NTF3055L175
Power MOSFET
2.0 A, 60 V, Logic Level
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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2.0 AMPERES, 60 VOLTS
R
DS(on)
= 175 mW
N−Channel
D
•
This is a Pb−Free Device
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
Gate−to−Source Voltage
Continuous
Non−repetitive (t
p
≤
10 ms)
Drain Current
Continuous @ T
A
= 25°C
Continuous @ T
A
= 100°C
Single Pulse (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 3.6 A, L = 10 mH, V
DS
= 60 Vdc)
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
Value
60
60
±
15
±
20
2.0
1.2
6.0
2.1
1.3
0.014
−55
to 175
65
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
°C
mJ
1
A
= Assembly Location
Y
= Year
W
= Work Week
5L175 = Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
2
4
SOT−223
CASE 318E
STYLE 3
3
MARKING DIAGRAM
I
DM
P
D
I
D
I
D
AYW
5L175
G
G
T
J
, T
stg
E
AS
R
qJA
R
qJA
T
L
72.3
114
260
°C/W
PIN ASSIGNMENT
4
Drain
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 0.995 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 in
2
).
1
2
3
Gate
Drain
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 4
1
Publication Order Number:
NTF3055L175/D
NTF3055L175
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 1.0 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 5.0 Vdc, I
D
= 2.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.0 Adc, T
J
= 150°C)
Forward Transconductance (Note 3)
(V
DS
= 8.0 Vdc, I
D
= 1.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 2.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
T
J
= 150°C) (Note 3)
V
SD
−
−
−
−
−
−
0.84
0.68
28.3
15.6
12.7
0.027
1.0
−
−
−
−
−
mC
Vdc
(V
DD
= 30 Vdc, I
D
= 2.0 Adc,
V
GS
= 5.0 Vdc, R
G
= 9.1
W)
(Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
10.2
21
14.3
15.3
5.1
1.4
2.5
20
40
30
30
10
−
−
nC
ns
(V
DS
= 25 Vdc, V
GS
= 0 V, f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
194
70
29
270
100
40
pF
V
GS(th)
1.0
−
−
−
−
1.7
4.2
155
0.32
0.57
3.2
2.0
−
175
0.42
−
−
Vdc
mV/°C
mW
Vdc
V
(BR)DSS
60
−
−
−
−
72.8
74.4
−
−
−
−
−
1.0
10
±
100
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
V
DS(on)
g
fs
Mhos
Reverse Recovery Time
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
t
rr
t
a
t
b
Q
RR
ns
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2
NTF3055L175
TYPICAL ELECTRICAL CHARACTERISTICS
3.2
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
0.4
0.8
1.2
1.6
2.0
V
GS
= 2.5 V
2.4
2.8
V
GS
= 5 V
V
GS
= 3.5 V
V
GS
= 4 V
V
GS
= 3 V
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1
T
J
= 25°C
1.4
1.8
2.2
2.6
T
J
=
−55°C
3
3.4
3.8
4.2
T
J
= 100°C
V
DS
≥
10 V
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0
0.5
1
1.5
2
2.5
3
3.5
4
T
J
= 25°C
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0
Figure 2. Transfer Characteristics
V
GS
= 5 V
T
J
= 100°C
V
GS
= 10 V
T
J
= 25°C
T
J
=
−55°C
0.5
I
D,
DRAIN CURRENT (AMPS)
1
1.5
2
2.5
3
I
D,
DRAIN CURRENT (AMPS)
3.5
4
Figure 3. On−Resistance versus
Gate−to−Source Voltage
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
1
0
1000
I
D
= 1 A
V
GS
= 5 V
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
T
J
= 100°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTF3055L175
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
700
600
C, CAPACITANCE (pF)
500
400
300
200
100
0
10
V
DS
= 0 V
C
iss
V
GS
= 0 V
7
6
5
4
3
2
1
0
0
1
2
3
4
Q
1
Q
T
Q
2
T
J
= 25°C
V
GS
C
rss
C
iss
C
oss
C
rss
5 V
GS
0 V
DS
5
10
15
20
25
I
D
= 2 A
T
J
= 25°C
5
6
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
V
DS
= 30 V
I
D
= 2 A
V
GS
= 5 V
2
I
S
, SOURCE CURRENT (AMPS)
1.6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
t
r
10
t
d(on)
t
f
1.2
0.8
0.4
t
d(off)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.6
0.64
0.68
0.72
0.76
0.8
0.84
0.88
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
10
I
D
, DRAIN CURRENT (AMPS)
100
ms
1
10 ms
1 ms
0.1
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
dc
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage versus Current
I
D
= 6 A
0.01
0.001
0.1
1000
25
50
75
100
125
150
175
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF3055L175
TYPICAL ELECTRICAL CHARACTERISTICS
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
100
D = 0.5
0.2
0.1
0.05
0.02
10
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTF3055L175T1G
Package
SOT−223 (TO−261)
(Pb−Free)
Shipping
†
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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