PD - 97194A
IRF7902PbF
HEXFET
®
Power MOSFET
Applications
l
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
Improved Body Diode Reverse Recovery
l
Lead-Free
V
DSS
30V
Q1 22.6m
:
@V
GS
= 10V
Q2 14.4m
:
@V
GS
= 10V
9
T ÃÃ9!
T ÃÃ9!
T ÃÃ9!
R
DS(on)
max
I
D
6.4A
9.7A
B
T!
T!
B!
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q1 Max.
30
± 20
6.4
5.1
51
1.4
0.9
0.011
Q2 Max.
Units
V
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
9.7
7.8
78
2.0
1.3
0.016
-55 to + 150
A
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
Q1 Max.
20
90
Q2 Max.
20
62.5
Units
°C/W
www.irf.com
1
07/10/06
IRF7902PbF
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
∆ΒV
DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
13
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.023
0.025
18.1
23.8
11.5
14.9
1.8
-4.7
-5.9
–––
–––
–––
–––
–––
–––
4.6
6.5
0.9
1.4
0.5
0.8
1.8
2.3
1.4
2.0
2.3
3.1
3.0
4.4
3.1
3.1
7.4
6.1
8.2
8.6
8.4
8.2
3.4
3.3
580
900
130
190
74
86
Max.
–––
–––
–––
22.6
29.7
14.4
18.7
2.25
–––
–––
1.0
150
100
-100
–––
–––
6.9
9.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
4.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
7.8
12
1.5
3.1
Max.
1.7
2.5
51
78
1.0
1.0
12
18
2.3
4.7
Conditions
Units
V
GS
= 0V, I
D
= 250µA
V
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 6.4A
V
GS
= 4.5V, I
D
= 5.1A
V
GS
= 10V, I
D
= 9.7A
V
GS
= 4.5V, I
D
= 7.8A
V
DS
= V
GS
, I
D
= 25µA
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
e
e
e
e
V
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 5.1A
V
DS
= 15V, I
D
= 7.8A
nC
Q1
V
DS
= 15V
V
GS
= 4.5V, I
D
= 5.1A
Q2
V
DS
= 15V
V
GS
= 4.5V, I
D
= 7.8A
nC
V
DS
= 16V, V
GS
= 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ω
Q1
V
DD
= 15V, V
GS
= 4.5V
I
D
= 5.1A
ns
Q2
V
DD
= 15V, V
GS
= 4.5V
I
D
= 7.8A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Q1 Max.
3.4
5.1
Q2 Max.
7.3
7.8
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.1A, V
GS
= 0V
V
T
J
= 25°C, I
S
= 7.8A, V
GS
= 0V
ns Q1 T
J
= 25°C, I
F
= 5.1A,
V
DD
= 15V, di/dt = 100A/µs
nC Q2 T
J
= 25°C, I
F
= 7.8A,
V
DD
= 15V, di/dt = 100A/µs
Ã
Reverse Recovery Time
Reverse Recovery Charge
e
e
e
e
2
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Typical Characteristics
Q1 - Control FET
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
IRF7902PbF
Q2 - Synchronous FET
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
2.5V
0.1
2.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
Fig 2.
Typical Output Characteristics
100
TOP
VGS
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
1
2.5V
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
100
Fig 4.
Typical Output Characteristics
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
TJ = 150°C
10
T J = 150°C
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.1
1
2
3
4
5
6
0.1
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Transfer Characteristics
www.irf.com
3
IRF7902PbF
Q1 - Control FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = C ds + Cgd
Typical Characteristics
Q2 - Synchronous FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = C ds + Cgd
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
C, Capacitance (pF)
1000
Ciss
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
6.0
ID= 5.1A
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
6.0
ID= 7.8A
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 24V
VDS= 15V
VDS= 6.0V
5.0
4.0
3.0
2.0
1.0
0.0
0
1
2
3
4
5
6
QG, Total Gate Charge (nC)
VDS= 24V
VDS= 15V
VDS= 6.0V
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge (nC)
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
Fig 10.
Typical Gate Charge vs. Gate-to-Source
Voltage
1000
ID, Drain-to-Source Current (A)
100
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
1
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
100µsec
0.1
0.01
T A = 25°C
Tj = 150°C
Single Pulse
0
1
1msec
10msec
100msec
0.1
0.01
T A = 25°C
Tj = 150°C
Single Pulse
0
1
1msec
10msec
100msec
0.001
10
100
VDS, Drain-to-Source Voltage (V)
0.001
10
100
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
Fig 12.
Maximum Safe Operating Area
4
www.irf.com
Typical Characteristics
Q1 - Control FET
RDS(on) , Drain-to-Source On Resistance
(Normalized)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
IRF7902PbF
Q2 - Synchronous FET
2.0
ID = 9.7A
VGS = 10V
2.0
ID = 6.4A
VGS = 10V
1.5
1.5
1.0
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 13.
Normalized On-Resistance vs. Temperature
100
Fig 14.
Normalized On-Resistance vs. Temperature
100
ISD, Reverse Drain Current (A)
ISD, Reverse Drain Current (A)
T J = 150°C
10
T J = 25°C
T J = 150°C
10
T J = 25°C
1
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
RDS(on), Drain-to -Source On Resistance (m
Ω)
60
ID = 6.4A
50
Fig 16.
Typical Source-Drain Diode Forward Voltage
RDS(on), Drain-to -Source On Resistance (m
Ω)
40
ID = 9.7A
30
40
20
T J = 125°C
30
T J = 125°C
10
20
T J = 25°C
10
2
4
6
8
10
12
14
16
T J = 25°C
0
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
VGS, Gate -to -Source Voltage (V)
Fig 17.
Typical On-Resistance vs.Gate Voltage
Fig 18.
Typical On-Resistance vs.Gate Voltage
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5
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