IR25601SPBF
Half-Bridge Driver
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Internally set dead-time (100ns)
Output in phase with input
Matched propagation delay for both channels
Lower di/dt gate driver for better noise immunity
Product Summary
V
OFFSET
I
O+/-
V
OUT
Delay Matching
Ton/off (typ.)
Internal Dead time
600V max.
60 mA / 130 mA
10 – 20V
50ns
220 & 220 ns
100 ns
Description
The IR25601 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side
referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output
driver features a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
Package Options
8 Lead SOIC
Ordering Information
Standard Pack
Package Type
SO8N
SO8N
Form
Tube
Tape and Reel
Quantity
95
2500
Base Part Number
IR25601SPBF
IR25601SPBF
Orderable Part Number
IR25601SPBF
IR25601STRPBF
1
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© 2013 International Rectifier
March 26, 2013
IR25601SPBF
Typical Connection Diagram
2
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© 2013 International Rectifier
March 26, 2013
IR25601SPBF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
dVs/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient
Package power dissipation @ T
A
≤ +25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
—
—
—
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
25
V
CC
+ 0.3
V
CC
+ 0.3
50
0.625
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The V
S
offset rating is tested
with all supplies biased at 15V differential.
Symbol
V
B
V
S
V
HO
V
CC
V
LO
V
IN
T
A
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage (HIN, LIN)
Ambient temperature
Min.
V
S
+ 10
†
V
S
10
0
0
-40
Max.
V
S
+ 20
600
V
B
20
V
CC
V
CC
125
V
Units
°C
†
Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to Design Tip DT97-3 for more
details).
3
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© 2013 International Rectifier
March 26, 2013
IR25601SPBF
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, CL = 1000 pF and T
A
= 25°C unless otherwise specified.
Symbol
t
on
t
off
t
r
t
f
DT
MT
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Dead time
Delay matching, HS & LS turn-on/off
Min.
120
130
60
20
80
—
Typ.
220
220
200
100
100
—
Max.
320
330
300
170
190
50
ns
Units
Test Conditions
V
S
= 0V
V
S
= 0Vor 600V
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are
referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the respective
output leads: HO and LO.
Symbol
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
I
IN-
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
I
O-
Definition
Logic ―1‖ input voltage
Logic ―0‖ input voltage
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic ―1‖ input bias current
Logic ―0‖ input bias current
V
CC
and V
BS
supply undervoltage
positive going threshold
V
CC
supply undervoltage negative
going threshold
V
CC
supply undervoltage lockout
hysteresis
Output high short circuit pulsed
current
Output low short circuit pulsed
current
Min.
2.3
—
—
—
—
20
50
—
—
8
7.4
0.3
60
130
Typ.
—
—
—
—
—
60
120
5
1.0
8.9
8.2
0.7
—
—
Max.
—
0.8
2.8
1.2
50
150
240
40
2.0
9.8
9
—
—
—
mA
V
O
= 0V
PW ≤ 10 μs
V
O
= 15V
PW ≤ 10 μs
V
Units
Test Conditions
V
Io = 20mA
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
V
IN
= 5V
V
IN
= 0V
μA
4
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© 2013 International Rectifier
March 26, 2013
IR25601SPBF
Functional Block Diagram
5
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© 2013 International Rectifier
March 26, 2013
stm32/stm8
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