c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72344
S-71661-Rev. C, 06-Aug-07
www.vishay.com
1
New Product
SUD50N04-07L
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 32 V, V
GS
= 0 V
V
DS
= 32 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 32 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 10 A
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
b
Symbol
Test Conditions
Min
40
1
Typ
Max
Unit
3
± 100
1
50
150
V
nA
µA
A
65
0.006
0.0074
0.012
0.015
0.0085
20
57
0.011
Ω
g
fs
V
DS
= 15 V, I
D
= 15 A
S
2800
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
320
190
50
V
DS
= 20 V, V
GS
= 10 V, I
D
= 50 A
10
10
2.0
11
V
DD
= 20 V, R
L
= 0.4
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
G
= 2.5
Ω
20
40
15
20
30
60
25
43
100
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/µs
0.90
30
1.50
45
ns
Ω
75
nC
pF
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
S
I
SM
V
SD
t
rr
A
V
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
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