IRGP4660DPbF
IRGP4660D-EPbF
V
CES
= 600V
I
C
= 60A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
G
C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
C
V
CE(on)
typ. = 1.60V @ I
C
= 48A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
GC
E
E
GC
E
n-channel
G
Gate
TO-247AC
IRGP4660DPbF
TO-247AD
IRGP4660D-EP
C
Collector
E
Emitter
Features
Low V
CE(ON)
and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4660DPbF
IRGP4660D-EPbF
Absolute Maximum Ratings
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4660DPbF
IRGP4660D-EPbF
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
= 15V
Clamped Inductive Load Current, V
GE
= 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
c
f
Continuous Gate-to-Emitter Voltage
Max.
600
100
60
144
192
100
60
192
±20
±30
330
170
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.45
0.92
–––
40
Units
V
A
V
W
°C
d
d
Parameter
Units
°C/W
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
1
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IRGP4660DPbF/IRGP4660D-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
V
CE(on)
V
GE(th)
ΔV
GE(th)
/ΔT
J
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.30
1.60
1.90
2.00
—
-21
32
1.0
450
1.95
1.45
—
Typ.
95
28
35
625
1275
1900
60
40
145
35
1625
1585
3210
55
45
165
45
3025
245
90
—
V
V
GE
= 0V, I
C
= 150μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-175°C)
1.90
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
—
V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
6.5
V
V
CE
= V
GE
, I
C
= 1.4mA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
—
S
V
CE
= 50V, I
C
= 48A, PW = 80μs
150
V
GE
= 0V, V
CE
= 600V
μA
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
2.91
I
F
= 48A
V
—
I
F
= 48A, T
J
= 175°C
±100
nA V
GE
= ±20V
Max.
140
42
53
1141
1481
2622
78
56
176
46
—
—
—
—
—
—
—
—
—
—
Units
nC
Conditions
I
C
= 48A
V
GE
= 15V
V
CC
= 400V
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
Energy losses include tail & diode reverse recovery
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
e
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
μJ
g
ns
μJ
I
C
= 48A, V
CC
= 400V, V
GE
=15V
R
G
=10Ω, L=200μH, L
S
=150nH, T
J
= 175°C
Energy losses include tail & diode reverse recovery
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
R
G
= 10Ω, L = 200μH, L
S
= 150nH
T
J
= 175°C
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
V
CC
= 480V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 48A
V
GE
= 15V, Rg = 10Ω, L =200μH, L
s
= 150nH
g
ns
pF
FULL SQUARE
5
—
—
—
—
845
115
40
—
—
—
—
μs
μJ
ns
A
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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November 17, 2014
IRGP4660DPbF/IRGP4660D-EPbF
100
350
300
250
80
Ptot (W)
25
50
75
100
T C (°C)
125
150
175
60
IC (A)
200
150
100
40
20
50
0
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100μsec
100
IC (A)
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=15V
200
180
160
140
ICE (A)
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
120
100
80
60
40
20
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
8
10
0
2
4
6
8
10
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
3
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© 2014 International Rectifier
VCE (V)
VCE (V)
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
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November 17, 2014
IRGP4660DPbF/IRGP4660D-EPbF
200
180
160
140
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
200
180
160
140
120
-40°c
25°C
175°C
ICE (A)
120
100
80
60
40
20
0
0
2
4
6
8
10
IF (A)
100
80
60
40
20
0
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 80μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
VCE (V)
10
8
6
4
2
0
5
10
VGE (V)
VCE (V)
12
ICE = 24A
ICE = 48A
ICE = 96A
12
10
8
6
4
2
0
ICE = 24A
ICE = 48A
ICE = 96A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
18
16
14
VCE (V)
ICE (A)
200
180
160
140
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
T J = 175°C
T J = 25°C
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 24A
ICE = 48A
ICE = 96A
120
100
80
60
40
20
0
15
20
0
5
VGE (V)
10
15
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
4
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© 2014 International Rectifier
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
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November 17, 2014
IRGP4660DPbF/IRGP4660D-EPbF
6000
5000
EOFF
4000
1000
Swiching Time (ns)
Energy (μJ)
tdOFF
100
tdON
tF
tR
3000
2000
1000
0
0
50
IC (A)
EON
10
100
150
0
20
40
IC (A)
60
80
100
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
5000
4500
4000
EOFF
EON
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
1000
tdOFF
Swiching Time (ns)
Energy (μJ)
3500
3000
2500
2000
1500
1000
0
25
50
75
tR
100
tF
tdON
10
100
125
0
25
50
75
100
125
Rg (Ω)
RG (Ω)
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
45
40
35
30
IRR (A)
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200μH; V
CE
= 400V, I
CE
= 48A; V
GE
= 15V
45
RG = 10Ω
40
35
IRR (A)
25
20
15
10
5
0
0
20
RG = 22
Ω
RG = 47Ω
RG = 100Ω
30
25
20
15
10
40
IF (A)
60
80
100
0
25
50
75
100
125
RG (
Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
5
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© 2014 International Rectifier
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
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November 17, 2014
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