IRF6894MPbF
IRF6894MTRPbF
HEXFET
®
Power MOSFET plus Schottky Diode
RoHs
Compliant Containing No Lead and Bromide
Integrated
Monolithic Schottky Diode
Low
Profile (<0.7 mm)
Dual
Sided Cooling Compatible
Low
Package Inductance
Optimized
for High Frequency Switching
Ideal
for CPU Core DC-DC Converters
Optimized
for Sync. FET socket of Sync. Buck Converter
Low
Conduction and Switching Losses
Compatible
with existing Surface Mount Techniques
100%
Rg tested
Footprint
compatible to DirectFET
Applicable DirectFET
SQ
SX
™
Typical values (unless otherwise specified)
V
DSS
25V min
V
GS
±16V max
R
DS(on)
0.9m@ 10V
R
DS(on)
1.4m@ 4.5V
Q
g
tot
Q
gd
10nC
Q
gs2
3.0nC
Q
rr
58nC
Q
oss
33nC
V
gs(th)
1.6V
31nC
S
D
G
S
D
Outline and Substrate Outline (see p.7,8 for details)
ST
MQ
MX
MT
MP
DirectFET™ ISOMETRIC
MX
The IRF6894MPbF combines the latest HEXFET
®
Power MOSFET Silicon technology with the advanced DirectFET
™
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
™
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note
AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET
™
package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce
both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Description
Base part number
IRF6894MTRPbF
Package Type
DirectFET
®
Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6894MTRPbF
Max.
25
±16
37
29
163
296
540
30
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
4.0
Typical RDS(on) (m)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
VGS, Gate-to-Source Voltage (V)
A
mJ
A
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
QG Total Gate Charge (nC)
ID = 30A
VDS = 20V
VDS = 13V
VDS= 5V
ID = 37A
3.0
2.0
1.0
TJ = 25°C
0.0
2
4
6
8
10
12
14
16
18
20
TJ = 125°C
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET
™
Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH, R
G
= 50, I
AS
= 30A.
1
2016-10-13
IRF6894MTRPbF
Parameter
Min.
25
–––
–––
–––
1.1
–––
–––
–––
–––
193
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ. Max.
–––
0.02
0.9
1.4
1.6
-3.8
–––
–––
–––
–––
31
8.1
3.0
10
10
13
33
0.2
17
47
23
13
4232
1260
255
–––
–––
1.3
1.8
2.1
–––
500
100
-100
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
Conditions
V
GS
= 0V, I
D
= 1.0mA
I
D
= 10mA (25°C-125°C)
V
GS
= 10V, I
D
= 37A
V
GS
= 4.5V, I
D
= 30A
V
DS
= V
GS
, I
D
= 100µA
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
V
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2 +
Q
gd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
mV/°C V
DS
= V
GS
, I
D
= 10mA
µA V
DS
= 20 V, V
GS
= 0V
V
GS
= 16V
nA
V
GS
= -16V
S
V
DS
= 13V, I
D
= 30A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 30A
See Fig 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 30A
R
G
= 1.8
See Fig 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
nC
nC
ns
pF
Diode Characteristics
Typ. Max.
–––
–––
–––
28
58
37
A
296
0.75
42
87
V
ns
nC
Units
I
S
I
SM
V
SD
t
rr
Q
rr
D
G
S
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A
di/dt = 320A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
2016-10-13
IRF6894MTRPbF
Max.
2.8
1.8
54
270
-40 to + 150
Units
W
°C
Max.
45
–––
–––
2.3
–––
0.022
Units
Absolute Maximum Ratings
Symbol
Parameter
P
D
@T
A
= 25°C Power Dissipation
P
D
@T
A
= 70°C Power Dissipation
P
D
@T
C
= 25°C Power Dissipation
Peak Soldering Temperature
T
P
Operating Junction and
T
J
Storage Temperature Range
T
STG
Thermal Resistance
Symbol
Parameter
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Ambient
R
JA
Junction-to-Can
R
JC
Junction-to-PCB Mounted
R
JA-PCB
Linear Derating Factor
100
10
Thermal Response ( Z thJA )
Typ.
–––
12.5
20
–––
1.0
°C/W
W/°C
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum
Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
is measured at T
J
of approximately 90°C.
.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
3
2016-10-13
IRF6894MTRPbF
1000
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
10
TOP
2.5V
1
60µs
PULSE WIDTH
0.1
0.1
Tj = 25°C
1
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.5V
10
TOP
60µs
PULSE WIDTH
1
Tj = 150°C
0.1
100
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
10
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
1.6
ID = 37A
VGS = 10V
VGS = 4.5V
ID, Drain-to-Source Current(A)
100
TJ = -40°C
10
Typical R DS(on) (Normalized)
VDS = 15V
60µs
PULSE WIDTH
2.5
3.0
3.5
4.0
TJ = 150°C
TJ = 25°C
1.4
1.2
1.0
1
0.8
0.1
1.0
1.5
2.0
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
5.0
TJ = 25°C
4.0
Typical RDS (on) (m
)
C, Capacitance(pF)
10000
Coss
1000
Ciss
3.0
Vgs = 3.5V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 12V
Vgs = 15V
2.0
Crss
1.0
100
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
0.0
0
25
50
75
100 125 150 175 200
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
4
Fig 9.
Typical On-Resistance vs. Drain Current
and Gate Voltage
2016-10-13
ID, Drain Current (A)
1000
IRF6894MTRPbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
10
1
0.1
0.01
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
10msec
1msec
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
TA = 25°C
Tj = 150°C
Single Pulse
0.0
0.1
1.0
DC
1
0.1
0.4
0.7
1.0
VSD , Source-to-Drain Voltage (V)
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
180
160
140
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11.
Maximum Safe Operating Area
2.5
120
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
2500
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction Temperature
ID
TOP
2.0A
3.0A
BOTTOM 30A
2000
1500
1000
500
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
2016-10-13
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