The packaged amplifier comes in an air cavity 7 mm
surface mount package with a copper coin paddle
and is comprised of a two stage power amplifier
MMIC. The device includes on-chip ESD protection
structures and DC by-pass capacitors to ease the
implementation and volume assembly of the
packaged part.
The device is specifically designed for use in
7 GHz point-to-point radios for cellular backhaul
applications.
RF
IN
1
9
RF
OUT
2
3
4
5
6
7
8
Pin Configuration
3
Pin No.
1
2
3
Function
RF Input
No Connection
Gate Stg1 Bias
No Connection
Gate Stg2 Bias
Drain Stg2 Bias
No Connection
No Connection
Pin No.
9
10
11
12
2
13
14
15
16
Function
RF Output
No Connection
No Connection
Drain Stg2 Bias
No Connection
Drain Stg1 Bias
No Connection
No Connection
N/C
N/C
Vd2
B
Vg2
N/C
Vg1
N/C
4
Ordering Information
Part Number
MAAP-011161
MAAP-011161-TR0500
MAAP-011161-001SMB
1
Package
Bulk Quantity
500 Piece Reel
Sample Board
5
6
2
7
8
1. Reference Application Note M513 for reel size information.
2. Drain 2 Bias can be connected from either pins 6 or 12
3. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011161
4 W Power Amplifier
7.1 - 7.9 GHz
Rev. V1
Electrical Specifications: Freq. = 7.1 - 7.9 GHz, V
D
= 8 V, I
DQ4
= 2000 mA, T
A
= +25C
Parameter
Small Signal Gain
Input Return Loss
Output Return Loss
Power at 1dB Gain Compression, P1dB
Power at 3dB Gain Compression, P3dB
Saturated Output Power, P
SAT
Output IP3, 25.5 dBm SCL @ Freq = 7.5 GHz
Drain Bias voltage
Drain Current
Gate Voltage
Units
dB
dB
dB
dB
dBm
dBm
dBm
V
mA
V
Min.
18.5
—
7
—
—
35.5
44.5
—
—
-1.5
Typ.
22
12
12
35.5
36
36.5
46.5
8.0
2000
—
Max.
23.5
—
—
—
—
—
—
—
—
-0.5
4. Adjust V
G1
and V
G2
between
–1.2
and
–0.7V
to achieve specified I
DQ
(I
DQ
=I
D1
+I
D2
). V
G1
and V
G2
should be the same voltage.
Absolute Maximum Ratings
5,6,7
Parameter
Input Power
Drain Voltage (V
D
1,2)
Gate Voltage (V
G
1,2)
Continuous Power
Dissipation @ 85ºC
Junction Temperature
(max.)
Junction Temperature
Operating Temperature
Storage Temperature
Absolute Max.
18 dBm
+9 V
-3 V
33.3 W
+175ºC
+150°C
-40°C
to +85°C
-65°C
to +150°C
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
Class 1A HBM devices.
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. MACOM does not recommend sustained operation near
these survivability limits.
7.
Operating at nominal conditions with T
J
≤ 150°C will ensure
MTTF > 1 x 10
6
hours. Channel temperature should be kept
as low as possible to maximize lifetime.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011161
4 W Power Amplifier
7.1 - 7.9 GHz
Recommended PCB Layout
Schematic
Rev. V1
Parts List
Component
C1, C4, C7, C9,
C12
C3, C10
C2, C5, C6, C8,
C11
Value
2.2 µF
0.47 µF
Package
0603
0603
1.0 nF
0603
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011161
4 W Power Amplifier
7.1 - 7.9 GHz
Typical Performance Curves: V
D
= 8 V, I
DQ
= 2 A, V
G
= -1.05 ~ -0.95 V, T
A
= +25C
Broadband Gain (S21) vs. Freq (GHz), Vd = 8V, Id = 2A
30
20
10
27
26
25
24
Rev. V1
Gain (S21) vs. Freq (GHz), Vd = 8V, Id = 2A
S21 (dB)
S21 (dB)
0
-10
-20
23
22
21
20
-30
-40
0
2
4
6
Frequency (GHz)
8
10
12
19
6.9
7.1
7.3
7.5
Frequency (GHz)
7.7
7.9
8.1
IP/OP Return Loss (S11/S22) vs. Freq (GHz), Vd = 8V, Id = 2A
0
S22 (dB)
-5
S11 (dB)
38
P1dB/P3dB/Psat Pwr (dBm) vs. Freq (GHz), Vd = 8V, Id = 2A
39
P1dB/P3dB/Psat (dBm)
-10
S11/S22 (dB)
-15
-20
-25
37
36
Psat (dBm)
P3dB (dBm)
P1dB (dBm)
35
-30
-35
6.9
7.1
7.3
7.5
Frequency (GHz)
7.7
7.9
8.1
34
7.1
7.2
7.3
7.4
7.5
7.6
Frequency (GHz)
7.7
7.8
7.9
52
50
Output IP3 (dBm) vs. SCL O/P Pwr (dBm),
Vd = 8V, Id = 2A
O/P IP3 (dBm) @ 7.1GHz
O/P IP3 (dBm) @ 7.3GHz
O/P IP3 (dBm) @ 7.5GHz
O/P IP3 (dBm) @ 7.7GHz
O/P IP3 (dBm) @ 7.9GHz
Output IP3 (dBm) vs. Freq (GHz), Vd = 8V, Id = 2A
49
O/P IP3 (dBm) @ 25.5dBm SCL O/P Pwr
48
O/P IP3 (dBm) @ 15.5dBm SCL O/P Pwr
Output IP3 (dBm)
48
46
44
42
40
10
15
20
25
SCL Output Power (dBm)
Output IP3 (dBm)
47
46
45
44
30
35
7.1
7.2
7.3
7.4
7.5
7.6
Frequency (GHz)
7.7
7.8
7.9
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MAAP-011161
4 W Power Amplifier
7.1 - 7.9 GHz
Typical Performance Curves: V
D
= 8 V, I
DQ
= 2 A, V
G
= -1.05 ~ -0.95 V, T
A
= +25C
Output Power (dBm) and Power Gain vs. Input
Power (dBm) @ 7.1GHz, Vd = 8V, Id = 2A
Rev. V1
Pwr Gain/PAE @ 7.1GHz vs. OP Pwr (dBm), Vd = 8V, Id = 2A
2600
2500
2400
40
26
Power Gain (dB)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
Output Power (dBm)
30
35
40
Output Power (dBm) / Power Gain (dB)
35
30
25
20
15
10
24
22
Power Added Efficiency (%)
Drain Current (mA)
2200
2100
2000
Output Power (dBm)
Power Gain (dB)
Drain Current (mA)
20
18
16
14
12
5
0
-5
-25
-15
-5
5
Input Power (dBm)
1900
1800
1700
25
15
40
Output Power (dBm) and Power Gain vs. Input
Power (dBm) @ 7.5GHz, Vd = 8V, Id = 2A
Pwr Gain/PAE @ 7.5GHz vs. OP Pwr (dBm), Vd = 8V, Id = 2A
2600
2500
2400
26
Power Gain (dB)
35
30
25
20
Output Power (dBm) / Power Gain (dB)
35
30
25
20
15
10
24
22
Power Added Efficiency (%)
Drain Current (mA)
2200
2100
2000
Output Power (dBm)
Power Gain (dB)
Drain Current (mA)
20
18
16
14
12
0
5
10
15
20
25
Output Power (dBm)
30
35
40
15
10
5
0
5
0
-5
-25
-15
-5
5
Input Power (dBm)
1900
1800
1700
25
15
40
Output Power (dBm) and Power Gain vs. Input
Power (dBm) @ 7.9GHz, Vd = 8V, Id = 2A
Pwr Gain/PAE @ 7.9GHz vs. OP Pwr (dBm), Vd = 8V, Id = 2A
2600
2500
2400
26
Power Gain (dB)
35
Power Added Efficiency (%)
Output Power (dBm) / Power Gain (dB)
35
30
25
20
15
10
24
22
30
25
20
Drain Current (mA)
2200
2100
2000
Output Power (dBm)
Power Gain (dB)
Drain Current (mA)
20
18
16
14
12
0
5
10
15
20
25
Output Power (dBm)
30
35
40
15
10
5
0
5
0
-5
-25
-15
-5
5
Input Power (dBm)
1900
1800
1700
25
15
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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