NTB5426N, NTP5426N,
NVB5426N
Power MOSFET
120 Amps, 60 Volts
N-Channel D
2
PAK, TO-220
Features
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I
D
MAX
(Note 1)
120 A
•
•
•
•
•
•
•
•
•
Low R
DS(on)
High Current Capability
Avalanche Energy Specified
AEC Q101 Qualified
−
NVB5426N
These Devices are Pb−Free and are RoHS Compliant
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Parameter
Symbol
V
DSS
V
GS
V
GS
I
D
Value
60
$20
30
120
85
P
D
I
DM
T
J
, T
stg
I
S
E
AS
215
260
−55
to
+175
60
735
W
A
°C
A
mJ
Unit
V
V
V
A
V
(BR)DSS
60 V
R
DS(ON)
MAX
6.0 mW @ 10 V
Applications
N−Channel
D
G
S
4
4
1
TO−220AB
CASE 221A
STYLE 5
2
3
1
D
2
PAK
CASE 418B
STYLE 2
MAXIMUM RATINGS
(T
J
= 25°C Unless otherwise specified)
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Gate−to−Source Voltage
−
Nonrepetitive
(T
P
< 10
ms)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
2
3
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 50 V
dc
, V
GS
= 10 V
dc
, I
L(pk)
= 70 A,
L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
T
L
260
°C
5426N
AYWW
1
Gate
3
Source
2
Drain
G
A
Y
WW
1
Gate
5426N
AYWW
2
Drain
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain)
Steady State (Note 1)
Symbol
R
qJC
Max
0.7
Unit
°C/W
3
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 1
1
Publication Order Number:
NTB5426N/D
NTB5426N, NTP5426N, NVB5426N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C Unless otherwise specified)
Characteristics
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(th)
V
GS(th)
/T
J
V
DS(on)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
t
a
t
b
Q
RR
V
GS
= 0 V
I
S
= 60 A
T
J
= 25°C
T
J
= 100°C
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 60 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 60 A
V
GS
= 10 V, I
D
= 60 A
V
GS
= 10 V, I
D
= 60 A, 150°C
Static Drain−to−Source On−Resistance
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
5800
1000
370
150
6.0
28
67
170
nC
pF
V
GS
= 10 V, I
D
= 60 A
V
DS
= 15 V, I
D
= 20 A
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C
T
J
= 150°C
V
DS
= 0 V, I
D
= 250
mA
60
64
1.0
25
$100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−Body Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Voltage
V
DS
= 0 V, V
GS
=
$20
V
V
GS
= V
DS
, I
D
= 250
mA
2.0
3.1
9.2
0.3
0.6
4.9
65
4.0
V
mV/°C
0.36
V
6.0
mW
S
SWITCHING CHARACTERISTICS, V
GS
= 10 V
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.88
0.78
75
50
25
235
mC
ns
1.1
V
dc
15
100
105
95
ns
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Stored Charge
I
S
= 60 A
dc
, V
GS
= 0 V
dc
,
dI
S
/dt = 100 A/ms
2. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTP5426N
NTB5426NT4G
NVB5426NT4G
Package
TO−220AB (Pb−Free)
D
2
PAK (Pb−Free)
D
2
PAK (Pb−Free)
Shipping
†
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
240
200
160
120
80
40
0
240
V
DS
≥
10 V
I
D
, DRAIN CURRENT (A)
200
160
120
80
T
J
= 25°C
40
0
T
J
=
−55°C
3
4
5
6
7
10 V
6.6 V
6.4 V
T
J
= 25°C
6.2 V
I
D
, DRAIN CURRENT (A)
6.0 V
5.8 V
5.4 V
5.0 V
V
GS
= 4.6 V
T
J
= 125°C
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
5
6
7
8
9
10
I
D
= 60 A
T
J
= 25°C
0.006
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= 10 V
0.005
0.004
10
30
50
70
90
110
130
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
2.5
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
D
= 60 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
2.0
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1.5
1000
T
J
= 125°C
1.0
0.5
−50 −25
0
25
50
75
100
125
150
175
100
5
10
15
20
25
30
35
40
45
50
55 60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
12,000
10,000
C, CAPACITANCE (pF)
C
iss
8000
6000
C
oss
4000
2000
0
C
rss
0
10
20
30
40
50
60
V
GS
= 0 V
T
J
= 25°C
10
8.0
6.0
4.0
2.0
0
Q1
QT
Q2
T
J
= 25°C
I
D
= 60 A
V
DS
= 48 V
0
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
V
DD
= 48 V
I
D
= 60 A
V
GS
= 10 V
t, TIME (ns)
100
Figure 8. Gate−to−Source Voltage vs. Total
Charge
t
f
I
S
, SOURCE CURRENT (A)
120
100
80
60
40
20
0
0.5
0.6
0.7
0.8
0.9
1.0
V
GS
= 0 V
T
J
= 25°C
t
d(off)
t
r
t
d(on)
10
1.0
1.0
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
800
100
ms
1 ms
dc
10
10 ms
10
ms
AVALANCHE ENERGY (mJ)
600
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
V
GS
= 10 V
Single Pulse
T
C
= 25°C
I
D
= 70 A
400
1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
200
0
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTB5426N, NTP5426N, NVB5426N
TYPICAL CHARACTERISTICS
100
D = 0.5
10 0.2
0.1
R(t) (°C/W)
1
0.1
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
Surface Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.1
1
10
100
1000
0.05
0.02
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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