NTQD6968N
Power MOSFET
7.0 A, 20 V, Common Drain,
Dual N−Channel, TSSOP−8
Features
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V
(BR)DSS
20 V
R
DS(on)
TYP
17 mW @ 4.5 V
I
D
MAX
7.0 A
•
•
•
•
•
•
•
Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
3 mm Wide TSSOP−8 Surface Mount Package
High Speed, Soft Recovery Diode
TSSOP−8 Mounting Information Provided
Pb−Free Package is Available
N−Channel
D
N−Channel
D
Applications
•
Battery Protection Circuits
G1
G2
S1
S2
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T
A
25°C (Note 1)
− Continuous @ T
A
70°C (Note 1)
− Pulsed (Note 3)
Total Power Dissipation @ T
A
25°C (Note 1)
Drain Current
− Continuous @ T
A
25°C (Note 2)
− Continuous @ T
A
70°C (Note 2)
− Pulsed (Note 3)
Total Power Dissipation @ T
A
25°C (Note 2)
Operating and Storage Temperature Range
Thermal Resistance −
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Pur-
poses for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
D
I
DM
P
D
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
qJA
Value
20
"12
7.0
5.6
20
1.81
6.2
4.9
18
1.39
−55 to
+150
69
90
260
°C
W
°C
°C/W
W
Adc
Unit
Vdc
Vdc
Adc
8
1
TSSOP−8
CASE 948S
PLASTIC
1
D S1 S1 G1
E68
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
E68
YWW
A
G
MARKING DIAGRAM &
PIN ASSIGNMENT
D S2 S2 G2
TL
ORDERING INFORMATION
Device
NTQD6968N
NTQD6968NR2
NTQD6968NR2G
Package
TSSOP−8
TSSOP−8
TSSOP−8
(Pb−Free)
Shipping
†
100 Units / Rail
4000/Tape & Reel
4000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), t
≤
10 sec.
2. Mounted onto a 2″ square FR−4 Board
(1 in sq, 2 oz. Cu 0.06″ thick single sided), Steady State.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 3
Publication Order Number:
NTQD6968N/D
NTQD6968N
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Collector Current
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 25°C)
(V
DS
= 16 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
Gate−Body Leakage Current
(V
GS
=
±12
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(V
GS
= 4.5 Vdc, I
D
= 7.0 Adc)
(V
GS
= 2.5 Vdc, I
D
= 7.0 Adc)
(V
GS
= 2.5 Vdc, I
D
= 3.5 Adc)
Forward Transconductance (V
DS
= 10 Vdc, I
D
= 7.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 4 and 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 16 Vdc,
V
GS
= 4.5 Vdc,
I
D
= 7.0 Adc)
(V
DD
= 16 Vdc, I
D
= 7.0 Adc,
V
GS
= 4.5 Vdc, R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
Q
tot
Q
gs
Q
gd
−
−
−
−
−
−
−
8.0
25
60
65
12.5
1.0
5.0
−
−
−
−
17
−
−
nC
ns
(V
DS
= 16 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
630
260
95
−
−
−
pF
V
GS(th)
0.6
−
R
DS(on)
−
−
−
g
FS
−
0.017
0.022
0.022
19.2
0.022
0.030
0.030
−
Mhos
0.75
3.0
1.2
−
Vdc
mV/°C
W
V
(BR)DSS
20
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±100
nAdc
−
16
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
BODY−DRAIN DIODE RATINGS
(Note 4)
Forward On−Voltage
Reverse Recovery Time
(I
S
= 7.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
(I
S
= 7.0 Adc, V
GS
= 0 Vdc)
V
SD
t
rr
t
a
t
b
Q
RR
−
−
−
−
−
0.82
35
15
20
0.02
1.2
−
−
−
−
mC
Vdc
ns
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2
NTQD6968N
14
V
GS
= 10, 5, 3 and 2.2 V resp.
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
4
2
0
0
1.2 1.4 1.6 1.8
0.2 0.4 0.6 0.8
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
1.2 V
1.4 V
1.8 V
T
J
= 25°C
1.6 V
I
D
, DRAIN CURRENT (AMPS)
12
10
8
6
T
J
= 125°C
4
2
0
0
T
J
= 25°C
T
J
= −55°C
0.5
1
1.5
2
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2.5
14
V
DS
≥
10 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.03
I
D
= 7.0 A
T
J
= 25°C
0.02
0.04
T
J
= 25°C
0.035
0.03
0.025
V
GS
= 2.5 V
0.02
0.015
0.01
0.01
V
GS
= 4.5 V
2
4
6
8
10
12
14
0
0
2
4
6
8
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
I
D
= 3.5 A
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
1.5
10000
100000
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
V
GS
= 0 V
1
T
J
= 150°C
1000
T
J
= 125°C
0.5
0
−50
100
−25
0
25
50
75
100
125
150
0
4
8
12
16
20
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTQD6968N
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3000
2500
C, CAPACITANCE (pF)
2000
1500
1000
500
C
rss
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
5
Q
T
4
V
GS
3
2 Q
1
Q
2
C
iss
C
rss
0
10
5
V
GS
0
V
DS
5
10
15
C
oss
20
1
I
D
= 7.0 A
T
J
= 25°C
0
0
2.5
5
7.5
10
12.5
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 16 V
I
D
= 7.0 A
V
GS
= 4.5 V
t, TIME (ns)
100
t
f
t
d(off)
t
r
10
t
d(on)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.5
Figure 8. Gate−to−Source Voltage
versus Total Charge
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.525
0.55
0.575
0.6
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
10
T
C
= 25°C
100
ms
1 ms
10 ms
1
Figure 10. Diode Forward Voltage versus
Current
di/dt
I
S
t
rr
t
a
t
b
TIME
t
p
I
S
0.25 I
S
0.1
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
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4
NTQD6968N
10
R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single Pulse
0.0001
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
Figure 13. Thermal Response
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