This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3424BDV
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 3.2 A, dI/dt = 100 A/µs
I
S
= 3 A
0.8
13.8
6.21
8.5
5.3
T
C
= 25 °C
2.48
30
1.2
20.7
9.32
ns
A
V
nC
b
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
=
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7 A
V
GS
= 4.5 V, I
D
= 5.8 A
V
DS
= 15 V, I
D
= 7 A
Min.
30
Typ.
Max.
Unit
V
23.75
5.8
1
3
± 100
1
10
30
0.0230
0.0315
17
735
0.0280
0.0380
mV/°C
V
nA
µA
A
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 7 A
V
DS
= 24 V, V
GS
= 4.5 V, I
D
= 7 A
f = 1 MHz
V
DD
= 15 V, R
L
= 2.7
I
D
5.6 A, V
GEN
= 10 V, R
g
= 1
130
34
13.05
6.2
2.16
2.15
2.45
4.5
10
16
7
18
3.7
6.8
15
24
10.5
27
128
26
18
19.6
9.3
pF
nC
ns
V
DD
= 15 V, R
L
= 3.2
I
D
4.7 A, V
GEN
= 4.5 V, R
g
= 1
85
17
12
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3424BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
30
V
GS
= 10
V
thru 4.5
V
24
I
D
- Drain Current (A)
V
GS
= 4
V
18
I
D
- Drain Current (A)
4
5
3
T
J
= 25 °C
2
T
J
= 125 °C
1
12
6
0
0
1
2
3
V
GS
= 3
V
4
5
T
J
= - 55 °C
0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.06
1000
Transfer Characteristics curves vs. Temp
R
DS(on)
- D to S On-Resistance (Ω)
0.05
C - Capacitance (pF)
C
iss
800
0.04
V
GS
= 4.5
V
0.03
V
GS
= 10
V
0.02
600
400
C
oss
200
C
rss
0.01
0
0
8
16
24
32
40
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 7 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.8
Capacitance
V
GS
= 4.5
V,
I
D
= 5.8 A
1.4
6
V
DS
= 15
V
V
DS
= 24
V
1.2
V
GS
= 10
V,
I
D
= 7 A
1.0
4
2
0.8
0
0
3
6
9
12
15
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Q
g
- Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3424BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
0.06
I
D
= 6.9 A
0.05
I
S
- Source Current (A)
10
R
DS(on)
- On-Resistance (Ω)
T
J
= 150 °C
0.04
T
A
= 125 °C
0.03
1
T
J
= 25 °C
0.1
0.02
T
A
= 25 °C
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
I
D
= 250
µA
2.2
2.0
1.8
1.6
Power (W)
V
GS(th)
(V)
R
DS(on)
vs. V
GS
vs. Temperature
20
16
12
T
A
= 25 °C
8
4
1.4
1.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Junction Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.01
T
A
= 25 °C
Single Pulse
Single Pulse Power
10
I
D
- Drain Current (A)
0.1
0.001
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
DS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si3424BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
4.0
8
I
D
- Drain Current (A)
Package Limited
6
Power
3.2
2.4
4
1.6
2
0.8
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74623
S13-0631-Rev. E, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
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