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CY7C1311KV18-250BZC

产品描述SRAM 18Mb 250Mhz 1.8V 2M x 8 QDR II SRAM
产品类别存储    存储   
文件大小623KB,共33页
制造商Cypress(赛普拉斯)
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CY7C1311KV18-250BZC概述

SRAM 18Mb 250Mhz 1.8V 2M x 8 QDR II SRAM

CY7C1311KV18-250BZC规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
包装说明LBGA, BGA165,11X15,40
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Factory Lead Time1 week
最长访问时间0.45 ns
其他特性BURST ARCHITECTURE
最大时钟频率 (fCLK)250 MHz
I/O 类型SEPARATE
JESD-30 代码R-PBGA-B165
JESD-609代码e0
长度15 mm
内存密度16777216 bit
内存集成电路类型QDR SRAM
内存宽度8
湿度敏感等级3
功能数量1
端子数量165
字数2097152 words
字数代码2000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织2MX8
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装等效代码BGA165,11X15,40
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)235
电源1.5/1.8,1.8 V
认证状态Not Qualified
座面最大高度1.4 mm
最大待机电流0.25 A
最小待机电流1.7 V
最大压摆率0.43 mA
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间20
宽度13 mm
Base Number Matches1

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18-Mbit QDR II SRAM
Four-Word Burst Architecture
18-Mbit QDR
®
II SRAM Four-Word Burst Architecture
CY7C1311KV18/CY7C1911KV18
CY7C1313KV18/CY7C1315KV18
®
Features
Configurations
CY7C1311KV18 – 2M × 8
CY7C1911KV18 – 2M × 9
CY7C1313KV18 – 1M × 18
CY7C1315KV18 – 512K × 36
Separate independent read and write data ports
Supports concurrent transactions
333-MHz clock for high bandwidth
Four-word burst for reducing address bus frequency
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Two Input Clocks for Output Data (C and C) to minimize Clock
skew and flight time mismatches
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR
®
II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
Available in × 8, × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V (±0.1 V); I/O V
DDQ
= 1.4 V to V
DD
Supports both 1.5 V and 1.8 V I/O supply
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL output buffers
JTAG 1149.1 compatible test access port
PLL for accurate data placement
Functional Description
The CY7C1311KV18, CY7C1911KV18, CY7C1313KV18, and
CY7C1315KV18 are 1.8 V Synchronous Pipelined SRAMs,
equipped with QDR II architecture. QDR II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR II architecture has
separate data inputs and data outputs to completely eliminate
the need to ‘turnaround’ the data bus that exists with common
I/O devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR II read and write ports are independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1311KV18), 9-bit words
(CY7C1911KV18), 18-bit words (CY7C1313KV18), or 36-bit
words (CY7C1315KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus ‘turnarounds’.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
For a complete list of related documentation, click
here.
Selection Guide
Description
Maximum operating frequency
Maximum operating current
×8
×9
× 18
× 36
333 MHz
333
520
530
730
300 MHz
300
490
500
670
250 MHz
250
430
430
440
590
Unit
MHz
mA
Not Offered Not Offered
Cypress Semiconductor Corporation
Document Number: 001-58904 Rev. *K
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 1, 2017

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