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BF246B_J35Z: 产品描述JFET N-CHNL FET SWITCH; 产品类别半导体分立半导体; 文件大小97KB，共3页; 制造商Fairchild; 官网地址http://www.fairchildsemi.com/

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BF246B_J35Z概述

JFET N-CHNL FET SWITCH

BF246B_J35Z规格参数

参数名称	属性值
产品种类 Product Category	JFET
制造商 Manufacturer	Fairchild
RoHS	Details
安装风格 Mounting Style	Through Hole
封装 / 箱体 Package / Case	TO-92
Transistor Polarity	N-Channel
Configuration	Single
Vgs - Gate-Source Breakdown Voltage	- 25 V
系列 Packaging	Bulk
工厂包装数量 Factory Pack Quantity	2000
单位重量 Unit Weight	0.007090 oz

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BF246B N-Channel Switch

BF246B

N-Channel Switch

• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.

• Sourced from process 51.

• See J111 for characteristics.

TO-92

DGS

1. Drain 2. Gate 3. Source

Absolute Maximum Ratings*

Symbol

, T

STG

Notes:

= 25°C unless otherwise noted

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Value

-25

-55 ~ 150

Units

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired.

1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

Symbol

Off Characteristics

(BR)GSS

GSS

GS(off)

DSS

= 25°C unless otherwise noted

Parameter

Gate-Source Breakdown Voltage

Gate Reverse Current

Gate-Source Cutoff Voltage

Zero-Gate Voltage Drain Current *

Conditions

= 1.0µA, V

= 0

= -15V, V

= 0

= 15V, I

= 10nA

= 15V, V

= 0

Min.

-25

Max

Units

-5.0

-0.6

-14.5

140

On Characteristics*

Thermal Characteristics

Symbol

θJC

θJA

Total Device Dissipation

= 25°C unless otherwise noted

Parameter

Value

625

5.0

125

357

Units

mW/°C

°C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

www.fairchildsemi.com

BF246B Rev. A

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