VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 60 A
FEATURES
• Glass passivated pellet chip junction
• 150 °C max. operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Available
2
3
1
TO-247AC modified
Base cathode
2
1
TO-247AC
Base cathode
2
2
3
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
1
Cathode
3
Anode
1
Anode
3
Anode
VS-60EPF...
VS-60APF0...
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-247AC modified (2 pins), TO-247AC
60 A
200 V, 400 V, 600 V
1.3 V
830 A
70 ns
150 °C
Single die
0.5
DESCRIPTION
The VS-60EPF0... and VS-60APF0... soft recovery rectifier
series has been optimized for combined short reverse
recovery time and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
30 A, T
J
= 25 °C
Sinusoidal waveform
CHARACTERISTICS
VALUES
200 to 600
60
830
70
1.1
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-60EPF02PbF, VS-60APF02PbF,
VS-60EPF02-M3, VS-60APF02-M3
VS-60EPF04PbF, VS-60APF04PbF,
VS-60EPF04-M3, VS-60APF04-M3
VS-60EPF06PbF, VS-60APF06PbF,
VS-60EPF06-M3, VS-60APF06-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
10
I
RRM
AT 150 °C
mA
Revision: 11-Feb-16
Document Number: 93710
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
60
700
830
2450
3460
34 600
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
60 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.3
5.0
0.88
0.1
10
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 60 A
pk
25 A/μs
25 °C
Typical
VALUES
180
3.4
0.5
0.5
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.4
40
0.2
6
0.21
6 (5)
12 (10)
60EPF02
Case style TO-247AC modified
Marking device
Case style TO-247AC
60EPF04
60EPF06
60APF02
60APF04
60APF06
g
oz.
kgf · cm
(Ibf · in)
°C/W
UNITS
°C
Mounting torque
Revision: 11-Feb-16
Document Number: 93710
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
140
150
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
30°
90
0
10
20
30
60.PF.. Series
R
thJC
(DC) = 0.4 K/W
120
100
80
Ø
180°
120°
90°
60°
30°
RMS limit
Conduction angle
DC
60
40
20
0
Ø
Conduction period
60.PF.. Series
T
J
= 150 °C
0
20
40
60
80
100
60°
90°
40
120°
180°
60
70
50
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
800
60.PF.. Series
R
thJC
(DC) = 0.4 K/W
700
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 175 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum Allowable Case
Temperature (°C)
140
130
120
110
60°
100
90
0
20
40
30°
Peak Half Sine Wave
Forward Current (A)
Ø
600
500
400
300
Conduction period
90°
120°
180°
60
DC
60.PF.. Series
200
100
1
10
100
80
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
90
900
180°
120°
90°
60°
30°
800
Maximum non-repetitive surge current
versus pulse train duration.
Initial T
J
= 195 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
80
70
60
50
40
30
20
10
0
0
10
Peak Half Sine Wave
Forward Current (A)
700
600
500
400
300
200
100
0.01
60.PF.. Series
RMS limit
Ø
Conduction angle
60.PF.. Series
T
J
= 150 °C
20
30
40
50
60
70
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93710
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
1000
Vishay Semiconductors
Instantaneous Forward Current (A)
100
T
J
= 25 °C
T
J
= 150 °C
10
60.PF.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
I
FM
= 60 A
4
60.PF.. Series
T
J
= 25 °C
3
I
FM
= 60 A
I
FM
= 30 A
0.15
I
FM
= 10 A
0.10
I
FM
= 5 A
60.PF.. Series
T
J
= 25 °C
0.05
0
40
80
120
160
200
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
2
I
FM
= 30 A
1
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
I
FM
= 1 A
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
0.45
0.40
5
60.PF.. Series
T
J
= 150 °C
I
FM
= 60 A
I
FM
= 30 A
3
I
FM
= 10 A
2
I
FM
= 5 A
1
I
FM
= 1 A
0
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
0.35
0.30
0.25
0.20
0.15
0.10
60.PF.. Series
T
J
= 150 °C
I
FM
= 60 A
I
FM
= 30 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
4
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 93710
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60.PF0.PbF Series, VS-60.PF0.-M3 Series
www.vishay.com
25
60.PF.. Series
T
J
= 25 °C
I
FM
= 60 A
25
60.PF.. Series
T
J
= 150 °C
Vishay Semiconductors
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
20
20
I
FM
= 60 A
I
FM
= 30 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
15
I
FM
= 30 A
I
FM
= 10 A
15
10
I
FM
= 5 A
I
FM
= 1 A
10
5
5
0
0
40
80
120
160
200
0
10
20
30
40
50
60
70
80
90
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
1
Steady state value
(DC operation)
0.1
Single pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
60.PF.. Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 93710
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
