BC846...-BC850...
NPN Silicon AF Transistors
•
For AF input stages and driver applications
•
High current gain
•
Low collector-emitter saturation voltage
•
Low noise between 30 Hz and 15 kHz
•
Complementary types:
BC856...-BC860...(PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
1
Pb-containing
package may be available upon special request
1
2007-04-20
BC846...-BC850...
Type
BC846A
BC846B
BC846BW
BC847A
BC847B
BC847BF
BC847BL3
BC847BT
BC847BW
BC847C
BC847CW
BC848A
BC848AW
BC848B
BC848BF
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849BF
BC849C
BC849CW
BC850B
BF850BF
BC850BW
BC850C
BC850CW
Marking
1As
1Bs
1Bs
1Es
1Fs
1Fs
1F
1F
1Fs
1Gs
1Gs
1Js
1Js
1Ks
1Ks
1K
1Ks
1Ls
1Ls
2Bs
2Bs
2Cs
2Cs
2Fs
2Fs
2Fs
2Gs
2Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
SOT323
SOT23
SOT23
TSFP-3
TSLP-3-1
SC75
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
TSFP-3
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
TSFP-3
SOT23
SOT323
SOT23
TSFP-3
SOT323
SOT23
SOT323
2
2007-04-20
BC846...-BC850...
Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current
Total power dissipation-
T
S
≤
71 °C, BC846-BC850
T
S
≤
128 °C, BC847F-BC850F
T
S
≤
135 °C, BC847L3-BC848L3
T
S
≤
109 °C, BC847T
T
S
≤
124 °C, BC846W-BC850W
Junction temperature
Storage temperature
T
j
T
stg
I
C
I
CM
P
tot
330
250
250
250
250
150
-65 ... 150
°C
V
EBO
6
6
6
100
200
mW
mA
V
CBO
80
50
30
V
CES
80
50
30
Symbol
V
CEO
65
45
30
Value
Unit
V
3
2007-04-20
BC846...-BC850...
Thermal Resistance
Parameter
Junction - soldering point
1)
BC846-BC850
BC847F-BC850F
BC847L3-BC848L3
BC847T
BC846W-BC850W
1
For
Symbol
R
thJS
Value
≤
240
≤
90
≤
60
≤
165
≤
105
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
4
2007-04-20
BC846...-BC850...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V
(BR)CEO
V
I
C
= 10 mA,
I
B
= 0 , BC846...
I
C
= 10 mA,
I
B
= 0 , BC847..., BC850...
I
C
= 10 mA,
I
B
= 0 , BC848..., BC849...
65
45
30
V
(BR)CBO
-
-
-
-
-
-
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0 , BC846...
I
C
= 10 µA,
I
E
= 0 , BC847..., BC850...
I
C
= 10 µA,
I
E
= 0 , BC848..., BC849...
80
50
30
V
(BR)EBO
I
CBO
-
-
-
6
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 0 ,
I
C
= 10 µA
-
Collector-base cutoff current
V
CB
= 45 V,
I
E
= 0
V
CB
= 30 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
h
FE
0.015
5
140
250
480
180
290
520
-
-
-
-
-
-
220
450
800
mV
DC current gain
1)
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 10 µA,
V
CE
= 5 V,
h
FE
-grp.C
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.A
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.B
I
C
= 2 mA,
V
CE
= 5 V,
h
FE
-grp.C
-
-
-
110
200
420
V
CEsat
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BEsat
90
200
700
900
660
-
250
600
-
-
700
770
Base emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
I
C
= 100 mA,
I
B
= 5 mA
-
-
V
BE(ON)
Base-emitter voltage
1)
I
C
= 2 mA,
V
CE
= 5 V
I
C
= 10 mA,
V
CE
= 5 V
1
Pulse test: t < 300µs; D < 2%
580
-
5
2007-04-20
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