1N4148UB
Switching Diode
Qualified per MIL-PRF-19500/116
DESCRIPTION
This 1N4148UB switching/signal diode features ceramic bodied construction for military grade
products per MIL-PRF-19500/116.
This
small low capacitance diode, with very fast switching
speeds, is featured in a surface mount UB package with various polarities available.
Microsemi also offers a variety of other switching/signal diodes.
Compliant
Qualified Levels:
JAN, JANTX, and
JANTXV
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
Surface mount equivalent of popular JEDEC registered 1N4148 number.
Very low capacitance.
Very fast switching speeds with minimal reverse recovery times.
Unidirectional as well as doubler, common anode and common cathode polarities are available.
JAN, JANTX, and JANTXV qualification is available per MIL-PRF-19500/116.
(See
part nomenclature
for all available options.)
RoHS compliant by design.
UB Package
Also available in:
UBC package
(Ceramic Lid surface mount)
1N4148UBC
APPLICATIONS / BENEFITS
•
•
•
•
•
•
High frequency data lines.
Low-profile ceramic surface mount package (see package illustration).
RS-232 & RS–422 interface networks.
Ethernet 10 Base T.
LAN.
Computers.
UB2 package
(2-Pin surface mount)
1N4148UB2
DO-35 package
(axial-leaded)
1N4148-1
DO-213AA package
(MELF surface mount)
1N4148UR-1
MAXIMUM RATINGS
@ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Ambient
(1)
Thermal Resistance Junction-to-Solder Pad
Maximum Breakdown Voltage
Working Peak Reverse Voltage
(2)
Average Rectified Current @ T
A
= 75 ºC
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
NOTES:
1. See
Figure 2
for thermal impedance curves.
2. See
Figure 1
for derating.
Symbol
T
J
& T
STG
R
ӨJA
R
ӨJSP
V
(
BR)
V
RWM
I
O
I
FSM
Value
-65 to +200
325
120
100
75
200
2
Unit
o
C
o
C/W
o
C/W
V
V
mA
A (pk)
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0281-2, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 1 of 5
1N4148UB
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Ceramic.
TERMINALS: Gold plating over nickel under plate.
MARKING: Part number, date code, manufacturer’s ID.
TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
WEIGHT: < 0.04 Grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see
Electrical Characteristics
table)
1N4148
UB
CA
Polarity
CA = Common Anode
CC = Common Cathode
D = Doubler
Blank = Unidirectional
Surface Mount package
Common Anode
Unidirectional
Doubler
Common Cathode
Symbol
I
R
I
O
t
rr
V
F
V
R
V
RWM
SYMBOLS & DEFINITIONS
Definition
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
Reverse Voltage: The reverse voltage dc value, no alternating component.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
T4-LDS-0281-2, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 2 of 5
1N4148UB
ELECTRICAL CHARACTERISTICS
@ 25 ºC unless otherwise noted
FORWARD FORWARD REVERSE FORWARD
VOLTAGE VOLTAGE RECOVERY RECOVERY
V
F2
@
TIME
V
F1
@
TIME
t
rr
t
fr
I
F
=10mA
I
F
=100mA
(Note 1)
(Note 2)
V
V
ns
ns
REVERSE
CURRENT
I
R1
@ 20 V
REVERSE
CURRENT
I
R2
@ 75 V
µA
REVERSE
CURRENT
I
R3
@ 20 V
T
A
=150
o
C
µA
REVERSE
CURRENT
I
R4
@ 75 V
T
A
=150
o
C
µA
CAPACI-
TANCE
C
(Note 3)
pF
CAPACI-
TANCE
C
(Note 4)
pF
nA
0.8
1.2
5
20
25
0.5
35
75
4.0
2.8
NOTE 1:
I
F
= I
R
= 10 mA, R
L
= 100 Ohms + 5 %.
NOTE 2:
I
F
= 50 mA.
NOTE 3:
V
R
= 0 V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
NOTE 4:
V
R
= 1.5V, f = 1 MHz, V
SIG
= 50 mV (pk to pk).
T4-LDS-0281-2, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 3 of 5
1N4148UB
GRAPHS
DC Operation Maximum Io Rating (mA)
T
A
(ºC) (Ambient)
FIGURE 1 –
Temperature – Current Derating
Theta (°C/W)
Time (s)
FIGURE 2
– Thermal Impedance
T4-LDS-0281-2, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 4 of 5
1N4148UB
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL1
LL2
Min
.046
.115
.085
.022
.017
Dimensions
inch
millimeters
Max
Min
Max
.056
1.17
1.42
.128
2.92
3.25
.108
2.16
2.74
.128
3.25
.108
2.74
.038
0.56
0.97
.035
0.43
0.89
Note
Symbol
LS1
LS2
LW
r
r1
r2
Dimensions
inch
millimeters
Min
Max
Min
Max
.035
.039
0.89
0.99
.071
.079
1.80
2.01
.016
.024
0.41
0.61
.008
0.20
.012
0.31
.022
.056
Note
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
T4-LDS-0281-2, Rev. 1 (121568)
©2012 Microsemi Corporation
Page 5 of 5
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