RN2101∼RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2101, RN2102, RN2103
RN2104, RN2105, RN2106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1101 to RN1106
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
SSM
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2101 to 2106
RN2101 to 2106
RN2101 to 2104
RN2105, 2106
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−10
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1990-12
1
2014-03-01
FPGA/CPLD
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