SiA438EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
20
± 12
6
a
6
a
5.7
b, c
4.5
b, c
15
6
a
1.75
b, c
11.4
7.3
2.4
b, c
1.5
b, c
- 55 to 150
260
Unit
V
A
P
D
T
J
, T
stg
W
°C
THERMAL RESISTANCE RATINGS
Parameter
t
≤
5s
Maximum Junction-to-Ambient
b, f
°C/W
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typical
41
9
Maximum
52
11
Unit
New Product
SiA438EDJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5.1 A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 4.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 4.1 A, V
GS
=
0 V
0.8
15
8
8
7
T
C
= 25 °C
6
15
1.2
30
20
A
V
ns
nC
ns
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 2.4
Ω
I
D
≅
4.1 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 2.4
Ω
I
D
≅
4.1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.1 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
=
4.5 V, I
D
= 3.9 A
V
GS
=
2.5 V, I
D
= 3.3 A
V
DS
= 10 V, I
D
= 3.9 A
10
0.037
0.051
14
0.046
0.063
0.6
20
23
- 3.3
1.4
± 70
±1
-1
- 10
A
Ω
S
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
350
63
37
7.5
3.5
0.95
0.75
3.5
10
12
18
12
5
12
15
10
15
20
30
20
10
20
25
15
ns
Ω
12
5.5
nC
pF
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
4.00
10
-1
10
-2
10
-3
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
3.00
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
10
-10
T
J
= 150 °C
T
J
= 25 °C
2.00
I
GSS
at 25 °C
1.00
0.00
0
3
6
9
12
15
10
-11
0
3
6
9
12
15
V
GS
- Gate-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Gate Current vs. Gate-Source Voltage
15
V
GS
= 5 thru 3
V
V
GS
= 2.5
V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
T
C
= - 55 °C
3
9
6
V
GS
= 2
V
3
V
GS
= 1.5
V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2
T
C
= 25 °C
1
T
C
= 125 °C
0
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.12
500
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
400
0.09
C - Capacitance (pF)
300
C
iss
V
GS
= 2.5
V
0.06
V
GS
= 4.5
V
0.03
200
C
oss
100
C
rss
0.00
0
3
6
9
12
15
0
0
2
4
6
8
10
12
14
16
18
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
www.vishay.com
3
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 5.1 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
V
DS
= 10
V
6
V
DS
= 16
V
4
1.5
1.7
I
D
= 3.9 A
1.3
(Normalized)
V
GS
= 4.5
V,
2.5
V
1.1
0.9
2
0.7
0
0
2
4
6
8
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.20
On-Resistance vs. Junction Temperature
I
D
= 2 A
R
DS(on)
- On-Resistance (Ω)
0.16
I
S
- Source Current (A)
10
0.12
T
J
= 150 °C
1
T
J
= 25 °C
0.08
T
J
= 125 °C
0.04
T
J
= 25 °C
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.3
1.2
1.1
V
GS(th)
(V)
1.0
0.9
0.8
0.7
0.6
- 50
5
I
D
= 250
µA
20
Power (W)
On-Resistance vs. Gate-to-Source Voltage
30
25
15
10
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
www.vishay.com
4
Document Number: 69092
S09-0224-Rev. B, 09-Feb-09
New Product
SiA438EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
Limited
by
R
DS(on)
*
I
D
- Drain Current (A)
10
100
µs
1 ms
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1 s, 10 s
DC
1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
15
12
12
I
D
- Drain Current (A)
Power Dissipation (W)
9
9
Package Limited
6
6
3
3
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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