch to turn-off
propagation delay (see fig. 2)
Post T/I
Trip
to six switch to turn-
off clear time (see fig. 2)
Min
---
---
100
100
220
---
---
---
---
Typ
600
700
200
150
290
40
---
7.7
6.7
360
75
1.75
---
---
Max
---
---
---
Units Conditions
ns
V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
ns
ns
ns
ns
ns
μs
ms
V
IN
=0 & V
IN
=5V
V
IN
=0 & V
IN
=5V
V
BS
=V
CC
=15V
V
CC
= V
BS
= 15V, external dead
time> 400ns
V
CC
=V
BS
= 15V, I
C
=10A, V
+
=400V
T
C
= 25°C
T
C
= 100°C
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