Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
l
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
DirectFET Power MOSFET
MX
MT
MP
DirectFET ISOMETRIC
SQ
SX
ST
MQ
MX
Description
The IRF8308MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the lowest on-
state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries
used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher
frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-
induced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Orderable part number
IRF8308MTRPbF
IRF8308MTR1PbF
Package Type
DirectFET Medium Can
DirectFET Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
8
Typical R DS (on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
VGS, Gate-to-Source Voltage (V)
30
±20
27
21
150
212
12
21
12
10
8
6
4
2
0
0
20
40
60
ID= 21A
VDS = 24V
VDS= 15V
A
mJ
A
ID = 27A
6
4
2
0
2.0
4.0
6.0
8.0
VGS, Gate-to-Source Voltage (V)
10.0
TJ = 125°C
TJ = 25°C
80
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 1.
Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
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