Junction−to−Ambient – Steady State Minimum Pad (Note 4)
Symbol
R
qJA
R
qJA
R
qJA
Max
315
250
440
°C/W
Unit
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(ON)
R
DS(ON)
V
GS
= V
DS
, I
D
=
−250
mA
V
GS
=
−4.5V,
I
D
=
−260
mA
V
GS
=
−4.5V,
I
D
=
−10
mA
V
GS
=
−2.5
V, I
D
=
−1
mA
V
GS
=
−1.8
V, I
D
=
−1
mA
Forward Transconductance
CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, V
DD
=
−20
V,
dI
SD
/dt = 100 A/ms, I
S
=
−1.0
A
T
J
= 25°C
T
J
= 125°C
V
GS
=
−4.5
V, V
DD
=
−5
V, I
D
=
−100
mA,
R
G
= 6
W
V
GS
= 0 V, f = 1 MHz, V
DS
=
−10
V
15.3
4.3
2.3
8.4
15.3
37.5
22.7
0.69
0.56
37
15.9
21.1
20
80
30
50
70
nC
ns
16
28
80
43
−1.2
ns
pF
g
FS
V
DS
=
−5
V, I
D
=
−10
mA
−0.4
−2.0
2.9
2.7
4.1
6.1
73
4.0
3.4
5.3
10
mS
W
−1.3
V
mV/°C
W
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
=
−100
mA
I
D
=
−100
mA,
Reference to 25°C
V
GS
= 0 V,
V
DS
=
−16
V
T
J
= 25°C
T
J
= 125°C
−20
14
−1.0
−2.0
$1
V
mV/°C
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±5
V
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
V
GS
= 0 V, I
S
=
−10
mA
V
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTK3142P
TYPICAL PERFORMANCE CURVES
0.4
−I
D,
DRAIN CURRENT (AMPS)
T
J
= 25°C
V
GS
=
−4
V to
−10
V
−3.0
V
0.3
−2.5
V
−2.2
V
0.1
−2.0
V
−1.8
V
−1.6
V
−1.4
V
0
0.5
1
1.5
2
2.5
3
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
0.4
V
DS
≥
−5
V
0.3
T
J
= 25°C
0.2
0.2
0.1
T
J
= 150°C
0
1
T
J
=
−40°C
1.5
2.5
2
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3
0
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
9
8
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
8
9
10
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
9
8
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
I
D
=
−0.26
A
T
J
= 25°C
T
J
= 25°C
V
GS
=
−2.5
V
V
GS
=
−4.5
V
0.1
0.2
0.3
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
9.0
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
−50
−25
0
25
50
75
100
125
150
1
V
GS
=
−4.5
V
V
GS
=
−0.01
V
V
GS
=
−1.8
V
V
GS
=
−2.5
V
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
−I
DSS
, LEAKAGE (nA)
100
T
J
= 150°C
10
T
J
= 125°C
5
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTK3142P
TYPICAL PERFORMANCE CURVES
30
25
C, CAPACITANCE (pF)
20
15
10
C
oss
5
0
0
C
rss
2.5
5
7.5
10
12.5
15
17.5
−DRAIN−TO−SOURCE
VOLTAGE (V)
20
1
T
J
= 25°C
V
GS
= 0 V
1000
V
DD
=
−5
V
I
D
=
−10
mA
V
GS
=
−4.5
V
t, TIME (ns)
100
t
d(off)
t
f
10
t
d(on)
t
r
C
iss
1
10
R
G
, GATE RESISTANCE (OHMS)
100
Figure 7. Capacitance Variation
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
0.3
−I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 150°C
125°C
25°C
−40°C
0.2
0.1
0
0.4
0.6
0.8
0.9
1.0
0.5
0.7
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1.1
Figure 9. Diode Forward Voltage vs. Current
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4
NTK3142P
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE D
−X−
b1
D
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
DIM
A
b
b1
C
D
E
e
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.21
0.27
0.25
0.31
0.37
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.29 REF
0.15
0.20
0.25
A
−Y−
E
H
E
b
0.08 X Y
C
SIDE VIEW
1
2X
2
2X
e
TOP VIEW
3X
1
L
3X
L2
BOTTOM VIEW
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
RECOMMENDED
SOLDERING FOOTPRINT*
0.40
2X
PACKAGE
OUTLINE
2X
0.27
1.50
3X
0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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