SUD45P03-15
Siliconix
P-Channel 30-V (D-S), 150_C MOSFET
Product Summary
V
DS
(V)
–30
30
r
DS(on)
(W)
0.015 @ V
GS
= –10 V
0.024 @ V
GS
= –4.5 V
I
D
(A)
a
"13
"8
S
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD45P03-15
D
P-Channel MOSFET
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
"13
"8
"100
–13
70
4
a
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
b
Maximum Junction-to-Case
Symbol
R
thJA
R
thJC
Typical
Maximum
30
1.8
Unit
_C/W
Notes
a. Calculated Rating for T
A
= 25
_
C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings
and Typical Characteristics).
b. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70267.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-51
SUD45P03-15
Siliconix
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –5 V, V
GS
= –10 V
V
DS
= –5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= –13 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= –10 V, I
D
= –13 A, T
J
= 125_C
V
GS
= –4.5 V, I
D
= –13 A
Forward Transconductance
b
g
fs
V
DS
= –15 V, I
D
= –13 A
20
–50
–20
0.012
0.018
0.020
0.015
0.026
0.024
S
W
A
–30
V
–1.0
"100
–1
–50
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State
On State Drain Current
b
I
D( )
D(on)
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –15 V, R
L
= 0.33
W
I
D
^
–45 A, V
GEN
= –10 V, R
G
= 2.4
W
V
DS
= –15 V, V
GS
= –10 V, I
D
= –45 A
V
GS
= 0 V, V
DS
= –25 V, F = 1 MHz
3200
800
280
50
14
6.2
13
10
50
20
20
20
100
40
ns
125
nC
pF
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= –45 A, V
GS
= 0 V
I
F
= –45 A, di/dt = 100 A/ms
1.0
55
100
1.5
100
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-52
SUD45P03-15
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
100
V
GS
= 10, 9, 8 V
80
I
D
– Drain Current (A)
60
40
20
3V
0
2V
0
2
4
6
8
10
0
5V
I
D
– Drain Current (A)
Output Characteristics
7V
6V
80
Transfer Characteristics
T
C
= –55_C
60
25_C
125_C
40
4V
20
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
50
40
g
fs
– Transconductance (S)
30
20
10
0
V
GS
– Gate-to-Source Voltage (V)
0.05
0.04
V
GS
= 4.5 V
0.03
0.02
V
GS
= 10 V
0.01
0
Transconductance
T
C
= –55_C
25_C
r
DS(on)
– On-Resistance (
W
)
On-Resistance vs. Drain Current
125_C
0
10
20
30
40
50
60
0
20
40
60
80
100
I
D
– Drain Current (A)
4500
3600
C – Capacitance (pF)
2700
1800
900
0
C
rss
C
oss
I
D
– Drain Current (A)
10
V
GS
– Gate-to-Source Voltage (V)
8
6
4
2
0
V
DS
= 15 V
I
D
= 45 A
Capacitance
Gate Charge
C
iss
0
5
10
15
20
25
30
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-53
SUD45P03-15
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
2.0
1.6
1.2
0.8
0.4
0
-50 -25
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 45 A
I
S
– Source Current (A)
Source-Drain Diode Forward Voltage
r
DS(on)
– On-Resistance (
W
)
(Normalized)
T
J
= 150_C
T
J
= 25_C
10
0
25
50
75
100
125
150
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
– Source-to-Drain Voltage (V)
T
J
– Junction Temperature (_C)
Thermal Ratings
20
16
I
D
– Drain Current (A)
12
8
4
0
I
D
– Drain Current (A)
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
500
100
Limited
by r
DS(on)
10, 100
ms
10
1 ms
10 ms
1
T
A
= 25_C
Single Pulse
0.1
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
100 ms
1s
dc
0
25
50
75
100
125
150
T
A
– Ambient Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
30
Square Wave Pulse Duration (sec)
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054
S
Phone (408)988-8000
S
FaxBack (408)970-5600
S
www.siliconix.com
S-57253—Rev. F, 24-Feb-98
Siliconix was formerly a division of TEMIC Semiconductors
1-54
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
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