Freescale Semiconductor
Technical Data
Document Number: MRF8S18260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA and multicarrier base station applications with
frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulation formats.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 30 Volts, I
DQ
=
1600 mA, P
out
= 74 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
1805 MHz
1840 MHz
1880 MHz
G
ps
(dB)
17.9
17.9
17.9
η
D
(%)
31.6
31.9
32.5
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--35.0
--36.0
--36.0
MRF8S18260HR6
MRF8S18260HSR6
1805-
-1880 MHz, 74 W AVG., 30 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 374 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 1 dB Compression Point
≃
260 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
Designed for Digital Predistortion Error Correction Systems
•
Optimized for Doherty Applications
•
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
420
3.5
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
CASE 375I-
-04
NI-
-1230-
-8
MRF8S18260HR6
CASE 375J-
-03
NI-
-1230S-
-8
MRF8S18260HSR6
N.C. 1
RF
in
/V
GS
2
RF
in
/V
GS
3
N.C. 4
(Top View)
8 VBW
7 RF
out
/V
DS
6 RF
out
/V
DS
5 VBW
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 74 W CW, 30 Vdc, I
DQ
= 1600 mA, 1805 MHz
Case Temperature 88°C, 260 W CW
(4)
, 30 Vdc, I
DQ
= 1600 mA, 1805 MHz
Symbol
R
θJC
Value
(2,3)
0.27
0.26
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
©
Freescale Semiconductor, Inc., 2010, 2012. All rights reserved.
MRF8S18260HR6 MRF8S18260HSR6
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 400
μAdc)
Gate Quiescent Voltage
(V
DS
= 30 Vdc, I
D
= 1600 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 1600 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 4 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.1
—
4.3
0.1
1.9
2.6
5.1
0.15
2.6
—
5.8
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1600 mA, P
out
= 74 W Avg., f = 1805 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.8
29.0
5.4
—
—
17.9
31.6
6.0
--35.0
--19
19.0
—
—
--32.0
--7
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1600 mA, P
out
= 74 W Avg., Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth
@
±5
MHz Offset.
Frequency
1805 MHz
1840 MHz
1880 MHz
1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally.
2. Part internally matched both on input and output.
(continued)
G
ps
(dB)
17.9
17.9
17.9
η
D
(%)
31.6
31.9
32.5
Output PAR
(dB)
6.0
6.0
5.9
ACPR
(dBc)
--35.0
--36.0
--36.0
IRL
(dB)
--19
--18
--8
MRF8S18260HR6 MRF8S18260HSR6
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 100 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 75 MHz Bandwidth @ P
out
= 74 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
260
21
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 1600 mA, 1805--1880 MHz Bandwidth
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
64
0.4
0.011
0.01
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
3
C11
C24
C9
C7
C20
R4
R2
C3
C5
CUT OUT AREA
C1
R1
C2
C26
C18
C16
C15
C14
C17
C19
C27
C21 C23
C10
C8
C25
MRF8S18260H/HS
Rev. 2
C22
R6
C13
C6
C4
R5
R7
R3
C12
Figure 2. MRF8S18260HR6(HSR6) Test Circuit Component Layout
Table 5. MRF8S18260HR6(HSR6) Test Circuit Component Designations and Values
Part
C1
C2, C7, C8, C14, C20, C21
C3, C4, C5, C6 C16, C17,
C18, C19
C9, C10, C22, C23
C11, C12
C13
C15
C24, C25
C26, C27
R1
R2, R3
R4, R5, R6, R7
PCB
Description
2.2 pF Chip Capacitor
15 pF Chip Capacitors
1.0 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
47
μF,
35 V Electrolytic Capacitors
0.6 pF Chip Capacitor
0.4 pF Chip Capacitor
470
μF,
63 V Electrolytic Capacitors
6.8
μF
Chip Capacitors
2 kΩ, 1/4 W Chip Resistor
4.75
Ω,
1/4 W Chip Resistors
1 kΩ, 1/4 W Chip Resistors
0.020″,
ε
r
= 3.5
Part Number
ATC600F2R2BT250XT
ATC600F150JT250XT
ATC600F1R0BT250XT
GRM55DR61H106KA88L
476KXM050M
ATC600F0R6BT250XT
ATC600F0R4BT250XT
MCGPR63V477M13X26--RH
C4532X7RIH685K
CRCW12062k00FKEA
CRCW12064R75FKEA
CRCW12061K00FKEA
RO4350B
Manufacturer
ATC
ATC
ATC
Murata
Illinois Capacitor
ATC
ATC
Multicomp
TDK
Vishay
Vishay
Vishay
Rogers
MRF8S18260HR6 MRF8S18260HSR6
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
V
DD
= 30 Vdc, P
out
= 74 W (Avg.), I
DQ
= 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
η
D
0.01% Probability on CCDF
G
ps
PARC
IRL
ACPR
1780
1800
1820
1840
1860
1880
1900
f, FREQUENCY (MHz)
η
D
, DRAIN
EFFICIENCY (%)
18.8
18.6
18.4
G
ps
, POWER GAIN (dB)
18.2
18
17.8
17.6
17.4
17.2
17
16.8
1760
35
34
33
32
31
--33
--34
ACPR (dBc)
--35
--36
--37
--38
1920
--0
--5
--10
--15
--20
--25
IRL, INPUT RETURN LOSS (dB)
--1.2
--1.4
--1.6
--1.8
--2
--2.2
PARC (dB)
Figure 3. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 74 Watts Avg.
--10
--20
--30
--40
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 30 Vdc, P
out
= 100 W (PEP), I
DQ
= 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
Figure 4. Intermodulation Distortion Products
versus Two-
-Tone Spacing
18.6
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
18.4
G
ps
, POWER GAIN (dB)
18.2
18
17.8
17.6
17.4
1
0
--1
--2
--3
--4
--5
PARC
--1 dB = 60 W
--2 dB = 85 W
η
D
V
DD
= 30 Vdc, I
DQ
= 1600 mA, f = 1840 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
30
50
70
90
110
G
ps
ACPR
40
--3 dB = 115 W
30
20
10
0
60
50
--20
--25
--30
--35
--40
--45
--50
ACPR (dBc)
130
P
out
, OUTPUT POWER (WATTS)
Figure 5. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S18260HR6 MRF8S18260HSR6
RF Device Data
Freescale Semiconductor, Inc.
5
η
D
,
DRAIN EFFICIENCY (%)
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