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CY7C1381D-100AXCT

产品描述SRAM 18Mb 100Mhz 512Kx36 Flow-Thru SRAM
产品类别存储   
文件大小655KB,共37页
制造商Cypress(赛普拉斯)
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CY7C1381D-100AXCT概述

SRAM 18Mb 100Mhz 512Kx36 Flow-Thru SRAM

CY7C1381D-100AXCT规格参数

参数名称属性值
产品种类
Product Category
SRAM
制造商
Manufacturer
Cypress(赛普拉斯)
RoHSDetails
Memory Size18 Mbit
Organization512 k x 36
Access Time8.5 ns
Maximum Clock Frequency100 MHz
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
3.6 V
电源电压-最小
Supply Voltage - Min
3.135 V
Supply Current - Max175 mA
最小工作温度
Minimum Operating Temperature
0 C
最大工作温度
Maximum Operating Temperature
+ 70 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
TQFP-100
系列
Packaging
Reel
系列
Packaging
MouseReel
系列
Packaging
Cut Tape
数据速率
Data Rate
SDR
Memory TypeSDR
Moisture SensitiveYes
Number of Ports4
工厂包装数量
Factory Pack Quantity
750
类型
Type
Synchronous
单位重量
Unit Weight
0.023175 oz

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CY7C1381D
CY7C1383D
CY7C1383F
18-Mbit (512K × 36/1M × 18)
Flow-Through SRAM
18-Mbit (512K × 36/1M × 18) Flow-Through SRAM
Features
Functional Description
The CY7C1381D/CY7C1383D/CY7C1383F is a 3.3 V,
512K × 36 and 1M × 18 synchronous flow through SRAMs,
designed to interface with high speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133 MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automatically
for the rest of the burst access. All synchronous inputs are gated
by registers controlled by a positive edge triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address pipelining chip enable (CE
1
), depth-expansion
chip enables (CE
2
and CE
3
), burst control inputs (ADSC, ADSP,
and ADV), write enables (BW
x
, and BWE), and global write
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
The CY7C1381D/CY7C1383D/CY7C1383F allows interleaved
or linear burst sequences, selected by the MODE input pin. A
HIGH selects an interleaved burst sequence, while a LOW
selects a linear burst sequence. Burst accesses can be initiated
with the processor address strobe (ADSP) or the cache
controller address strobe (ADSC) inputs. Address advancement
is controlled by the address advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when address strobe processor (ADSP) or address strobe
controller (ADSC) are active. Subsequent burst addresses can
be internally generated as controlled by the advance pin (ADV).
CY7C1381D/CY7C1383D/CY7C1383F operates from a +3.3 V
core power supply while all outputs operate with a +2.5 V or
+3.3 V supply. All inputs and outputs are JEDEC-standard and
JESD8-5-compatible.
For a complete list of related documentation, click
here.
Supports 133 MHz bus operations
512K × 36 and 1M × 18 common I/O
3.3 V core power supply (V
DD
)
2.5 V or 3.3 V I/O supply (V
DDQ
)
Fast clock-to-output time
6.5 ns (133 MHz version)
Provides high performance 2-1-1-1 access rate
User selectable burst counter supporting Intel Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
CY7C1381D available in JEDEC-standard Pb-free 100-pin
TQFP, Pb-free and non Pb-free 165-ball FBGA package.
CY7C1383D available in JEDEC-standard Pb-free 100-pin
TQFP. CY7C1383F available in non Pb-free 165-ball FBGA
package.
IEEE 1149.1 JTAG-Compatible Boundary Scan
ZZ sleep mode option
Selection Guide
Description
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
133 MHz
6.5
210
70
100 MHz
8.5
175
70
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
“Errata”
on page 32. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05544 Rev. *V
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 7, 2017

CY7C1381D-100AXCT相似产品对比

CY7C1381D-100AXCT CY7C1383D-133AXC CY7C1383D-133AXI CY7C1381D-100AXC CY7C1383F-133BZI
描述 SRAM 18Mb 100Mhz 512Kx36 Flow-Thru SRAM SRAM 18Mb 133Mhz 1M x 18 Flow-Thru SRAM SRAM 18Mb 100Mhz 512Kx36 Flow-Thru SRAM SRAM 18Mb 133Mhz 1M x 18 Flow-Thru SRAM
产品种类
Product Category
SRAM SRAM SRAM SRAM SRAM
制造商
Manufacturer
Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
RoHS Details Details Details Details No
Memory Size 18 Mbit 18 Mbit 18 Mbit 18 Mbit 18 Mbit
Organization 512 k x 36 1 M x 18 1 M x 18 512 k x 36 1 M x 18
Access Time 8.5 ns 6.5 ns 6.5 ns 8.5 ns 6.5 ns
Maximum Clock Frequency 100 MHz 133 MHz 133 MHz 100 MHz 133 MHz
接口类型
Interface Type
Parallel Parallel Parallel Parallel Parallel
电源电压-最大
Supply Voltage - Max
3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
电源电压-最小
Supply Voltage - Min
3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
Supply Current - Max 175 mA 210 mA 210 mA 175 mA 70 mA
最小工作温度
Minimum Operating Temperature
0 C 0 C - 40 C 0 C - 40 C
最大工作温度
Maximum Operating Temperature
+ 70 C + 70 C + 85 C + 70 C + 85 C
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
封装 / 箱体
Package / Case
TQFP-100 TQFP-100 TQFP-100 TQFP-100 TQFP-100
系列
Packaging
Cut Tape Tray Tray Tray Tray
数据速率
Data Rate
SDR SDR SDR SDR -
Memory Type SDR SDR SDR SDR SDR
Moisture Sensitive Yes Yes Yes Yes Yes
Number of Ports 4 2 2 4 -
工厂包装数量
Factory Pack Quantity
750 72 72 72 136
类型
Type
Synchronous Synchronous Synchronous Synchronous Synchronous
单位重量
Unit Weight
0.023175 oz 0.023175 oz 0.023175 oz 0.023175 oz 0.023175 oz

 
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