PD - 97425
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low Switching Losses
Maximum Junction Temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of The Parts Tested for I
LM
Positive V
CE (ON)
Temperature Coefficient
Tight Parameter Distribution
Lead Free Package
C
IRGP4069DPbF
IRGP4069D-EPbF
V
CES
= 600V
I
C(Nominal)
= 35A
G
E
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low V
CE (ON)
and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
C
GC
E
TO-247AC
IRGP4069DPbF
E
GC
TO-247AD
IRGP4069D-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Max.
600
76
50
35
105
140
76
50
140
±20
±30
268
134
-55 to +175
Units
V
c
A
d
Continuous Gate-to-Emitter Voltage
V
W
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
R
θJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
f
f
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.56
1.0
–––
40
Units
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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10/2/09
IRGP4069DPbF/IRGP4069D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
1.3
1.6
1.9
2.0
—
-18
25
1.0
770
2.2
1.4
—
Max.
—
—
1.85
—
—
6.5
—
—
70
—
3.8
—
±100
Units
V
Conditions
V
GE
= 0V, I
C
= 100μA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
e
d
= 150°C
d
= 175°C
d
mV/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
I
C
= 35A, V
GE
= 15V, T
J
= 25°C
V
V
I
C
= 35A, V
GE
= 15V, T
J
I
C
= 35A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 1.0mA
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔTJ
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
V
CE
= 50V, I
C
= 35A, PW = 60μs
S
μA
V
nA
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 35A
I
F
= 35A, T
J
= 175°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
69
18
29
390
632
1022
46
33
105
44
1013
929
1942
43
35
127
61
2113
197
65
Max.
104
27
44
508
753
1261
56
42
117
54
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 35A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
I
C
= 35A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 35A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
pF
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 140A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +20V to 0V
FULL SQUARE
5
—
—
—
—
304
120
25
—
—
—
—
μs
μJ
ns
A
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 35A
V
GE
= 15V, Rg = 10Ω, L =210μH, L
s
= 150nH
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
2
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IRGP4069DPbF/IRGP4069D-EPbF
80
70
60
50
40
30
20
10
0
25
50
75
100
T C (°C)
125
150
175
300
250
200
Ptot (W)
IC (A)
150
100
50
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
100μsec
10μsec
100
IC (A)
10
1msec
DC
IC (A)
10
1
1000
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
140
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
ICE (A)
80
60
40
20
0
0
2
4
VGE = 10V
VGE = 8.0V
6
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
VCE (V)
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3
IRGP4069DPbF/IRGP4069D-EPbF
140
120
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
140
120
100
IF (A)
ICE (A)
80
60
40
20
0
0
80
60
40
20
0
-40°C
25°C
175°C
2
4
6
8
10
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 18A
12
10
8
6
4
2
0
ICE = 35A
ICE = 70A
ICE = 18A
ICE = 35A
ICE = 70A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
IC, Collector-to-Emitter Current (A)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
140
120
100
80
60
40
20
0
T J = 175°C
TJ = 25°C
18
16
14
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
ICE = 18A
ICE = 35A
ICE = 70A
4
5
6
7
8
9
10 11 12 13 14
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 60μs
4
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IRGP4069DPbF/IRGP4069D-EPbF
4000
3500
3000
Swiching Time (ns)
1000
Energy (μJ)
2500
2000
1500
1000
500
0
0
10
20
30
EON
tdOFF
100
tF
EOFF
tdON
tR
10
40
50
60
70
0
10
20
30
40
50
60
70
IC (A)
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
3000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
2500
Swiching Time (ns)
EON
Energy (μJ)
2000
EOFF
1500
tdOFF
100
tF
tdON
1000
tR
10
500
0
25
50
Rg (Ω)
75
100
0
10
20
30
40
50
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
35
RG = 10Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 210μH; V
CE
= 400V, I
CE
= 35A; V
GE
= 15V
26
24
22
IRR (A)
30
IRR (A)
25
RG = 22Ω
20
18
20
RG = 47Ω
15
RG = 100Ω
10
10
20
30
40
IF (A)
50
60
70
16
14
0
20
40
60
80
100
RG (
Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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