VS-SD603C..C Series
www.vishay.com
Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 600 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
600 A
B-43
Single diode
B-43
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
High power FAST recovery diode series
1.0 μs to 2.0 μs recovery time
High voltage ratings up to 2200 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Case style conform to JEDEC
®
B-43
Maximum junction temperature 125 °C
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
t
rr
T
J
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
J
TEST CONDITIONS
VALUES
600
55
942
25
8320
8715
346
316
400 to 2200
1.0 to 2.0
25
- 40 to 125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD603C..S10C
08
10
12
VS-SD603C..S15C
14
16
VS-SD603C..S20C
20
22
V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2300
45
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Document Number: 93178
Revision: 14-Jan-14
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD603C..C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
600 (300)
55 (75)
942
8320
8715
7000
7330
346
316
245
224
3460
1.36
1.81
0.87
0.67
2.97
kA
2
s
V
mW
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS current
Maximum peak, one-cycle
non-repetitive forward current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1885 A, T
J
= 25 °C; t
p
= 10 ms sinusoidal wave
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
1.0
1.5
2.0
1000
25
- 30
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
TYPICAL VALUES
AT T
J
= 125 °C
t
rr
AT 25 % I
RRM
(μs)
2.0
3.2
3.5
Q
rr
(μC)
45
87
97
I
rr
(A)
34
51
55
I
FM
t
rr
t
Q
rr
I
RM(REC)
S10
S15
S20
dir
dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
- 40 to 125
- 40 to 150
0.076
0.038
9800 (1000)
83
B-43
UNITS
°C
K/W
N (kg)
g
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.006
0.008
0.010
0.015
0.026
DOUBLE SIDE
0.007
0.008
0.010
0.015
0.025
RECTANGULAR CONDUCTION
SINGLE SIDE
0.005
0.008
0.011
0.016
0.026
DOUBLE SIDE
0.005
0.008
0.011
0.015
0.025
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Document Number: 93178
Revision: 14-Jan-14
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD603C..C Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heatsink T
emperature (°C)
130
120
110
100
90
80
70
60
50
DC
40
0
200
400
600
800
1000
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Period
Maximum Allowable Heatsink T
emperat ure (°C)
130
120
110
100
90
80
S
D603C..C S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.076 K/ W
S
D603C..C S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.038 K/ W
Conduction Angle
30°
70
0
50
100
150
60°
90°
120°
250
180°
200
300
350
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
Maximum Average F
orward Power Loss (W)
130
120
110
100
90
80
70
60
0
100
200
300
30°
60°
90°
120°
180°
DC
400
500
S
D603C..C S
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.076 K/ W
1800
1600
1400
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
Average Forward Current (A)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
S
D603C..C S
eries
T = 125°C
J
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Maximum Allowable Heatsink T
emperature (°C)
120
110
100
S
D603C..C S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.038 K/ W
Maximum Average Forward Power Loss (W)
130
2500
DC
180°
120°
90°
60°
30°
2000
1500
Conduction Angle
90
80
70
60
50
0
100 200
300
400
500
600
700
Average Forward Current (A)
30°
60° 90°
1000
RMS Limit
Conduc tion Period
500
120°
180°
S
D603C..C S
eries
T = 125°C
J
0
0
200
400
600
800
1000
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Document Number: 93178
Revision: 14-Jan-14
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD603C..C Series
www.vishay.com
Vishay Semiconductors
10000
Instantaneous Forward Current (A)
Peak Half S Wave F
ine
orward Current (A)
8000
At Any Rated Load Condition and With
7500
R
ated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
7000
@60 Hz 0.0083 s
6500
@50 Hz 0.0100 s
6000
5500
5000
4500
4000
3500
3000
2500
1
10
100
Number of Equa l Amplitude Ha lf Cyc le Current Pulses (N)
1000
T = 25 °C
J
100
T = 125 °C
J
S
D603C..C S
eries
S
D603C..C S
eries
10
.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
Instantaneous Forward Voltage (V)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Peak Half S Wave F
ine
orward Current (A)
9000
8000
7000
6000
5000
4000
3000
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 125 °C
J
No Voltage Reapplied
R
ated V
RRM
Reapplied
T
ransient T
hermal Impedance Z
thJ-hs
(K/ W)
0.1
S
D603C..C S
eries
0.01
S
tead y S
tate Va lue :
R
thJ-hs
= 0.076 K/ W
(S
ingle S Cooled)
ide
R
thJ-hs
= 0.038 K/ W
(Double S Cooled)
ide
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
S
D603C..C S
eries
2000
0.01
0.1
Pulse T
rain Duration (s)
1
S
quare Wave Pulse Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
100
V
FP
80
F
orward R overy (V)
ec
I
T
J
= 125°C
60
40
T
J
= 25°C
20
S
D603C..S
20C S
eries
0
0
200
400
600
800
1000
1200
1400
1600
1800
2000
R
ate Off R Of F
ise
orward Current di/ d t (A/ usec)
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93178
Revision: 14-Jan-14
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD603C..C Series
www.vishay.com
Vishay Semiconductors
Maximum R
everse R
ecovery Time - T (µs)
rr
4
S
D603C..S
15C S
eries
T = 125 °C; V r = 30V
J
3.5
I
FM
= 1000 A
S
quare Pulse
Maximum Revers Recovery T
e
ime - Trr (µs)
2.2
2.1
2
1.9
1.8
1.7
1.6
10
S
D603C..S
10C S
eries
T = 125 °C; V r = 30V
J
I
FM
= 1000 A
S
quare Pulse
500 A
3
500 A
2.5
250 A
250 A
100
2
10
100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/d t (A/ µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Rec overy Charge - Qrr (µC)
130
120
110
100
90
80
70
60
50
40
30
S
D603C..S
10C S
eries
T = 125 °C; V r = 30V
J
250 A
500 A
I
FM
= 1000 A
S
quare Pulse
200
180
160
140
500 A
I
FM
= 1000 A
S
quare Pulse
120
100
80
60
S
D603C..S
15C S
eries
T = 125 °C; V r = 30V
J
250 A
20
10 20 30 40 50 60 70 80 90 100
40
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Recovery Charge Characteristics
Maximum R
everse R overy Current - Irr (A)
ec
Maximum Reverse Recovery Current - Irr (A)
120
110
100
90
80
70
60
50
40
30
20
S
D603C..S
10C S
eries
T = 125 °C; V r = 30V
J
I
FM
= 1000 A
S
quare Pulse
500 A
250 A
140
130
120
110
100
90
80
70
60
50
40
30
S
D603C..S
15C S
eries
T = 125 °C; V r = 30V
J
250 A
500 A
I
FM
= 1000 A
Square Pulse
10
10 20 30 40 50 60 70 80 90 100
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Recovery Current Characteristics
Document Number: 93178
Revision: 14-Jan-14
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
