VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
2
3
1
• Designed and qualified
JEDEC
®
-JESD47
according
to
TO-247AC modified
Base
common
cathode
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
2
DESCRIPTION
1
Cathode
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC modified (2 pins)
30 A
1200 V
2.3 V
47 ns
150 °C
Single die
VS-HFA30PB120... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200 V and 30 A
continuous current, the VS-HFA30PB120... is especially well
suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
1200
30
120
90
350
140
-55 to +150
W
°C
A
UNITS
V
Revision: 14-Jul-15
Document Number: 94069
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
MIN.
1200
-
See fig. 1
-
-
See fig. 2
See fig. 3
-
-
-
-
TYP.
-
2.4
3.1
2.3
1.3
1100
50
8.0
MAX.
-
4.1
5.7
4.0
40
4000
75
-
μA
pF
nH
V
UNITS
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
Maximum forward voltage
V
FM
I
F
= 60 A
I
F
= 30 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
47
110
170
10
16
650
1540
270
240
MAX.
-
170
260
15
24
980
2310
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.50
5.61
0.198
-
MAX.
300
0.36
80
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
HFA30PB120
Revision: 14-Jul-15
Document Number: 94069
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
I
F
- Instantaneous Forward Current (A)
100
100
Vishay Semiconductors
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
1
0.1
0.01
0.001
0.0001
150 °C
125 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
1
2
3
4
5
6
7
8
25 °C
0
200
400
600
800
1000
1200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
10
1
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
Z
thJC
- Thermal Response
0.1
τ
J
R
1
τ
1
Ci =
τi/Ri
R
2
τ
2
R
3
τ
3
τ
C
0.01
Single pulse
(thermal response)
0.001
0.000001
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
τi
(s)
Ri (°C/W)
0.234
0.000100
0.069
0.000434
0.056
0.002202
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 14-Jul-15
Document Number: 94069
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
300
275
250
225
200
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
3000
2500
2000
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
Vishay Semiconductors
t
rr
(ns)
175
150
125
100
75
50
25
0
100
150
200
250
300
350
400
450
500
Q
rr
(nC)
1500
1000
500
0
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
200
300
400
500
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
(Per Leg)
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
(Per Leg)
35
30
900
800
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
700
V
rr
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 15 A
dI
(rec)M
/dt (A/µs)
25
600
500
400
300
200
100
I
RRM
(A)
20
15
10
5
0
100
I
F
= 30 A
I
F
= 60 A
V
rr
= 200 V
T
J
= 125 °C
T
J
= 25 °C
150
200
250
300
350
400
450
500
0
100
150
200
250
300
350
400
450
500
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt (Per Leg)
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt(Per Leg)
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
Revision: 14-Jul-15
Document Number: 94069
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
HF
2
-
-
-
-
-
-
-
A
3
30
4
PB
5
120 PbF
6
7
1
2
3
4
5
6
7
Vishay Semiconductors product
HEXFRED
®
family
Electron irradiated
Current rating (30 = 30 A)
PB = TO-247AC modified
Voltage rating: (120 = 1200 V)
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-HFA30PB120PbF
VS-HFA30PB120-N3
QUANTITY PER T/R
25
25
MINIMUM ORDER QUANTITY
500
500
PACKAGING DESCRIPTION
Antistatic plastic tube
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC modified PbF
TO-247AC modified -N3
www.vishay.com/doc?95541
www.vishay.com/doc?95255
www.vishay.com/doc?95442
www.vishay.com/doc?95358
Revision: 14-Jul-15
Document Number: 94069
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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