VS-VSK.230..PbF Series
www.vishay.com
Vishay Semiconductors
SCR / SCR and SCR / Diode
(MAGN-A-PAK Power Modules), 230 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 V
RMS
isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
MAGN-A-PAK
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
I
T(AV)
Type
Package
Circuit
configuration
230 A
Modules - thyristor, standard
MAGN-A-PAK
Two SCRs doubler circuit,
SCR / diode doubler circuit, positive control,
SCR / diode doubler circuit, negative control,
two SCRs common cathodes,
two SCRs common anodes
DESCRIPTION
This VSK series of MAGN-A-PAK modules uses high voltage
power thyristor / thyristor and thyristor / diode in seven
basic configurations. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√t
V
DRM
/V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
85 °C
VALUES
230
510
7500
7850
280
260
280
800 to 2000
-40 to 130
kA
2
s
kA
2
√s
V
°C
A
UNITS
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
12
VS-VSK.230-
16
18
20
V
RRM
/V
DRM
, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
800
1200
1600
1800
2000
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1300
1700
1900
2100
50
I
RRM
/I
DRM
AT 130 °C
MAXIMUM
mA
Revision: 27-Apr-17
Document Number: 93053
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.230..PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial
T
J
= T
J
maximum
VALUES
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
0.73
1.59
500
1000
mA
kA
2
√s
V
mΩ
V
kA
2
s
A
UNITS
A
°C
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle on-state
non-repetitive, surge current
I
TSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
√t
for fusing
I
2
√t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
maximum
(I >
π
x I
T(AV)
), T
J
= T
J
maximum
I
TM
=
π
x I
T(AV)
, T
J
= T
J
maximum, 180° conduction,
average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 12 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 12 V, resistive load = 1
Ω,
gate pulse: 10 V, 100 μs, T
J
= 25 °C
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t
d
t
r
t
q
TEST CONDITIONS
T
J
= 25 °C, gate current = 1 A dI
g
/dt = 1 A/μs,
V
d
= 0.67 % V
DRM
I
TM
= 300 A; dI/dt = 15 A/μs; T
J
= T
J
maximum;
V
R
= 50 V; dV/dt = 20 V/μs; gate 0 V, 100
Ω
VALUES
1.0
2.0
50 to 150
μs
UNITS
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I
RRM,
I
DRM
V
INS
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T
J
= T
J
maximum, exponential to 67 % rated V
DRM
VALUES
50
3000
1000
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GT
V
GT
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
t
p
≤
5 ms, T
J
= T
J
maximum
t
p
≤
5 ms, T
J
= T
J
maximum
T
J
= -40 °C
T
J
= 25 °C
T
J
= T
J
maximum
T
J
= - 40 °C
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
Maximum rate of rise of turned-on current
I
GT
V
GD
I
GD
dI/dt
T
J
= 25 °C
T
J
= T
J
maximum
Anode supply = 12 V,
resistive load; Ra = 1
Ω
Anode supply = 12 V,
resistive load; Ra = 1
Ω
VALUES
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
V
mA
A/μs
mA
V
UNITS
W
A
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, rated V
DRM
applied
T
J
= T
J
maximum, I
TM
= 400 A, rated V
DRM
applied
Revision: 27-Apr-17
Document Number: 93053
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.230..PbF Series
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth, and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of about 3 h to allow for the spread of the
compound.
TEST CONDITIONS
VALUES
-40 to 130
-40 to 150
0.125
K/W
0.02
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
Mounting
torque ± 10 %
MAGN-A-PAK to heatsink
busbar to MAGN-A-PAK
4 to 6
500
17.8
Nm
g
oz.
Approximate weight
Case style
MAGN-A-PAK
ΔR
CONDUCTION PER JUNCTION
DEVICES
VSK.230-
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.009
120°
0.010
90°
0.010
60°
0.020
30°
0.032
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.007
120°
0.011
90°
0.015
60°
0.020
30°
0.033
UNITS
K/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
60
0
40
80
30°
Maximum Allowable Case Temperature (°C)
VSK.230..Series
R
thJC
(DC) = 0.125 K/W
130
120
110
100
90
30°
80
70
60
0
50
100
150
60°
90°
VSK.230..Series
R
thJC
(DC) = 0.125 K/W
Ø
Ø
Conduction Angle
Conduction Period
60°
90°
120°
180°
120
160
200
240
120°
200
180°
250
300
DC
350 400
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 27-Apr-17
Document Number: 93053
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.230..PbF Series
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave On-State Current (A)
7000
6500
6000
5500
5000
4500
4000
3500
3000
1
10
100
VSK.230..Series
Per Junction
At any rated load condition and with
rated V
RRM
applied following
surge
Initial T
J
= 130 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
350
Maximum Average On-State
Power Loss (W)
300
250
200
150
100
50
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction Angle
VSK.230..Series
Per Junction
T
J
= 130 °C
50
100
150
200
250
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
350
Peak Half
Sine
Wave On-State Current (A)
Maximum Average On-State
Power Loss (W)
300
250
200
150
100
50
0
0
50
180°
120°
90°
60°
30°
7500
7000
6500
6000
5500
5000
4500
4000
3500
3000
0.01
DC
Maximum non repetitive
surge
current
vs. pulse drain duration.Control of
conduction may not be maintained.
Initial T
J
= 130 °C
No voltage reapplied
Rated V
RRM
applied
RMS limit
Ø
Conduction Period
VSK.230..Series
Per Junction
T
J
= 130 °C
100
150
200
250
300
350 400
VSK.230..Series
Per Junction
0.1
1
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Maximum Total On-State Power Loss (W)
700
600
500
Conduction Angle
400
300
200
100
0
0
100
200
300
400
VSK.230..Series
Per Module
T
J
= 130 °C
Ø
Ø
180°
120°
90°
60°
30°
0
0.
.1 K
12
K/
/W
W
0.1
6K
/
0.2
W
K/W
0.2
5K
0.3
/W
K/W
W
K/
06
0.
/W
K
08
0.
0.
03
W
K/
R
th
S
A
=
0.0
1K
/W
R
-
Δ
500
20
40
60
80
100
120
Total RMS Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Revision: 27-Apr-17
Document Number: 93053
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSK.230..PbF Series
www.vishay.com
Vishay Semiconductors
+
180° (Sine)
180° (Rect.)
1500
Maximum Total Power Loss (W)
1350
1200
1050
900
750
600
450
300
150
0
0
50
100 150 200 250 300 350 400 450
2 x VSK.230..Series
Single
phase bridge
connected
T
J
= 130 °C
-
0.
08
0
0.
6
0 .0
0.1
K/
R
th
S
W
K/
W
3K
A
=
K/
W
/W
1
0.0
0.1
6K
K/W
/W
R
-
Δ
0.2
K/W
1.5 K
/W
20
40
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
2000
Maximum Total Power Loss (W)
+
120° (Rect.)
1800
1600
1400
1200
1000
800
600
400
200
0
0
100
200
300
400
500
600
3 x VSK.230..Series
Three phase bridge
connected
T
J
= 130 °C
-
0.
04
0.0
5
0.0
01
0.
02
0.
K/
0.
03
R
th
S
W
W
K/
W
K/
K/
W
40
A
=
K/
W
6K
/W
0.0
8K
/W
0.1
K/W
0.12
K/W
0.16
K/W
0.25 K
/W
0.0
05
W
K/
R
-
Δ
20
60
80
100
120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
Instantaneous On-State Current (A)
10 000
Q
rr -
Typical Reverse Recovery Charge (μC)
1800
1600
1400
1200
1000
800
600
400
200
0
10
20
30
40
50
60
70
80
90 100
VSK.230..Series
Per Junction
T
J
= 130 °C
I
TM
= 800 A
500 A
300 A
200 A
100 A
50 A
1000
T
J
= 25 °C
T
J
= 130 °C
VSK.230..Series
Per Junction
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-State Voltage (V)
Fig. 10 - On-State Voltage Drop Characteristics
dI/dt
- Rate of Fall of On-State Current (A/μs)
Fig. 11 - Reverse Recovery Charge Characteristics
Revision: 27-Apr-17
Document Number: 93053
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
