CY62137FV30 MoBL
®
2-Mbit (128 K × 16) Static RAM
2-Mbit (128 K × 16) Static RAM
Features
■
■
Functional Description
The CY62137FV30 is a high performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
®
) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device into standby mode reduces power consumption by more
than 99% when deselected (CE HIGH or both BLE and BHE are
HIGH). The input and output pins (I/O
0
through I/O
15
) are placed
in a high impedance state in the following conditions when the
device is deselected (CE HIGH), the outputs are disabled (OE
HIGH), both the Byte High Enable and the Byte Low Enable are
disabled (BHE, BLE HIGH), or during an active write operation
(CE LOW and WE LOW).
Write to the device by taking Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
0
through I/O
7
) is written into the location
specified on the address pins (A
0
through A
16
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
16
).
Read from the device by taking Chip Enable (CE) and Output
Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O
0
to I/O
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. See the
Truth Table on page 11
for a
complete description of read and write modes.
For a complete list of related documentation,
click here.
Very high speed: 45
Temperature ranges
❐
Industrial: –40 °C to +85 °C
Wide voltage range: 2.20 V–3.60 V
Pin
compatible
with
CY62137CV/CV25/CV30/CV33,
CY62137V, and CY62137EV30
Ultra low standby power
❐
Typical standby current: 1
A
❐
Maximum standby current: 5
A
(Industrial)
Ultra low active power
❐
Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Byte power down feature
Available in Pb free 48-ball very fine-pitch ball grid array
(VFBGA) and 44-pin thin small outline package (TSOP) II
package
■
■
■
■
■
■
■
■
■
Logic Block Diagram
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DATA IN DRIVERS
ROW DECODER
128K x 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
POWER DOWN
CIRCUIT
CE
BHE
BLE
A
11
A
12
A
13
A
14
A
15
A
16
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation
Document Number: 001-07141 Rev. *P
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised January 5, 2015
CY62137FV30 MoBL
®
Contents
Product Portfolio .............................................................. 3
Pin Configuration ............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagrams .......................................................... 13
Acronyms ........................................................................ 15
Document Conventions ................................................. 15
Units of Measure ....................................................... 15
Document History Page ................................................. 16
Sales, Solutions, and Legal Information ...................... 18
Worldwide Sales and Design Support ....................... 18
Products .................................................................... 18
PSoC® Solutions ...................................................... 18
Cypress Developer Community ................................. 18
Technical Support ..................................................... 18
Document Number: 001-07141 Rev. *P
Page 2 of 18
CY62137FV30 MoBL
®
Product Portfolio
Power Dissipation
Product
Range
Min
CY62137FV30LL Industrial
2.2 V
V
CC
Range (V)
Typ
[1]
3.0 V
Max
3.6 V
45
Speed
(ns)
Operating I
CC
(mA)
f = 1MHz
Typ
[1]
1.6
Max
2.5
f = f
max
Typ
[1]
13
Max
18
Standby I
SB2
(A)
Typ
[1]
1
Max
5
Pin Configuration
Figure 1. 48-ball VFBGA pinout
[2, 3]
1
BLE
I/O
8
I/O
9
2
OE
BHE
I/O
10
3
A
0
A
3
A
5
NC
NC
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
NC
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
A
B
C
D
E
F
G
H
Figure 2. 44-pin TSOP II pinout
[2]
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
16
A
15
A
14
A
13
A
12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
NC
V
SS
I/O
11
V
CC
I/O
12
I/O
14
I/O
13
A
14
I/O
15
NC
NC
A
8
A
12
A
9
Notes
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
2. NC pins are not connected on the die.
3. Pins D3, H1, G2, H6 and H3 in the VFBGA package are address expansion pins for 4 Mb, 8 Mb, 16 Mb, and 32 Mb and 64 Mb respectively.
Document Number: 001-07141 Rev. *P
Page 3 of 18
CY62137FV30 MoBL
®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature
with power applied .................................. –55 °C to + 125 °C
Supply voltage to ground potential
[4, 5]
.........–0.3 V to 3.9 V
DC voltage applied
to outputs in High Z state
[4, 5]
.......................–0.3 V to 3.9 V
DC input voltage
[4, 5]
.....................................–0.3 V to 3.9 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL–STD–883, method 3015) ............................... > 2001 V
Latch up current ..................................................... > 200 mA
Operating Range
Device
CY62137FV30LL
Range
Ambient
Temperature
V
CC
[6]
Industrial –40 °C to +85 °C 2.2 V to 3.6 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1[8]
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
V
CC
operating supply
current
Test Conditions
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
GND < V
I
< V
CC
f = f
max
= 1/t
RC
f = 1 MHz
V
CC
= V
CC(max)
I
OUT
= 0 mA
CMOS levels
Output leakage current GND < V
O
< V
CC
, Output disabled
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
45 ns (Industrial)
Min
2.0
2.4
–
–
1.8
2.2
–0.3
–0.3
–1
–1
–
–
–
Typ
[7]
–
–
–
–
–
–
–
–
–
–
13
1.6
1
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
18
2.5
5
A
Unit
V
V
V
V
V
V
V
V
A
A
mA
Automatic power-down CE > V
CC
–0.2 V, or
current – CMOS inputs (BHE and BLE) > V
CC
–0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE and WE), V
CC
= V
CC(max)
Automatic power-down CE > V
CC
– 0.2 V or
current – CMOS inputs (BHE and BLE) > V
CC
–0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
I
SB2 [8]
–
1
5
A
Notes
4. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
5. V
IH(max)
=V
CC
+ 0.75 V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
s
ramp time from 0 to V
CC(min)
and 200
s
wait time after V
CC
stabilization.
7. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C
8. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
specification. Other inputs can be left floating.
Document Number: 001-07141 Rev. *P
Page 4 of 18
CY62137FV30 MoBL
®
Capacitance
Parameter
[9]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[9]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch, two
layer printed circuit board
48-ball VFBGA 44-pin TSOP II Unit
75
10
77
13
C/W
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
V
CC
Output
R1
V
CC
30 pF
Including
JIG and
Scope
R2
10%
GND
Rise Time = 1 V / ns
All Input Pulses
90%
90%
10%
Fall Time = 1 V / ns
Equivalent to: THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
Parameters
R1
R2
R
TH
V
TH
2.5 V (2.2 V to 2.7 V)
16667
15385
8000
1.20
3.0 V (2.7 V to 3.6 V)
1103
1554
645
1.75
Unit
V
Notes
9. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-07141 Rev. *P
Page 5 of 18
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