a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
S15-0346-Rev. D, 23-Feb-15
Document Number: 66700
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
m
m
S
SYMBOL
V
DS
V
GS
LIMIT
20
±8
2.8
a
2.2
a
2
b
1.6
b
UNIT
V
I
D
A
I
DM
I
S
15
0.7
a
0.4
b
0.9
a
0.6
a
0.5
b
0.3
b
-55 to +150
260
P
D
W
T
J
, T
stg
°C
SYMBOL
t
≤
5s
R
thJA
TYPICAL
105
200
MAXIMUM
135
260
UNIT
°C/W
Si8800EDB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 1 A
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
SYMBOL
TEST CONDITIONS
MIN.
20
-
-
0.4
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
18
-2.3
-
-
-
-
-
-
0.066
0.072
0.082
0.095
10
5.5
3.2
0.42
0.5
1
65
85
900
350
25
40
1100
350
-
-
1
13
5
8
5
MAX.
-
-
-
1
± 0.5
±6
1
10
-
0.080
0.090
0.105
0.150
-
8.3
5
-
-
-
130
170
1800
700
50
80
2200
700
0.7
15
1.5
25
10
-
-
UNIT
V
mV/°C
V
μA
A
Ω
g
fs
V
DS
= 10 V, I
D
= 1 A
V
DS
= 10 V, V
GS
= 8 V, I
D
= 1 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 1 A
f = 1 MHz
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 1
Ω
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
nC
kΩ
ns
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 8 V, R
g
= 1
Ω
-
-
-
T
C
= 25 °C
I
S
= 1 A, V
GS
= 0 V
-
-
-
-
-
-
-
A
V
ns
nC
ns
I
F
= 1 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0346-Rev. D, 23-Feb-15
Document Number: 66700
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8800EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
10
-1
Vishay Siliconix
I
GSS
-
Gate
Current (mA)
1.2
T
J
= 25 °C
0.9
I
GSS
-
Gate
Current (A)
10
-3
10
-5
T
J
= 150 °C
10
-7
T
J
= 25 °C
0.6
0.3
10
-9
0.0
0
3
6
9
12
15
V
GS
-
Gate-to-Source
Voltage (V)
10
-11
0
3
6
9
12
V
GS
-
Gate-to-Source
Voltage (V)
15
Gate Current vs. Gate-Source Voltage
15
V
GS
= 5 V thru 2 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
Gate Current vs. Gate-Source Voltage
9
V
GS
= 1.5 V
3
6
2
T
C
= 25 °C
1
T
C
= 125 °C
3
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.15
8
I
D
= 1 A
R
DS(on)
- On-Resistance (Ω)
0.12
V
GS
= 1.5 V
0.09
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
-
Gate-to-Source
Voltage (V)
6
Transfer Characteristics
V
DS
= 5 V
V
DS
= 10 V
4
0.06
V
GS
= 4.5 V
0.03
V
DS
= 16 V
2
0.00
0
3
6
9
12
15
I
D
- Drain Current (A)
0
0
1
2
3
4
5
6
Q
g
- Total
Gate
Charge (nC)
On-Resistance vs. Drain Current
S15-0346-Rev. D, 23-Feb-15
Gate Charge
Document Number: 66700
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8800EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.5
R
DS(on)
- On-Resistance (Normalized)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0.1
0.0
V
GS
= 1.5 V; I
D
= 0.5 A
V
GS
= 4.5 V, V
GS
= 2.5 V, V
GS
= 1.8 V; I
D
= 1 A
10
Vishay Siliconix
I
S
-
Source
Current (A)
T
J
= 150 °C
T
J
= 25 °C
1
- 25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.14
0.8
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.12
I
D
= 1.5 A; T
J
= 125 °C
V
GS(th)
(V)
0.10
0.7
0.6
I
D
= 250 μA
0.5
0.08
I
D
= 1.5 A; T
J
= 25 °C
0.06
I
D
= 0.5 A; T
J
= 125 °C
0.4
I
D
= 0.5 A; T
J
= 25 °C
0.3
0.04
0
1
2
3
4
5
V
GS
-
Gate-to-Source
Voltage (V)
0.2
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
14
12
10
Power (W)
8
6
4
2
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
S15-0346-Rev. D, 23-Feb-15
Document Number: 66700
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8800EDB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
Limited by R
DS(on)
*
I
D
- Drain Current (A)
10
100 μs
1
1 ms
Vishay Siliconix
0.1
T
A
= 25 °C
Single
Pulse
BVDSS Limited
10 ms
100 ms, 1
s
10
s,
DC
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
3.0
0.8
2.5
Power Dissipation (W)
0
25
50
75
100
125
150
0.6
I
D
- Drain Current (A)
2.0
1.5
0.4
1.0
0.2
0.5
0.0
T
A
- Ambient Temperature (°C)
0.0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
Power Derating
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. D, 23-Feb-15
Document Number: 66700
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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