NTTFS4H07N
Power MOSFET
25 V, 66 A, Single N−Channel,
m8−FL
Features
•
•
•
•
•
•
•
•
Optimized Design to Minimize Conduction and Switching Losses
Optimized Package to Minimize Parasitic Inductances
Optimized material for improved thermal performance
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
GS
4.5 V
10 V
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Applications
MAX R
DS(on)
7.1 mW
4.8 mW
TYP Q
GTOT
5.7 nC
12.4 nC
High Performance DC-DC Converters
System Voltage Rails
Netcom, Telecom
Servers & Point of Load
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current R
qJA
(T
A
= 25°C, Note 1)
Power Dissipation R
qJA
(T
A
= 25°C, Note 1)
Continuous Drain Current R
qJC
(T
C
= 25°C, Note 1)
Power Dissipation R
qJC
(T
C
= 25°C, Note 1)
Pulsed Drain Current (t
p
= 10
ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1)
(I
L
= 32 A
pk
, L = 0.1 mH) (Note 3)
Drain to Source dV/dt
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature Soldering Reflow (SMD
Styles Only), Pb-Free Versions (Note 2)
Symbol
V
DSS
V
GS
I
D
P
D
I
D
P
D
I
DM
E
AS
Value
25
±20
18.5
2.64
66
33.8
216
51
Units
V
V
A
W
A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
PIN CONNECTIONS
m8−FL
(3.3 x 3.3 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
W
A
mJ
G (4)
dV/dt
T
J(max)
T
STG
T
SLD
7
150
−55 to
150
260
V/ns
°C
°C
S (1,2,3)
D (5−8)
ORDERING INFORMATION
°C
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm
2
(or 1 in
2
) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at T
J
= 25°C,
V
GS
= 10 V, I
L
= 21 A, E
AS
= 22 mJ.
THERMALCHARACTERISTICS
Parameter
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
Symbol
R
qJA
R
qJC
Max
47.3
3.7
Units
°C/W
4. Thermal Resistance R
qJA
and R
qJC
as defined in JESD51−3.
©
Semiconductor Components Industries, LLC, 2015
1
July, 2015 − Rev. 3
Publication Order Number:
NTTFS4H07N/D
NTTFS4H07N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
25
15.5
1.0
10
100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS
= V
DS
, I
D
= 250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
1.1
3.7
2.1
V
mV/°C
V
GS
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
I
D
= 15 A
3.8
5.8
49
4.8
7.1
mW
S
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
g
FS
V
DS
= 12 V, I
D
= 15 A
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
R
G
V
GS
= 10 V, V
DS
= 12 V; I
D
= 30 A
T
A
= 25°C
V
GS
= 4.5 V, V
DS
= 12 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
771
525
34
5.7
2.9
2.5
1.26
12.4
1.0
2
nC
W
nC
pF
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 12 V, I
D
= 15 A,
R
G
= 3.0
W
7.6
32
11.7
2.13
ns
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 12 V,
I
D
= 15 A, R
G
= 3.0
W
5
28.3
14.5
1.65
ns
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
0.78
0.65
23.4
1.1
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
11.6
11.8
8
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4H07N
TYPICAL CHARACTERISTICS
70
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
T
J
= 25°C
2.5
3.0
70
V
GS
= 3.6 V
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V to 4 V
V
GS
= 3.4 V
V
GS
= 3.2 V
60
50
40
30
20
T
J
= 25°C
10
0
0
0.5
1.0
1.5
2.0
2.5
T
J
= −55°C
3.0
3.5
4.0
T
J
= 125°C
V
DS
= 5 V
3.8 V
V
GS
= 3.0 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.008
I
D
= 30 A
0.007
0.008
Figure 2. Transfer Characteristics
T = 25°C
0.007
0.006
0.005
0.004
0.003
0.002
V
GS
= 10 V
V
GS
= 4.5 V
0.006
0.005
0.004
0.003
3
4
5
6
V
GS
(V)
7
8
9
10
10
20
30
40
50
60
70
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
I
D
= 20 A
V
GS
= 10 V
1E−04
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
1E−05
I
DSS
, LEAKAGE (A)
1E−06
1E−07
1E−08
1E−09
1E−10
T
J
= 85°C
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
−25
0
25
50
75
100
125
150
5
10
15
20
25
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS4H07N
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
0
0
5
10
C
rss
15
20
25
C
iss
C
oss
T
J
= 25°C
V
GS
= 0 V
Q
T
8
6
Q
gs
Q
gd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 12.0 V
I
D
= 30 A
0
2
4
6
8
10
12
14
4
2
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t, TIME (ns)
100
t
d(off)
t
r
t
f
10
t
d(on)
20
18
16
14
12
10
8
6
4
2
0
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 125°C
T
J
= 25°C
1
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
22
20
18
16
14
12
10
8
6
4
2
0
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
50
ms
10
100
ms
1 ms
0 V < V
GS
< 10 V
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
10 ms
dc
I
D
= 21 A
1
0.1
0.01
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTTFS4H07N
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PCB Cu Area 650 mm
2
PCB Cu thk 1 oz
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
80
70
60
GFS (S)
50
40
30
20
10
0
0
10
20
30
I
D
(A)
40
50
60
1
0.0000001 0.000001
0.00001
0.0001
0.001
PULSE WIDTH (sec)
I
D
, DRAIN CURRENT (A)
1000
100
10
Figure 14. GFS vs. I
D
Figure 15. Avalanche Characteristics
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