MOSFET 60 / -50V 200mW
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | Diodes |
RoHS | No |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SOT-363-6 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 70 V, - 50 V |
Id - Continuous Drain Current | 115 mA |
Rds On - Drain-Source Resistance | 4.4 Ohms |
Vgs - Gate-Source Voltage | 20 V |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Dual |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
Forward Transconductance - Min | 0.08 S, 0.05 S |
高度 Height | 1 mm |
长度 Length | 2.2 mm |
Pd-功率耗散 Pd - Power Dissipation | 200 mW |
产品 Product | MOSFET Small Signal |
工厂包装数量 Factory Pack Quantity | 3000 |
Transistor Type | 1 N-Channel, 1 P-Channel |
类型 Type | FET |
Typical Turn-Off Delay Time | 11 ns, 18 ns |
Typical Turn-On Delay Time | 7 ns, 10 ns |
宽度 Width | 1.35 mm |
单位重量 Unit Weight | 0.000212 oz |
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