IRFZ24, SiHFZ24
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
25
5.8
11
Single
D
FEATURES
60
0.10
• Dynamic dV/dt rating
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
D
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
IRFZ24PbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
60
± 20
17
12
68
0.40
100
60
4.5
-55 to +175
300
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 403 μH, R
g
= 25
,
I
AS
= 17 A (see fig. 12).
c. I
SD
17 A, dI/dt
140 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
S16-0013-Rev. C, 18-Jan-16
Document Number: 91406
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24, SiHFZ24
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
2.5
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
a
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C
V
GS
= 10 V
I
D
= 10 A
b
V
DS
= 25 V, I
D
= 10 A
MIN.
60
-
2.0
-
-
-
-
5.5
-
-
-
-
TYP.
-
0.061
-
-
-
-
-
-
640
360
79
-
-
-
13
58
25
42
4.5
7.5
MAX.
-
-
4.0
± 100
25
250
0.10
-
-
-
-
25
5.8
11
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
pF
V
GS
= 10 V
I
D
= 17 A, V
DS
= 48 V,
see fig. 6 and 13
b
-
-
-
-
-
-
nC
V
DD
= 30 V, I
D
= 17 A,
R
g
= 18
,
R
D
= 1.7
,
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
ns
D
-
G
nH
-
S
-
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
-
-
-
-
-
-
-
-
88
0.29
17
A
68
1.5
180
0.64
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/s
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-0013-Rev. C, 18-Jan-16
Document Number: 91406
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24, SiHFZ24
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 3 - Typical Transfer Characteristics
S16-0013-Rev. C, 18-Jan-16
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91406
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24, SiHFZ24
www.vishay.com
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
Fig. 8 - Maximum Safe Operating Area
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0013-Rev. C, 18-Jan-16
Document Number: 91406
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFZ24, SiHFZ24
www.vishay.com
Vishay Siliconix
L
V
DS
t
p
V
DD
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T.
A
I
AS
+
-
V
DD
V
DS
10 V
t
p
0.01
Ω
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
12 V
10 V
Q
GS
Q
G
0.2 µF
0.3 µF
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test
S16-0013-Rev. C, 18-Jan-16
Document Number: 91406
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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