PD - 95539A
Features
l
l
l
l
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IRLZ44ZPbF
IRLZ44ZSPbF
IRLZ44ZLPbF
HEXFET
®
Power MOSFET
D
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 55V
R
DS(on)
= 13.5mΩ
G
S
Description
I
D
= 51A
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
TO-220AB
IRLZ44ZPbF
D
2
Pak
IRLZ44ZSPbF
Max.
51
36
204
80
TO-262
IRLZ44ZLPbF
Units
A
W
W/°C
V
mJ
A
mJ
°C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
d
Ã
h
g
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
R
θJA
i
y
y
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
k
Parameter
Typ.
Max.
1.87
–––
62
40
Units
°C/W
ik
ik
–––
0.50
–––
–––
jk
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1
10/01/10
IRLZ44Z/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.05
11
–––
–––
–––
–––
–––
–––
–––
–––
24
7.5
12
14
160
25
42
4.5
7.5
1620
230
130
860
180
280
–––
–––
13.5
20
22.5
3.0
–––
20
250
200
-200
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
mΩ
mΩ
mΩ
V
V
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
V
GS
= 5.0V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 31A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 31A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 50V
I
D
= 31A
R
G
= 7.5
Ω
V
GS
= 5.0V
D
Between lead,
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
e
e
e
nC
e
e
ns
nH
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
21
16
51
A
204
1.3
32
24
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
2
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IRLZ44Z/S/LPbF
1000
TOP
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
15V
10V
8.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
3.0V
≤
60µs PULSE WIDTH
Tj = 25°C
3.0V
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
60
T J = 25°C
T J = 175°C
100.0
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
T J = 175°C
40
T J = 25°C
20
10.0
VDS = 20V
≤
60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VDS = 10V
380µs PULSE WIDTH
0
0
10
20
30
40
50
ID, Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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IRLZ44Z/S/LPbF
2500
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
VGS, Gate-to-Source Voltage (V)
ID= 31A
VDS= 44V
VDS= 28V
VDS= 11V
2000
10
8
6
4
2
0
C, Capacitance (pF)
Ciss
1500
1000
500
Coss
Crss
1
10
100
0
0
10
20
30
40
50
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
100
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLZ44Z/S/LPbF
60
2.5
50
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 30A
VGS = 5.0V
2.0
ID , Drain Current (A)
40
30
1.5
20
1.0
10
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
τ
1
τ
2
Ri (°C/W)
τi
(sec)
0.736
0.000345
0.687
0.00147
0.449
0.007058
0.01
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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