VS-300U(R) Series
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Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 300 A
FEATURES
• Alloy diode
• Popular series for rough service
• Stud cathode and stud anode version
• Designed and qualified for industrial level
DO-205AB (DO-9)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Welders
PRODUCT SUMMARY
I
F(AV)
Package
Circuit configuration
300 A
DO-205AB (DO-9)
Single diode
• Power supplies
• Motor controls
• Battery chargers
• General industrial current rectification
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
TEST CONDITIONS
VALUES
300
T
C
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
V
RRM
T
J
Range
150
6550
A
6850
214
195
400
-65 to +200
V
°C
kA
2
s
UNITS
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
10
20
VS-300U(R)..
30
40
60
V
RRM
,
MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
100
200
300
400
600
V
RSM
,
MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
200
300
400
500
700
40
I
RRM
MAXIMUM
AT T
J
= 175 °C
mA
Revision: 23-Mar-17
Document Number: 93508
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300U(R) Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
TEST CONDITIONS
180° conduction, half sine wave
t = 10 ms
Maximum peak, one cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Maximum value of threshold voltage
Maximum value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)
r
f
V
FM
T
J
= 200 °C
I
pk
= 942 A, T
J
= 25 °C
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
300
130
6550
6850
5500
Sinusoidal half wave,
initial T
J
= T
J
maximum
5750
214
195
151
138
2140
0.610
0.751
1.40
kA
2
s
V
m
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed mounting torque
+0 -20 %
Approximate weight
Case style
Note
(1)
302U-A uses case style B-26
(JEDEC
®
) see dimensions - link at the end of datasheet
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
TEST CONDITIONS
VALUES
-65 to +200
0.18
K/W
0.08
37
28
250
Nm
g
UNITS
°C
DO-205AB (DO-9)
(1)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.020
0.024
0.031
0.045
0.077
RECTANGULAR CONDUCTION
0.015
0.025
0.034
0.047
0.077
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 23-Mar-17
Document Number: 93508
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300U(R) Series
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Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
200
300U40AM20
RthJC (DC) = 0.18 K/W
200
190
180
170
160
150
140
130
120
110
0
100
30°
300U40AM20
RthJC (DC) = 0.18 K/W
180
Conduction Angle
Conduction Period
160
140
30°
60°
90°
120°
180°
60°
90°
120°
180° DC
120
0
50 100 150 200 250 300 350
Average Forward Current (A)
200
300
400
500
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
400
350
300
250
200
150
180°
120°
90°
60°
30°
RMS Limit
A
hS
Rt
0.
2
0.
3
K/
W
=
W
K/
0.1
K/
W
0.4
K/
W
0.5
K/W
0.7
K/W
1K
/W
1.5 K
/W
3 K/W
aR
elt
-D
Conduction Angle
100
50
0
0
300U40AM20
Tj = 200°C
50 100 150 200 250 300 350
50
25
0
Average Forward Current (A)
75
100 125 150 175 200
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
500
450
400
350
300
250
200
150
100
50
0
0
100
200
300
400
500
50
75
100 125 150
175
200
300U40AM20
Tj = 200°C
Conduction Period
DC
180°
120°
90°
60°
30°
RMS Limit
Rt
A
h
S
=
0.
1
K/
0.
2
K/
W
0.
W
3
R
-
Δ
K/
W
0.5
K/W
1 K/
W
1.5 K
/W
3 K/W
0.7
K/W
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 23-Mar-17
Document Number: 93508
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300U(R) Series
www.vishay.com
Vishay Semiconductors
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 200°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
7000
6500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = 200°C
6000
No Voltage Reapplied
5500
Rated Vrrm Reapplied
5000
4500
4000
3500
3000
2500
2000
300U40AM20
1500
0.01
300U40AM20
10
100
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous Forward Current (A)
1000
Tj = 25°C
100
Tj = 200°C
300U40AM20
10
0
0.5
1
1.5
2
2.5
3
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
RthJC = 0.18 K/W
(DC Operation)
0.1
0.01
300U40AM20
0.001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Revision: 23-Mar-17
Document Number: 93508
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-300U(R) Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
30
2
-
-
-
-
-
-
-
0
3
U
4
40
5
A
6
M20
7
Vishay Semiconductors product
30 = essential part number
0 = standard device
2 = 300U top threaded version
• U = stud normal polarity (cathode to stud)
• UR = stud reverse polarity (anode to stud)
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
A = essential part number
None = stud base DO-205AB (DO-9) 3/4" 16UNF-2A
M20 = Metric device M20 x 1.5 (available with standard device only)
2
3
4
5
6
7
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95340
Revision: 23-Mar-17
Document Number: 93508
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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