IRSM836-084MA
7A, 250V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM836-084MA is a 7A, 250V Integrated Power Module (IPM) designed for advanced appliance motor
drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high
performance AC motor-driver in an isolated package. This advanced IPM offers a combination of IR's low R
DS(on)
Trench MOSFET technology and the industry benchmark 3-phase high voltage, rugged driver in a small PQFN
package. At only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surface-
mount package makes it suitable for applications that are space-constrained. Integrated over-current protection,
fault reporting and under-voltage lockout functions deliver a high level of protection and fail-safe operation.
IRSM836-084MA functions without a heat sink.
Features
Integrated gate drivers and bootstrap functionality
Open-source for leg-shunt current sensing
Protection shutdown pin
Low R
DS(on)
Trench MOSFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Optimized dV/dt for loss and EMI trade offs
3.3V Schmitt-triggered active high input logic
Cross-conduction prevention logic
Motor power range up to ~150W, without heat sink
Isolation 1500VRMS min
IRSM836-084MA
Base Part Number
Package Type
36L
PQFN 12 x 12 mm
Standard Pack
Form
Tape and Reel
Tray
Quantity
2000
800
Orderable Part Number
IRSM836-084MATR
IRSM836-084MA
IRSM836-084MA
All part numbers are PbF
1
February 9, 2016
IRSM836-084MA
Internal Electrical Schematic
VB1 VB2 VB3
IRSM836-084MA
V+
VCC
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
FAULT
ITRIP
EN
RCIN
600V
3-Phase
Driver
HVIC
U, VS1
V, VS2
W, VS3
COM
VSS
VRU
VRV
VRW
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise stated in the table.
Symbol
BV
DSS
I
O
@ T=25°C
I
OP
P
d
@ T
C
=25°C
V
ISO
T
J
T
L
T
S
V
S1,2,3
V
B1,2,3
V
CC
Description
MOSFET Blocking Voltage
DC Output Current per MOSFET
Pulsed Output Current (Note 1)
Maximum Power Dissipation per MOSFET
Isolation Voltage (1min) (Note 2)
Operating Junction Temperature
Lead Temperature (Soldering, 30 seconds)
Storage Temperature
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply voltage
Min
---
---
---
---
---
-40
---
-40
V
B1,2,3
- 20
-0.3
-0.3
V
SS
-0.3
Max
250
7
27
40
1500
150
260
150
V
B1,2,3
+0.3
250
20
V
CC
+0.3
Unit
V
A
W
V
RMS
°C
°C
°C
V
V
V
V
V
IN
Input Voltage of LIN, HIN, I
TRIP
, EN, RCIN, FLT
Note 1: Pulse Width = 100µs, TC =25°C, Duty=1%.
Note 2: Characterized, not tested at manufacturing
2
February 9, 2016
IRSM836-084MA
Recommended Operating Conditions
Symbol
V+
V
S1,2,3
V
B1,2,3
V
CC
V
IN
F
p
Description
Positive DC Bus Input Voltage
High Side Floating Supply Offset Voltage
High Side Floating Supply Voltage
Low Side and Logic Supply Voltage
Input Voltage of LIN, HIN, I
TRIP
, EN, FLT
PWM Carrier Frequency
Min
---
(Note 3)
V
S
+10
11.5
0
---
Max
200
200
V
S
+20
18.5
5
20
Unit
V
V
V
V
V
kHz
The Input/Output logic diagram is shown in Figure 1. For proper operation the module should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at 15V
differential.
Note 3: Logic operational for V
s
from COM-5V to COM+250V. Logic state held for V
s
from COM-5V to COM-V
BS
.
Static Electrical Characteristics
(V
CC
-COM) = (V
B
-V
S
) = 15 V. T
A
= 25 C unless otherwise specified. The V
IN
and I
IN
parameters are referenced to V
SS
and are
applicable to all six channels. The V
CCUV
parameters are referenced to V
SS
. The V
BSUV
parameters are referenced to V
S
.
Symbol
BV
DSS
I
LKH
I
LKL
R
DS(ON)
V
SD
V
IN,th+
V
IN,th-
V
CCUV+,
V
BSUV+
V
CCUV-,
V
BSUV-
V
CCUVH,
V
BSUVH
I
QBS
I
QCC
I
IN+
I
IN-
I
TRIP+
I
TRIP-
V
IT, TH+
Description
Drain-to-Source Breakdown Voltage
Leakage Current of High Side FET’s in
Parallel
Leakage Current of Low Side FET’s in
Parallel Plus Gate Drive IC
Drain to Source ON Resistance
Mosfet Body Diode Forward Voltage
Positive Going Input Threshold
Negative Going Input Threshold
V
CC
and V
BS
Supply Under-Voltage,
Positive Going Threshold
V
CC
and V
BS
supply Under-Voltage,
Negative Going Threshold
V
CC
and V
BS
Supply Under-Voltage
Lock-Out Hysteresis
Quiescent V
BS
Supply Current V
IN
=0V
Quiescent V
CC
Supply Current V
IN
=0V
Input Bias Current V
IN
=4V
Input Bias Current V
IN
=0V
I
TRIP
Bias Current V
ITRIP
=4V
I
TRIP
Bias Current V
ITRIP
=0V
I
TRIP
Threshold Voltage
---
---
2.5
---
8
7.4
---
---
---
---
---
---
---
0.37
Min
250
Typ
---
0.5
1.5
0.31
0.8
---
---
8.9
8.2
0.7
---
---
100
--
5
--
0.46
0.45
---
---
0.8
9.8
9
---
125
3.35
180
1
40
1
0.55
Max
---
Units
V
µA
µA
Ω
V
V
V
V
V
V
µA
mA
µA
µA
µA
µA
V
Conditions
T
J
=25°C, I
LK
=250µA
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
DS
=250V
T
J
=25°C, V
CC
=15V,
I
D
=2A
T
J
=25°C, V
CC
=15V,
I
D
=2A
o
3
February 9, 2016
IRSM836-084MA
V
IT, TH-
V
IT, HYS
R
BR
V
RCIN,TH
R
ON,FLT
I
TRIP
Threshold Voltage
I
TRIP
Input Hysteresis
Internal Bootstrap Equivalent Resistor
Value
RCIN Positive Going Threshold
FLT Open-Drain Resistance
---
---
---
---
---
0.4
0.06
200
8
50
---
---
---
---
100
V
V
Ω
V
Ω
T
J
=25°C
Dynamic Electrical Characteristics
(V
CC
-COM) = (V
B
-V
S
) = 15 V. T
A
= 25 C unless otherwise specified.
Symbol
T
ON
T
OFF
T
FIL,IN
T
FIL,EN
T
BLT-ITRIP
T
FLT
T
EN
T
ITRIP
Description
Input to Output Propagation Turn-On
Delay Time
Input to Output Propagation Turn-Off
Delay Time
Input Filter Time (HIN, LIN)
Input Filter Time (EN)
I
TRIP
Blanking Time
Itrip to Fault
EN Falling to Switch Turn-Off
I
TRIP
to Switch Turn-Off Propagation
Delay
---
Min
---
---
200
100
100
---
Typ
0.7
0.7
330
200
330
600
700
950
1000
1000
1300
Max
1.5
1.5
---
---
Units
µs
I
D
=1mA, V+=50V
See Fig.2
µs
ns
ns
ns
ns
ns
ns
V
IN
=0 & V
IN
=4V
V
IN
=0 & V
IN
=4V
V
IN
=0 & V
IN
=4V, V
I/Trip
=5V
V
IN
=0 & V
IN
=4V
V
IN
=0 & V
IN
=4V
I
D
=1A, V+=50V, See Fig. 3
Conditions
o
MOSFET Avalanche Characteristics
Symbol
Description
Min
Typ
Max
Units
Conditions
EAS
Single Pulse Avalanche Energy
---
139
---
mJ
Note 4
Note 4: From characterization of TO-220 packaged devices. Starting T
J
=25°C, L=3mH, V
DD
=75V, I
AS
=10A
Thermal and Mechanical Characteristics
Symbol
R
th(J-CT)
R
th(J-CB)
Description
Total Thermal Resistance Junction to
Case Top
Total Thermal Resistance Junction to
Case Bottom
Min
---
---
Typ
21
2.9
Max
---
---
Units
°C/W
°C/W
Conditions
One device
One device
4
February 9, 2016
IRSM836-084MA
Qualification Information
†
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
Class 2
(per standard ESDA/JEDEC JS-001-2012)
Yes
Industrial
(per JEDEC JESD 47E)
MSL3
(per IPC/JEDEC J-STD-020C)
Class B
(per JEDEC standard JESD22-A115)
†††
††
RoHS Compliant
†
††
†††
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
Higher MSL ratings may be available for the specific package types listed here. Please contact your
International Rectifier sales representative for further information.
5
February 9, 2016
Linux开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
