PD - 95349C
IRF7494PbF
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
V
DSS
150V
R
DS(on)
max
44m
Ω
@V
GS
= 10V
I
D
5.1A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Max.
150
± 20
5.1
4.0
40
2.5
0.02
33
-55 to + 150
Units
V
c
A
W
W/°C
V/ns
°C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
i
Typ.
Max.
20
50
Units
°C/W
e
–––
–––
Notes
through
are on page 8
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1
10/15/09
IRF7494PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
150
–––
–––
2.5
–––
–––
–––
–––
–––
0.13
35
–––
–––
–––
–––
–––
–––
–––
44
4.0
10
250
100
-100
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 3.1A
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 120V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
f
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
35
6.4
13
9
10
29
14
1783
222
104
886
121
189
–––
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
ns
S
nC
Conditions
V
DS
= 50V, I
D
= 5.1A
I
D
= 3.1A
V
DS
= 75V
V
GS
= 10V
V
DD
= 75V
I
D
= 3.1A
R
G
= 6.8Ω
V
GS
= 10V
V
GS
= 0V
f
f
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
g
Avalanche Characteristics
E
AS
I
AR
Ã
d
Max.
262
3.1
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
45
93
2.3
A
40
1.3
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 3.1A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.1A, V
DD
= 25V
di/dt = 100A/µs
f
f
2
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IRF7494PbF
100
TOP
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
100
TOP
VGS
15.0V
10.0V
8.00V
5.50V
5.00V
4.75V
4.50V
4.25V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
4.25V
1
0.1
4.25V
≤60µs
PULSE WIDTH Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
0.1
≤60µs
PULSE WIDTH Tj = 150°C
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
ID, Drain-to-Source Current (A)
VDS = 50V
≤60µs
PULSE WIDTH
10
T J = 150°C
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
(Normalized)
100
2.5
ID = 5.1A
2.0
VGS = 10V
1.5
1
1.0
0.1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7494PbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 3.1A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
100µsec
1
T J = 25°C
1msec
1
T A = 25°C
10msec
VGS = 0V
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, Source-to-Drain Voltage (V)
Tj = 150°C
Single Pulse
0.1
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7494PbF
6
V
DS
R
D
5
ID, Drain Current (A)
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
4
3
2
-
V
DD
Fig 10a.
Switching Time Test Circuit
1
0
25
50
75
100
125
150
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
T A , Ambient Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response ( Z thJA ) °C/W
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1
10
100
0.0001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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