VS-HFA15TB60PbF, VS-HFA15TB60-N3
www.vishay.com
Vishay Semiconductors
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified
JEDEC
®
-JESD47
TO-220AC
Base
cathode
2
according
to
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Cathode
3
Anode
DESCRIPTION
VS-HFA15TB60... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A continuous current, the
VS-HFA15TB60... is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-220AC
15 A
600 V
1.2 V
23 ns
150 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
15
150
60
74
29
-55 to +150
W
°C
A
UNITS
V
Revision: 10-Jul-15
Document Number: 94053
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA15TB60PbF, VS-HFA15TB60-N3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
I
R
= 100 μA
I
F
= 15 A
Maximum forward voltage
V
FM
I
F
= 30 A
I
F
= 15 A, T
J
= 125 °C
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125 °C, V
R
= 0.8 x V
R
rated
V
R
= 200 V
See fig. 2
See fig. 3
See fig. 1
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.3
1.5
1.2
1.0
400
25
8.0
MAX.
-
1.7
2.0
1.6
10
1000
50
-
μA
pF
nH
V
UNITS
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
SYMBOL
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
/dt1
dI
(rec)M
/dt2
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
MIN.
-
-
-
-
-
-
-
-
-
TYP.
19
42
74
4.0
6.5
84
241
188
160
MAX.
-
60
120
6.0
10
180
600
-
A/μs
-
A
ns
UNITS
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Weight
Mounting torque
Marking device
Case style TO-220AC
SYMBOL
T
lead
R
thJC
R
thJA
Typical socket mount
TEST CONDITIONS
0.063" from case (1.6 mm) for 10 s
MIN.
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
2.0
0.07
-
MAX.
300
1.7
K/W
80
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
HFA15TB60
Revision: 10-Jul-15
Document Number: 94053
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA15TB60PbF, VS-HFA15TB60-N3
www.vishay.com
Vishay Semiconductors
10 000
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (µA)
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 25 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Response
1
P
DM
t
1
0.1
Single pulse
(thermal response)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 10-Jul-15
Document Number: 94053
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA15TB60PbF, VS-HFA15TB60-N3
www.vishay.com
Vishay Semiconductors
800
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
700
600
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
100
80
t
rr
(ns)
60
Q
rr
(nC)
500
400
300
200
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
40
20
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
100
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
25
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
10 000
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
20
15
10
I
F
= 30 A
I
F
= 15 A
I
F
= 5 A
dI
(rec)M
/dt (A/µs)
I
rr
(A)
1000
5
0
100
1000
100
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
dI
F
/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical dI
(rec)M
/dt vs. dI
F
/dt
Revision: 10-Jul-15
Document Number: 94053
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-HFA15TB60PbF, VS-HFA15TB60-N3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
Document Number: 94053
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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