MIC5060
Ultra Small High-Side MOSFET Driver
General Description
The MIC5060 MOSFET driver is designed for gate control
of N-Channel, enhancement-mode, and power MOSFETs
used as high-side or low-side switches. The MIC5060 can
sustain an on-state output indefinitely.
The MIC5060 operates from a 2.75V to 30V supply. In
high-side configurations, the driver can control MOSFETs
that switch loads of up to 30V. In low-side configurations,
with separate supplies, the maximum switched voltage is
limited only by the MOSFET.
The MIC5060 has a non-inverting, TTL-compatible control
input.
The MIC5060 features an internal charge pump that can
sustain a gate voltage greater than the available supply
voltage. The driver is capable of turning on a logic-level
MOSFET from a 2.75V supply or a standard MOSFET
from a 5V supply. The gate-to-source output voltage is
internally limited to approximately 15V.
The MIC5060 is protected against automotive load dump,
reversed battery, and inductive load spikes of –20V.
The driver’s overvoltage shutdown feature turns off the
external MOSFET at approximately 35V to protect the load
against power supply excursions.
The MIC5060 is available in 3mm x 3mm MLF
®
package.
Datasheets and support documentation can be found on
Micrel’s web site at: www.micrel.com.
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
2.75V to 30V operation
100µA maximum supply current (5V supply)
15µA typical off-state current
Internal charge pump
TTL-compatible input
Withstands 60V transient (load dump)
Reverse battery protected to –20V
Inductive spike protected to –20V
Overvoltage shutdown at 35V
Internal 15V gate protection
Minimum external parts
Operates in high-side or low-side configurations
1µA control input pull-off
Available in 8-pin 3mm x 3mm MLF
®
package
Applications
•
•
•
•
•
Notebook Battery safety switches
UMPC and Web Tablet Battery protection
Battery-powered computer power management
General MOSFET switch applications
Power bus switching
_________________________________________________________________________________________________________________________
Typical Application
3V “Sleep-Mode” Switch with a Logic-Level MOSFET
MLF is a registered trademark of Amkor Technology, Inc.
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 •
http://www.micrel.com
February 2010
M9999-021610-C
Micrel, Inc.
MIC5060
Ordering Information
(1, 2)
Part Number
MIC5060YML
Note:
1. Pin 1 identifier symbol is “•”.
2. MLF is a Green RoHS-compliant package. Lead finish is NiPdAu. Mold compound is Halogen free.
®
Marking Code
MIC5060
Temperature Range
-40°C to +85°C
Configuration
Non-Inverting
Package
8-pin 3mm x 3mm MLF
®
Pin Configuration
8-Pin (3mm x 3mm) MLF
®
(ML)
Top View
Pin Description
Pin Number
1
2
3
4
5
6, 7, 8
Pin Name
V+
Input
Source
Ground
Gate
NC
Pin Function
Supply. Must be decoupled to isolate from large transients caused by the power MOSFET
drain. 10µF is recommended close to pins 1 and 4.
Turns on power MOSFET when taken above (or below) threshold (1.0V typical). Pin 2
requires ~ 1µA to switch.
Connects to source lead of power MOSFET and is the return for the gate clamp zener.
Pin 3 can safely swing to –20V when turning off inductive loads.
Ground.
Drives and clamps the gate of the power MOSFET.
Not internally connected.
February 2010
2
M9999-021610-C
Micrel, Inc.
MIC5060
Absolute Maximum Ratings
(1)
Supply Voltage ................................................. –20V to 40V
Input Voltage .......................................... –20V to V(+)+0.3V
Source Voltage................................................... –20V to V+
Source Current ............................................................50mA
Gate Voltage .................................................... –20V to 50V
Lead Temperature (Soldering, 10 sec) ...................... 260°C
Junction Temperature ................................................ 150°C
Storage Temperature (Ts)............................-65°C to 150°C
Operating Ratings
(2)
Ambient Temperature: ................................ –40°C to +85°C
Supply Voltage (V+) ........................................ 2.75V to 30V
Junction Thermal Resistance
MLF
®
(θ
JA
)..........................................................60°C/W
Electrical Characteristics
(3)
T
J
= T
A
= -40°C to +85°C unless otherwise specified.
Parameter
Supply Current
Condition
V+ = 30V
V+ = 5V
V+ = 3V
Logic Input Voltage Threshold V
IN
Logic Input Current MIC5060
Gate Enhancement
V
GATE
– V
SUPPLY
Zener Clamp
V
GATE
– V
SOURCE
Gate Turn-on Time, t
ON
Note 5
2.75V
≤
V+
≤
30V
T
A
= 25°C
2.75V
≤
V+
≤
30V
3.0V
≤
V+
≤
30V
8.0V
≤
V+
≤
30V
V+ = 4.5V
CL = 1000pF
V+ = 12V
C
L
= 1000pF
Gate Turn-off Time, t
OFF
Note 5
V+ = 4.5V
C
L
= 1000pF
V+ = 12V
C
L
= 1000pF
Overvoltage Shutdown Threshold
Notes:
1.
2.
3.
4.
5.
Exceeding the absolute maximum rating may damage the device.
The device is not guaranteed to function outside its operating rating.
Minimum and maximum Electrical Characteristics are 100% tested at T
A
= 25°C and T
A
= 85°C, and 100% guaranteed over the entire operating
temperature range. Typicals are characterized at 25°C and represent the most likely parametric norm.
“Asserted” refers to a logic high on the MIC5060.
Test conditions reflect worst-case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Applications
Information.
Min.
V
IN
De-Asserted, Note 4
V
IN
Asserted, Note 4
V
IN
De-Asserted, Note 4
V
IN
Asserted, Note 4
V
IN
De-Asserted, Note 4
V
IN
Asserted, Note 4
Digital Low Level
Digital High Level
V
IN
Low
V
IN
High
V
IN
Asserted
V
IN
Asserted
V
IN
switched on, measure time
for V
GATE
to reach V+ + 4V
As above, measure time for
V
GATE
to reach V+ + 4V
V
IN
switched off, measure time
for V
GATE
to reach 1V
As above, measure time for
V
GATE
to reach 1V
35
3.0
13
2.0
-2.0
Typ.
10
5.0
10
60
10
25
Max.
25
10
25
100
25
35
0.8
Units
µA
mA
µA
µA
µA
µA
V
µA
0
1.0
2.0
17
15
2.5
90
6.0
6.0
37
17
8.0
140
30
30
41
µA
V
V
ms
µs
µs
µs
V
February 2010
3
M9999-021610-C
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
