e. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71693
S10-2426-Rev. A, 25-Oct-10
www.vishay.com
1
New Product
SiS478DN
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
=
8
A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
0.8
13
5
7
6
T
C
= 25 °C
12
40
1.2
26
10
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 2.1
I
D
7 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 2.1
I
D
7 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
0.5
V
DS
= 15 V, V
GS
= 10 V, I
D
=
8.4
A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
=
8.4
A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
398
104
58
7
3.6
1.1
1.4
2.4
12
12
10
9
7
9
12
8
4.8
24
24
20
18
14
18
24
16
ns
10.5
5.5
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
½10
V, I
D
=
8
A
V
GS
½4.5
V, I
D
= 5 A
V
DS
= 10 V, I
D
=
8
A
20
0.016
0.024
20
0.020
0.030
1.2
30
30
-6
2.5
± 100
1
5
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 71693
S10-2426-Rev. A, 25-Oct-10
New Product
SiS478DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 5 V
I
D
- Drain Current (A)
40
32
I
D
- Drain Current (A)
32
V
GS
= 4 V
24
24
16
16
T
C
= 25 °C
8
T
C
= 125 °C
8
V
GS
= 3 V
V
GS
= 2 V, 1 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
T
C
= - 55 °C
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
10
0.05
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
8
I
D
- Drain Current (A)
0.04
6
0.03
V
GS
= 4.5 V
4
T
C
= 25 °C
2
T
C
= 125 °C
0
0
1
2
T
C
= - 55 °C
3
4
5
0.02
V
GS
= 10 V
0.01
0
8
16
24
32
40
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
550
10
On-Resistance vs. Drain Current
I
D
= 8.4 A
V
GS
- Gate-to-Source Voltage (V)
440
C - Capacitance (pF)
C
iss
8
V
DS
= 10 V
6
V
DS
= 20 V
V
DS
= 15 V
4
330
220
C
oss
110
C
rss
0
0
5
10
15
20
25
30
2
0
0
1.6
3.2
4.8
6.4
8.0
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 71693
S10-2426-Rev. A, 25-Oct-10
www.vishay.com
3
New Product
SiS478DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.0
I
D
= 8 A
1.7
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
100
10
V
GS
= 10 V
T
J
= 150 °C
1
(Normalized)
1.4
V
GS
= 4.5 V
1.1
0.1
T
J
= 25 °C
0.01
0.8
0.5
- 50
0.001
- 25
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.10
I
D
= 8 A
R
DS(on)
- On-Resistance (Ω)
Source-Drain Diode Forward Voltage
0.4
0.08
V
GS(th)
Variance (V)
0.2
0
0.06
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 μA
0.04
T
J
= 125 °C
0.02
T
J
= 25 °C
0
0
1
2
3
4
5
6
7
8
9
10
- 0.6
- 0.8
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
50
100
Threshold Voltage
40
10
30
I
D
- Drain Current (A)
Limited by R
DS(on)
*
Power (W)
1 ms
1
10 ms
100 ms
0.1
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
DC
20
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
0.1
1
10
100
Single Pulse Power
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 71693
S10-2426-Rev. A, 25-Oct-10
New Product
SiS478DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
20
I
D
- Drain Current (A)
15
Package Limited
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
20
2.0
16
1.6
Power (W)
8
Power (W)
12
1.2
0.8
4
0.4
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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