44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V
GS(TH)
< 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb−Free and Halogen Free Devices
Applications
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V
(BR)DSS
R
DS(on)
TYP
1.5
W
@ 4.5 V
20 V
2.4
W
@ 2.5 V
5.1
W
@ 1.8 V
6.8
W
@ 1.65 V
Top View
3
285 mA
I
D
Max
Interfacing, Switching
High Speed Switching
Cellular Phones, PDAs
MAXIMUM RATINGS
(T
J
= 25C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
T
A
= 25C
Steady
State
T
A
= 85C
T
A
= 25C
P
D
I
DM
T
J
, T
STG
I
S
T
L
I
D
T
A
= 25C
T
A
= 85C
T
A
= 25C
T
A
= 25C
P
D
545
mA
mW
mA
C
mA
C
SOT−723
CASE 631AA
STYLE 5
KA
M
210
155
310
400
−55
to
150
286
260
I
D
Symbol
V
DSS
V
GS
Value
20
10
255
185
285
440
mW
mA
Unit
V
V
1
2
1
−
Gate
2
−
Source
3
−
Drain
MARKING
DIAGRAM
KA
1
t
p
= 10
ms
= Device Code
= Date Code
Operating Junction and Storage Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
ORDERING INFORMATION
Device
NTK3043NT1G
NTK3043NT5G
Package
SOT−723*
SOT−723*
Shipping
†
4000 / Tape & Reel
8000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb−Free.
Semiconductor Components Industries, LLC, 2013
January, 2013
−
Rev. 4
1
Publication Order Number:
NTK3043N/D
M
NTK3043N
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
Symbol
R
qJA
R
qJA
R
qJA
Max
280
228
400
C/W
Unit
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 100
mA
I
D
= 100
mA,
Reference to 25C
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25C
T
J
= 125C
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(ON)
0.4
−2.4
1.5
1.6
2.4
5.1
6.8
g
FS
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 10 V
C
OSS
C
RSS
t
d(ON)
V
GS
= 4.5 V, V
DD
= 5 V, I
D
= 10 mA,
R
G
= 6
W
t
r
t
d(OFF)
t
f
T
J
= 25C
T
J
= 125C
t
RR
V
GS
= 0 V, V
DD
= 20 V, dISD/dt = 100 A/ms,
I
S
= 286 mA
t
a
t
b
Q
RR
V
SD
0.275
3.4
3.8
4.5
10
15
S
W
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
20
27
1
10
1
V
mV/C
mA
mA
Test Condition
Symbol
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
5
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 4.5V, I
D
= 10 mA
V
GS
= 4.5V, I
D
= 255 mA
V
GS
= 2.5 V, I
D
= 1 mA
V
GS
= 1.8 V, I
D
= 1 mA
V
GS
= 1.65 V, I
D
= 1 mA
1.3
V
mV/C
Forward Transconductance
V
DS
= 5 V, I
D
= 100 mA
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS, VGS= 4.5 V
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V, I
S
= 286 mA
0.83
0.69
9.1
7.1
2.0
3.7
nC
ns
1.2
V
13
15
94
55
ns
11
8.3
2.7
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTK3043N
TYPICAL PERFORMANCE CURVES
0.3
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 3 V to 10 V
0.2
I
D,
DRAIN CURRENT (AMPS)
2.5 V
T
J
= 25C
2.2 V
0.3
V
DS
5 V
0.2
2.0 V
0.1
1.8 V
1.6 V
1.4 V
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.1
T
J
= 25C
0
1
T
J
= 125C
0
T
J
=
−55C
1.5
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.5
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
5
4
6
Figure 2. Transfer Characteristics
I
D
= 0.255 A
T
J
= 25C
T
J
= 25C
5
4
V
GS
= 2.5 V
3
2
1
3
2
1
0
V
GS
= 4.5 V
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
9.0
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
−50
−25
0
25
50
V
GS
= 4.5 V, I
D
= 10 mA
75
100
125
150
1
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 1.65 V, I
D
= 1 mA
I
DSS
, LEAKAGE (nA)
V
GS
= 1.8 V, I
D
= 10 mA
100
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150C
10
T
J
= 125C
5
10
15
20
T
J
, JUNCTION TEMPERATURE (C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTK3043N
TYPICAL PERFORMANCE CURVES
25
C
iss
C, CAPACITANCE (pF)
20
15
10
5
0
10
V
DS
= 0 V
5
V
GS
0
V
DS
V
GS
= 0 V
5
10
15
C
rss
20
C
iss
C
oss
C
rss
T
J
= 25C
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
V
DD
= 5 V
I
D
= 10 mA
V
GS
= 4.5 V
t, TIME (ns)
100
t
d(off)
t
f
t
r
t
d(on)
10
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.4
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25C
0.3
0.2
0.1
T
J
= 150C
T
J
= 125C
0
0.4
T
J
=
−55C
1.0
0.5
0.7
0.6
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
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4
NTK3043N
PACKAGE DIMENSIONS
SOT−723
CASE 631AA
ISSUE D
−X−
b1
D
3
A
−Y−
E
H
E
b
0.08 X Y
C
SIDE VIEW
1
2X
2
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
b
b1
C
D
E
e
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
e
TOP VIEW
3X
1
L
3X
L2
BOTTOM VIEW
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
0.40
2X
PACKAGE
OUTLINE
2X
0.27
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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