NTMFS5832NL
Power MOSFET
40 V, 111 A, 4.2 mW
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
Steady
State
T
A
= 70°C
T
C
= 25°C
T
C
= 70°C
T
C
= 25°C
T
C
= 70°C
t
p
= 10
ms
I
DM
T
J
, T
STG
I
S
EAS
IAS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
±20
20
16
3.1
1.9
111
89
96
61
443
−55
to
+150
111
134
52
260
A
°C
A
mJ
A
°C
W
A
W
Unit
V
V
A
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V
(BR)DSS
40 V
R
DS(ON)
MAX
4.2 mW @ 10 V
6.5 mW @ 4.5 V
D (5)
I
D
MAX
111 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
5832NL
AYWZZ
D
D
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain) (Note 1)
Junction−to−Ambient Steady State
(Note 1)
Junction−to−Ambient Steady State
(Note 2)
Symbol
R
qJC
R
qJA
R
qJA
Value
1.3
40
°C/W
75
Unit
ORDERING INFORMATION
Device
NTMFS5832NLT1G
Package
Shipping
†
DFN5
1500/Tape & Reel
(Pb−Free)
1. Surface−mounted on FR4 board using 1 sq−in pad
(Cu area = 1.127 in sq [2 oz] inclusing traces).
2. Surface−mounted on FR4 board using 0.155 in sq (100mm
2
) pad size.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. 1
1
Publication Order Number:
NTMFS5832NL/D
NTMFS5832NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 10 A, R
G
= 1.0
W
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 10 A, R
G
= 1.0
W
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A
V
GS
= 4.5 V, V
DS
= 20 V; I
D
= 20 A
V
GS
= 10 V, V
DS
= 20 V; I
D
= 20 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 5 A
0.73
0.57
28.6
14
14.5
23.4
nC
ns
1.2
V
13
24
27
8.0
10
18
32
5.0
ns
ns
2700
360
250
25
51
2.0
8.0
12.7
3.2
1.2
V
W
nC
pF
I
D
= 20 A
I
D
= 20 A
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
34.2
1
100
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.0
6.4
3.1
5.0
21
3.0
V
mV/°C
4.2
6.5
mW
S
V
DS
= 15 V, I
D
= 20 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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NTMFS5832NL
TYPICAL CHARACTERISTICS
200
I
D
, DRAIN CURRENT (A)
10 V
5.0 V
T
J
= 25°C
4.5 V
I
D
, DRAIN CURRENT (A)
200
V
DS
≥
10 V
150
4.0 V
100
3.5 V
50
3.0 V
0
0
1
2
3
4
5
150
100
T
J
= 25°C
50
T
J
= 125°C
0
2
3
T
J
=
−55°C
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
I
D
= 20 A
T
J
= 25°C
0.015
0.007
Figure 2. Transfer Characteristics
T
J
= 25°C
0.006
V
GS
= 4.5 V
0.005
0.004
V
GS
= 10 V
0.003
0.002
10
0.010
0.005
0.000
0
1
2
3
4
5
6
7
8
9
10
20
30
40
50
60
70
80
90
100 110
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
100
V
GS
= 10 V
I
D
= 20 A
I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
10
20
30
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTMFS5832NL
TYPICAL CHARACTERISTICS
4000
3500
C, CAPACITANCE (pF)
3000
2500
2000
1500
1000
500
0
C
rss
0
10
20
30
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
V
DS
6
4
2
0
0
I
D
= 20 A
T
J
= 25°C
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
Q
gs
Q
gd
V
GS
90
80
70
60
50
40
30
20
10
0
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
T
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 20 V
I
D
= 20 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
d(off)
t
r
10
t
f
t
d(on)
80
60
40
20
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100
10
1
0.1
0.01
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
140
120
100
80
60
40
20
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 53 A
I
D
, DRAIN CURRENT (A)
10
ms
100
ms
1 ms
10 ms
dc
100
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NTMFS5832NL
TYPICAL CHARACTERISTICS
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1 0.05
0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
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